GB2008464A - Improvements in methods of operating and treating evacuated chambers - Google Patents
Improvements in methods of operating and treating evacuated chambersInfo
- Publication number
- GB2008464A GB2008464A GB7845857A GB7845857A GB2008464A GB 2008464 A GB2008464 A GB 2008464A GB 7845857 A GB7845857 A GB 7845857A GB 7845857 A GB7845857 A GB 7845857A GB 2008464 A GB2008464 A GB 2008464A
- Authority
- GB
- United Kingdom
- Prior art keywords
- treating
- operating
- methods
- gas plasma
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
Abstract
Workpieces, such as silicon wafers 20, are treated with a halogen etching gas in a vacuum chamber 10 in order to etch through a masking layer 21 on the wafers 20. Hydrogen is then introduced into the chamber 10 and a hydrogen gas plasma is generated, which reacts with residual halogen in the chamber. Finally, an oxygen gas plasma is generated to remove the etch resist layer 22. Due to the absence of residual halogen, no undesirable by products are formed when the oxygen gas plasma is introduced. <IMAGE>
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7845857A GB2008464A (en) | 1977-11-29 | 1978-11-23 | Improvements in methods of operating and treating evacuated chambers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4951177 | 1977-11-29 | ||
GB7845857A GB2008464A (en) | 1977-11-29 | 1978-11-23 | Improvements in methods of operating and treating evacuated chambers |
Publications (1)
Publication Number | Publication Date |
---|---|
GB2008464A true GB2008464A (en) | 1979-06-06 |
Family
ID=26266500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7845857A Withdrawn GB2008464A (en) | 1977-11-29 | 1978-11-23 | Improvements in methods of operating and treating evacuated chambers |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2008464A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5545289A (en) * | 1994-02-03 | 1996-08-13 | Applied Materials, Inc. | Passivating, stripping and corrosion inhibition of semiconductor substrates |
US6440864B1 (en) | 2000-06-30 | 2002-08-27 | Applied Materials Inc. | Substrate cleaning process |
US6692903B2 (en) | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
-
1978
- 1978-11-23 GB GB7845857A patent/GB2008464A/en not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5545289A (en) * | 1994-02-03 | 1996-08-13 | Applied Materials, Inc. | Passivating, stripping and corrosion inhibition of semiconductor substrates |
US6440864B1 (en) | 2000-06-30 | 2002-08-27 | Applied Materials Inc. | Substrate cleaning process |
US6692903B2 (en) | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR890004407A (en) | Resist Mask Peeling Method | |
JPS5749234A (en) | Plasma etching method | |
TW366531B (en) | Plasma etching process | |
TW363220B (en) | Etching organic antireflective coating from a substrate | |
JPS56155526A (en) | Method of forming film | |
JPS5766625A (en) | Manufacture of film | |
GB2008464A (en) | Improvements in methods of operating and treating evacuated chambers | |
JPS56105480A (en) | Plasma etching method | |
JPS5587438A (en) | Manufacture of semiconductor device | |
JPS56123377A (en) | Plasma cleaning and etching method | |
JPS53110374A (en) | Manufacture of semiconductor device | |
JPS5298475A (en) | Plasma treating apparatus | |
JPS57200569A (en) | Apparatus for treating surface with gas decomposed by light | |
JPS572585A (en) | Forming method for aluminum electrode | |
JPS5621330A (en) | Method of dry etching | |
JPS62237733A (en) | Oxidation and apparatus therefor | |
JPS6428925A (en) | Formation of insulating film | |
JPS5629328A (en) | Plasma etching method | |
JPS5615045A (en) | Formation of pattern | |
JPS5547381A (en) | Plasma etching method | |
JPS5255864A (en) | Dry etching device | |
JPS647623A (en) | Cleaning method for si surface by dry type | |
JPS57194521A (en) | Manufacture of thin film semiconductor | |
JPS563680A (en) | Etching method | |
TW344118B (en) | Etch process for single crystal silicon |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |