JPS5799744A - Apparatus and method of plasma etching - Google Patents

Abstract

PURPOSE:To achieve discharging at a high-vacuum region to improve a working accuracy of a minute pattern using plasma etching by a method wherein a cylindrical anode and a cathode with a specimen holder close to the anode are installed in a reaction chamber, and a magnetic field is generated in the anode to perform etching. CONSTITUTION:A pair of parallel electrodes (cathodes) 2 and 3 and a cylindrical anode 4 are installed in a reaction chamber made of a quartz tube 1, and a magnet 5 is installed outside the chamber to generate a magnetic field. On the cathode 2, a specimen 7 to be etched is held. While generating an external magnetic field by applying a voltage between electrodes, a halogenide compound gas is introduced into the evacuated chamber, and discharging is made to etch the specimen 7. Cathodes 2 and 3 are grounded, and a D.C. voltage is applied to the anode. The cathode 2 supporting a specimen can be placed at a positive potential, and also an alternating current can be superposed between cathodes. Because a dissociation of plasma is increased with the presence of a magnetic field, discharge can be achieved at a vacuum of the order of 10<-2>torr or less, and a working accuracy can be improved by the contribution of ions etching.