JPS5799744A - Apparatus and method of plasma etching - Google Patents
Apparatus and method of plasma etchingInfo
- Publication number
- JPS5799744A JPS5799744A JP17556180A JP17556180A JPS5799744A JP S5799744 A JPS5799744 A JP S5799744A JP 17556180 A JP17556180 A JP 17556180A JP 17556180 A JP17556180 A JP 17556180A JP S5799744 A JPS5799744 A JP S5799744A
- Authority
- JP
- Japan
- Prior art keywords
- anode
- magnetic field
- specimen
- cathodes
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To achieve discharging at a high-vacuum region to improve a working accuracy of a minute pattern using plasma etching by a method wherein a cylindrical anode and a cathode with a specimen holder close to the anode are installed in a reaction chamber, and a magnetic field is generated in the anode to perform etching. CONSTITUTION:A pair of parallel electrodes (cathodes) 2 and 3 and a cylindrical anode 4 are installed in a reaction chamber made of a quartz tube 1, and a magnet 5 is installed outside the chamber to generate a magnetic field. On the cathode 2, a specimen 7 to be etched is held. While generating an external magnetic field by applying a voltage between electrodes, a halogenide compound gas is introduced into the evacuated chamber, and discharging is made to etch the specimen 7. Cathodes 2 and 3 are grounded, and a D.C. voltage is applied to the anode. The cathode 2 supporting a specimen can be placed at a positive potential, and also an alternating current can be superposed between cathodes. Because a dissociation of plasma is increased with the presence of a magnetic field, discharge can be achieved at a vacuum of the order of 10<-2>torr or less, and a working accuracy can be improved by the contribution of ions etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17556180A JPS5799744A (en) | 1980-12-11 | 1980-12-11 | Apparatus and method of plasma etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17556180A JPS5799744A (en) | 1980-12-11 | 1980-12-11 | Apparatus and method of plasma etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5799744A true JPS5799744A (en) | 1982-06-21 |
Family
ID=15998227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17556180A Pending JPS5799744A (en) | 1980-12-11 | 1980-12-11 | Apparatus and method of plasma etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5799744A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4559100A (en) * | 1983-12-23 | 1985-12-17 | Hitachi, Ltd. | Microwave plasma etching apparatus |
JPS61226925A (en) * | 1985-04-01 | 1986-10-08 | Anelva Corp | Discharge reaction device |
US4623417A (en) * | 1985-08-23 | 1986-11-18 | Texas Instruments Incorporated | Magnetron plasma reactor |
-
1980
- 1980-12-11 JP JP17556180A patent/JPS5799744A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4559100A (en) * | 1983-12-23 | 1985-12-17 | Hitachi, Ltd. | Microwave plasma etching apparatus |
JPS61226925A (en) * | 1985-04-01 | 1986-10-08 | Anelva Corp | Discharge reaction device |
US4623417A (en) * | 1985-08-23 | 1986-11-18 | Texas Instruments Incorporated | Magnetron plasma reactor |
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