JPS56105480A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS56105480A JPS56105480A JP818080A JP818080A JPS56105480A JP S56105480 A JPS56105480 A JP S56105480A JP 818080 A JP818080 A JP 818080A JP 818080 A JP818080 A JP 818080A JP S56105480 A JPS56105480 A JP S56105480A
- Authority
- JP
- Japan
- Prior art keywords
- film
- chamber
- etched
- reactive
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To drastically enhance the uniformity of etching to a film to be etched with a very simple means by projecting ultraviolet ray to a semiconductor substrate containing a film to be etched and a reactive plasma gas.
CONSTITUTION: A silica chamber 3 containing a semiconductor substrate 1 having a film 2 to be etched is exhausted 4 to the specified vacuum. Then, a reactive gas is introduced 5 into the chamber 3, the specified voltage is applied from a high-frequency power supply 8 to the external electrode 6 and the internal screen electrode to form plasma of the reactive gas. A ultraviolet lamp 9 installed at the inside and outside of the chamber 3 are used to project ultraviolet ray on reactive plasma gas and the film 2 containing substrate 1 in the chamber 3. This drastically increases the activation energy of reactive gas and enables a high-speed etching application to an Al film or Si oxide film for which the application of plasma etching is heretofore impossible.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP818080A JPS56105480A (en) | 1980-01-25 | 1980-01-25 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP818080A JPS56105480A (en) | 1980-01-25 | 1980-01-25 | Plasma etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56105480A true JPS56105480A (en) | 1981-08-21 |
Family
ID=11686105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP818080A Pending JPS56105480A (en) | 1980-01-25 | 1980-01-25 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56105480A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5852827A (en) * | 1981-09-25 | 1983-03-29 | Hitachi Ltd | Dry etching and device thereof |
JPS59104120A (en) * | 1982-12-07 | 1984-06-15 | Fujitsu Ltd | Plasma treatment |
JPS59129770A (en) * | 1983-01-18 | 1984-07-26 | Ushio Inc | Photochemical vapor deposition device |
JPS59215728A (en) * | 1983-05-24 | 1984-12-05 | Semiconductor Energy Lab Co Ltd | Optical cleaning method of surface of semiconductor |
JPS6048237U (en) * | 1983-09-09 | 1985-04-04 | ウシオ電機株式会社 | UV cleaning equipment |
JPS6048236U (en) * | 1983-09-09 | 1985-04-04 | ウシオ電機株式会社 | Opening/closing door of ultraviolet cleaning equipment |
JPS6127635A (en) * | 1984-07-17 | 1986-02-07 | Samuko Internatl Kenkyusho:Kk | High efficiency dry type removing device of photoresist |
JPS61154038A (en) * | 1984-12-26 | 1986-07-12 | Plasma Syst:Kk | Dry ashing apparatus |
JPS62115723A (en) * | 1985-11-15 | 1987-05-27 | Nec Corp | Semiconductor manufacturing equipment |
EP1041615A2 (en) * | 1999-03-30 | 2000-10-04 | Applied Materials, Inc. | Method for enhancing plasma processing performance by irradiating with light |
-
1980
- 1980-01-25 JP JP818080A patent/JPS56105480A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5852827A (en) * | 1981-09-25 | 1983-03-29 | Hitachi Ltd | Dry etching and device thereof |
JPH0429220B2 (en) * | 1981-09-25 | 1992-05-18 | ||
JPS59104120A (en) * | 1982-12-07 | 1984-06-15 | Fujitsu Ltd | Plasma treatment |
JPS6150149B2 (en) * | 1983-01-18 | 1986-11-01 | Ushio Electric Inc | |
JPS59129770A (en) * | 1983-01-18 | 1984-07-26 | Ushio Inc | Photochemical vapor deposition device |
JPS59215728A (en) * | 1983-05-24 | 1984-12-05 | Semiconductor Energy Lab Co Ltd | Optical cleaning method of surface of semiconductor |
JPS6048237U (en) * | 1983-09-09 | 1985-04-04 | ウシオ電機株式会社 | UV cleaning equipment |
JPS6048236U (en) * | 1983-09-09 | 1985-04-04 | ウシオ電機株式会社 | Opening/closing door of ultraviolet cleaning equipment |
JPS6127635A (en) * | 1984-07-17 | 1986-02-07 | Samuko Internatl Kenkyusho:Kk | High efficiency dry type removing device of photoresist |
JPS61154038A (en) * | 1984-12-26 | 1986-07-12 | Plasma Syst:Kk | Dry ashing apparatus |
JPS62115723A (en) * | 1985-11-15 | 1987-05-27 | Nec Corp | Semiconductor manufacturing equipment |
EP1041615A2 (en) * | 1999-03-30 | 2000-10-04 | Applied Materials, Inc. | Method for enhancing plasma processing performance by irradiating with light |
EP1041615A3 (en) * | 1999-03-30 | 2001-04-04 | Applied Materials, Inc. | Method for enhancing plasma processing performance by irradiating with light |
US6569775B1 (en) | 1999-03-30 | 2003-05-27 | Applied Materials, Inc. | Method for enhancing plasma processing performance |
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