JPS5799743A - Apparatus and method of plasma etching - Google Patents
Apparatus and method of plasma etchingInfo
- Publication number
- JPS5799743A JPS5799743A JP17554980A JP17554980A JPS5799743A JP S5799743 A JPS5799743 A JP S5799743A JP 17554980 A JP17554980 A JP 17554980A JP 17554980 A JP17554980 A JP 17554980A JP S5799743 A JPS5799743 A JP S5799743A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- etching
- cathode
- vacuum
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To achieve a high-accuracy working under a relatively high vacuum using a plasma etching apparatus by a method wherein a No.1 cathode and a No.2 cathode which is a plate with through-holes are disposed facing to each other with vertical arrangement in a cylindrical anode, and a magnetic field is generated between both cathodes to etch a specimen held under the No.2 cathode. CONSTITUTION:Inside a quartz, for example, tube 1, a pair of parallel electrodes 2 and 3 and a stainless cylindrical electrode 4 are arranged to form a main discharging region (shaded part). An electrode 3 is of a ring shape or is a plate with many through-holes. A specimen 8 is held on a holder 5 installed outside the main discharging region facing the electrode 3. For example, in etching a silicon substrate with a resist mask, electrodes 2 and 3 are grounded, the electrode 4 is, for example, at 600V, and a magnetic flux of 450 Gauss, is generated with a coil 6. Introducing CF4 gas into the tube, plasma etching is implemented at the vacuum of 10<-2>torr. By applying an external magnetic field in such a way, discharge at a high-vacuum area is feasible. Further, since etching by ions is also effective, an almost vertical etching characteristic can be obtained, so a minute pattern can be achieved in a high accuracy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17554980A JPS5799743A (en) | 1980-12-11 | 1980-12-11 | Apparatus and method of plasma etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17554980A JPS5799743A (en) | 1980-12-11 | 1980-12-11 | Apparatus and method of plasma etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5799743A true JPS5799743A (en) | 1982-06-21 |
Family
ID=15998016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17554980A Pending JPS5799743A (en) | 1980-12-11 | 1980-12-11 | Apparatus and method of plasma etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5799743A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61203544U (en) * | 1985-06-12 | 1986-12-22 | ||
US5164034A (en) * | 1989-09-08 | 1992-11-17 | Tokyo Electron Limited | Apparatus and method for processing substrate |
-
1980
- 1980-12-11 JP JP17554980A patent/JPS5799743A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61203544U (en) * | 1985-06-12 | 1986-12-22 | ||
JPH0517880Y2 (en) * | 1985-06-12 | 1993-05-13 | ||
US5164034A (en) * | 1989-09-08 | 1992-11-17 | Tokyo Electron Limited | Apparatus and method for processing substrate |
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