JPS56105480A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS56105480A
JPS56105480A JP818080A JP818080A JPS56105480A JP S56105480 A JPS56105480 A JP S56105480A JP 818080 A JP818080 A JP 818080A JP 818080 A JP818080 A JP 818080A JP S56105480 A JPS56105480 A JP S56105480A
Authority
JP
Japan
Prior art keywords
film
chamber
etched
reactive
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP818080A
Other languages
Japanese (ja)
Inventor
Masao Nagatomo
Kazuo Mizuguchi
Haruhiko Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP818080A priority Critical patent/JPS56105480A/en
Publication of JPS56105480A publication Critical patent/JPS56105480A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To drastically enhance the uniformity of etching to a film to be etched with a very simple means by projecting ultraviolet ray to a semiconductor substrate containing a film to be etched and a reactive plasma gas.
CONSTITUTION: A silica chamber 3 containing a semiconductor substrate 1 having a film 2 to be etched is exhausted 4 to the specified vacuum. Then, a reactive gas is introduced 5 into the chamber 3, the specified voltage is applied from a high-frequency power supply 8 to the external electrode 6 and the internal screen electrode to form plasma of the reactive gas. A ultraviolet lamp 9 installed at the inside and outside of the chamber 3 are used to project ultraviolet ray on reactive plasma gas and the film 2 containing substrate 1 in the chamber 3. This drastically increases the activation energy of reactive gas and enables a high-speed etching application to an Al film or Si oxide film for which the application of plasma etching is heretofore impossible.
COPYRIGHT: (C)1981,JPO&Japio
JP818080A 1980-01-25 1980-01-25 Plasma etching method Pending JPS56105480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP818080A JPS56105480A (en) 1980-01-25 1980-01-25 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP818080A JPS56105480A (en) 1980-01-25 1980-01-25 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS56105480A true JPS56105480A (en) 1981-08-21

Family

ID=11686105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP818080A Pending JPS56105480A (en) 1980-01-25 1980-01-25 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS56105480A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852827A (en) * 1981-09-25 1983-03-29 Hitachi Ltd Dry etching and device thereof
JPS59104120A (en) * 1982-12-07 1984-06-15 Fujitsu Ltd Plasma treatment
JPS59129770A (en) * 1983-01-18 1984-07-26 Ushio Inc Photochemical vapor deposition device
JPS59215728A (en) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd Optical cleaning method of surface of semiconductor
JPS6048237U (en) * 1983-09-09 1985-04-04 ウシオ電機株式会社 UV cleaning equipment
JPS6048236U (en) * 1983-09-09 1985-04-04 ウシオ電機株式会社 Opening/closing door of ultraviolet cleaning equipment
JPS6127635A (en) * 1984-07-17 1986-02-07 Samuko Internatl Kenkyusho:Kk High efficiency dry type removing device of photoresist
JPS61154038A (en) * 1984-12-26 1986-07-12 Plasma Syst:Kk Dry ashing apparatus
JPS62115723A (en) * 1985-11-15 1987-05-27 Nec Corp Semiconductor manufacturing equipment
EP1041615A2 (en) * 1999-03-30 2000-10-04 Applied Materials, Inc. Method for enhancing plasma processing performance by irradiating with light

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852827A (en) * 1981-09-25 1983-03-29 Hitachi Ltd Dry etching and device thereof
JPH0429220B2 (en) * 1981-09-25 1992-05-18
JPS59104120A (en) * 1982-12-07 1984-06-15 Fujitsu Ltd Plasma treatment
JPS6150149B2 (en) * 1983-01-18 1986-11-01 Ushio Electric Inc
JPS59129770A (en) * 1983-01-18 1984-07-26 Ushio Inc Photochemical vapor deposition device
JPS59215728A (en) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd Optical cleaning method of surface of semiconductor
JPS6048237U (en) * 1983-09-09 1985-04-04 ウシオ電機株式会社 UV cleaning equipment
JPS6048236U (en) * 1983-09-09 1985-04-04 ウシオ電機株式会社 Opening/closing door of ultraviolet cleaning equipment
JPS6127635A (en) * 1984-07-17 1986-02-07 Samuko Internatl Kenkyusho:Kk High efficiency dry type removing device of photoresist
JPS61154038A (en) * 1984-12-26 1986-07-12 Plasma Syst:Kk Dry ashing apparatus
JPS62115723A (en) * 1985-11-15 1987-05-27 Nec Corp Semiconductor manufacturing equipment
EP1041615A2 (en) * 1999-03-30 2000-10-04 Applied Materials, Inc. Method for enhancing plasma processing performance by irradiating with light
EP1041615A3 (en) * 1999-03-30 2001-04-04 Applied Materials, Inc. Method for enhancing plasma processing performance by irradiating with light
US6569775B1 (en) 1999-03-30 2003-05-27 Applied Materials, Inc. Method for enhancing plasma processing performance

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