JPS5477573A - Operating method of plasma treating apparatus - Google Patents
Operating method of plasma treating apparatusInfo
- Publication number
- JPS5477573A JPS5477573A JP13509177A JP13509177A JPS5477573A JP S5477573 A JPS5477573 A JP S5477573A JP 13509177 A JP13509177 A JP 13509177A JP 13509177 A JP13509177 A JP 13509177A JP S5477573 A JPS5477573 A JP S5477573A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- less
- action
- neglible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To remove adsorption gas in a treating chamber by placing wafers in the treatment chamber, introducing an active gas therein and generating plasma under substantially neglible conditions.
CONSTITUTION: The pressure in a bell-jar 2 is made lower (less than 100 torr) than that at the plasma etching (above 300 m torr), the volume of active gas also less than about 1/3 to 1/10 and power less than about 1/3 to 1/10. Then, plsama spreads also to the outside of discharge space 10 and drives out the gas having been absorbed on the wall surface of the bell-jar. This gas is exhausted 11 to the outside of the apparatus. Hence, the active gas is maintained in the condition where etching action is neglible or there is no etching action and therefore no substantial action is given to wafers 4 and only the adsorption gas is exhaused. If plasma etching is performed after this, etching may be done with good reproduoibility
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13509177A JPS5477573A (en) | 1977-11-10 | 1977-11-10 | Operating method of plasma treating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13509177A JPS5477573A (en) | 1977-11-10 | 1977-11-10 | Operating method of plasma treating apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5477573A true JPS5477573A (en) | 1979-06-21 |
| JPS6214936B2 JPS6214936B2 (en) | 1987-04-04 |
Family
ID=15143617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13509177A Granted JPS5477573A (en) | 1977-11-10 | 1977-11-10 | Operating method of plasma treating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5477573A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727024A (en) * | 1980-07-25 | 1982-02-13 | Mitsubishi Electric Corp | Washing of reactor for plasma cvd method |
| JPS63129630A (en) * | 1986-11-20 | 1988-06-02 | Fuji Electric Co Ltd | Thin-film formation using plasma cvd |
| JPH01102921A (en) * | 1987-10-16 | 1989-04-20 | Semiconductor Energy Lab Co Ltd | Manufacture of film |
| JP2007294279A (en) * | 2006-04-26 | 2007-11-08 | Matsushita Electric Ind Co Ltd | Plasma treatment device, and plasma treatment method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117071A (en) * | 1976-03-29 | 1977-10-01 | Hitachi Ltd | Self-cleaning type preparation of semiconductor |
-
1977
- 1977-11-10 JP JP13509177A patent/JPS5477573A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117071A (en) * | 1976-03-29 | 1977-10-01 | Hitachi Ltd | Self-cleaning type preparation of semiconductor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727024A (en) * | 1980-07-25 | 1982-02-13 | Mitsubishi Electric Corp | Washing of reactor for plasma cvd method |
| JPS5944770B2 (en) * | 1980-07-25 | 1984-11-01 | 三菱電機株式会社 | Cleaning method for plasma CVD reactor |
| JPS63129630A (en) * | 1986-11-20 | 1988-06-02 | Fuji Electric Co Ltd | Thin-film formation using plasma cvd |
| JPH01102921A (en) * | 1987-10-16 | 1989-04-20 | Semiconductor Energy Lab Co Ltd | Manufacture of film |
| JP2007294279A (en) * | 2006-04-26 | 2007-11-08 | Matsushita Electric Ind Co Ltd | Plasma treatment device, and plasma treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6214936B2 (en) | 1987-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5747876A (en) | Plasma etching apparatus and method | |
| JPS5329076A (en) | Plasma treating apparatus of semiconductor substrates | |
| JPS5751265A (en) | Microwave plasma etching device | |
| JPS56158873A (en) | Dry etching method | |
| JPS57131374A (en) | Plasma etching device | |
| JPS5531154A (en) | Plasma etching apparatus | |
| JPS56105483A (en) | Dry etching device | |
| JPS56155526A (en) | Method of forming film | |
| JPS56123377A (en) | Plasma cleaning and etching method | |
| JPS5477573A (en) | Operating method of plasma treating apparatus | |
| JPS53112065A (en) | Removing method of high molecular compound | |
| JPS56105480A (en) | Plasma etching method | |
| JPS5587438A (en) | Manufacture of semiconductor device | |
| JPS5298475A (en) | Plasma treating apparatus | |
| JPS57200569A (en) | Apparatus for treating surface with gas decomposed by light | |
| JPS57131373A (en) | Plasma etching device | |
| JPS53146939A (en) | Etching method for aluminum | |
| JPS5669382A (en) | Surface treatment by plasma | |
| JPS572585A (en) | Forming method for aluminum electrode | |
| GB2008464A (en) | Improvements in methods of operating and treating evacuated chambers | |
| JPS5524941A (en) | Dry etching apparatus | |
| JPS5710629A (en) | Plasma treatment of hollow body | |
| JPS5625972A (en) | Etching treatment by plasma | |
| JPS57159537A (en) | Method and apparatus for ion nitriding treatment | |
| JPS5511167A (en) | Dry etching method |