JPS5477573A - Operating method of plasma treating apparatus - Google Patents

Operating method of plasma treating apparatus

Info

Publication number
JPS5477573A
JPS5477573A JP13509177A JP13509177A JPS5477573A JP S5477573 A JPS5477573 A JP S5477573A JP 13509177 A JP13509177 A JP 13509177A JP 13509177 A JP13509177 A JP 13509177A JP S5477573 A JPS5477573 A JP S5477573A
Authority
JP
Japan
Prior art keywords
gas
etching
less
action
neglible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13509177A
Other languages
Japanese (ja)
Other versions
JPS6214936B2 (en
Inventor
Tadayoshi Mifune
Yasuaki Nakane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13509177A priority Critical patent/JPS5477573A/en
Publication of JPS5477573A publication Critical patent/JPS5477573A/en
Publication of JPS6214936B2 publication Critical patent/JPS6214936B2/ja
Granted legal-status Critical Current

Links

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To remove adsorption gas in a treating chamber by placing wafers in the treatment chamber, introducing an active gas therein and generating plasma under substantially neglible conditions.
CONSTITUTION: The pressure in a bell-jar 2 is made lower (less than 100 torr) than that at the plasma etching (above 300 m torr), the volume of active gas also less than about 1/3 to 1/10 and power less than about 1/3 to 1/10. Then, plsama spreads also to the outside of discharge space 10 and drives out the gas having been absorbed on the wall surface of the bell-jar. This gas is exhausted 11 to the outside of the apparatus. Hence, the active gas is maintained in the condition where etching action is neglible or there is no etching action and therefore no substantial action is given to wafers 4 and only the adsorption gas is exhaused. If plasma etching is performed after this, etching may be done with good reproduoibility
COPYRIGHT: (C)1979,JPO&Japio
JP13509177A 1977-11-10 1977-11-10 Operating method of plasma treating apparatus Granted JPS5477573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13509177A JPS5477573A (en) 1977-11-10 1977-11-10 Operating method of plasma treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13509177A JPS5477573A (en) 1977-11-10 1977-11-10 Operating method of plasma treating apparatus

Publications (2)

Publication Number Publication Date
JPS5477573A true JPS5477573A (en) 1979-06-21
JPS6214936B2 JPS6214936B2 (en) 1987-04-04

Family

ID=15143617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13509177A Granted JPS5477573A (en) 1977-11-10 1977-11-10 Operating method of plasma treating apparatus

Country Status (1)

Country Link
JP (1) JPS5477573A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727024A (en) * 1980-07-25 1982-02-13 Mitsubishi Electric Corp Washing of reactor for plasma cvd method
JPS63129630A (en) * 1986-11-20 1988-06-02 Fuji Electric Co Ltd Thin-film formation using plasma cvd
JPH01102921A (en) * 1987-10-16 1989-04-20 Semiconductor Energy Lab Co Ltd Manufacture of film
JP2007294279A (en) * 2006-04-26 2007-11-08 Matsushita Electric Ind Co Ltd Plasma treatment device, and plasma treatment method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117071A (en) * 1976-03-29 1977-10-01 Hitachi Ltd Self-cleaning type preparation of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117071A (en) * 1976-03-29 1977-10-01 Hitachi Ltd Self-cleaning type preparation of semiconductor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727024A (en) * 1980-07-25 1982-02-13 Mitsubishi Electric Corp Washing of reactor for plasma cvd method
JPS5944770B2 (en) * 1980-07-25 1984-11-01 三菱電機株式会社 Cleaning method for plasma CVD reactor
JPS63129630A (en) * 1986-11-20 1988-06-02 Fuji Electric Co Ltd Thin-film formation using plasma cvd
JPH01102921A (en) * 1987-10-16 1989-04-20 Semiconductor Energy Lab Co Ltd Manufacture of film
JP2007294279A (en) * 2006-04-26 2007-11-08 Matsushita Electric Ind Co Ltd Plasma treatment device, and plasma treatment method

Also Published As

Publication number Publication date
JPS6214936B2 (en) 1987-04-04

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