JPS6428925A - Formation of insulating film - Google Patents

Formation of insulating film

Info

Publication number
JPS6428925A
JPS6428925A JP18599787A JP18599787A JPS6428925A JP S6428925 A JPS6428925 A JP S6428925A JP 18599787 A JP18599787 A JP 18599787A JP 18599787 A JP18599787 A JP 18599787A JP S6428925 A JPS6428925 A JP S6428925A
Authority
JP
Japan
Prior art keywords
insulating film
level
steep
uneven parts
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18599787A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Kenji Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP18599787A priority Critical patent/JPS6428925A/en
Publication of JPS6428925A publication Critical patent/JPS6428925A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a high-quality insulating film without a steep difference in level between uneven parts by a method wherein a process to form the insulating film uniformly on the surface of a substrate having the steep difference in level between the uneven parts and a process to etch back one part of the formed insulating film by a plasma etching operation are executed at least more than once. CONSTITUTION:A silicon oxide film 10 is formed on an unevenly shaped substrate 1 by a photo CVD method; the unevenly shaped substrate is covered uniformly. Then, a pressure inside a reaction chamber is adjusted to 10Pa; a high-frequency electric power of 300W is impressed on a part between a mesh electrode and a substrate support substance. A ratio of SiH4 to N2O of a reaction gas is set to 0.5-0.05; other conditions are identical to those of the photo CVD method; a silicon oxide film 11 of a thickness of about 1.5mum-2.0mum is formed. Then, an organic halogenide gas is introduced into the reaction chamber; the pressure is adjusted to 10Pa; the electric power is impressed on the part between the mesh electrode and the substrate support substance; a plasma discharge is generated; the formed film 11 is etched; a steep part of the difference in level between the uneven parts is removed.
JP18599787A 1987-07-24 1987-07-24 Formation of insulating film Pending JPS6428925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18599787A JPS6428925A (en) 1987-07-24 1987-07-24 Formation of insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18599787A JPS6428925A (en) 1987-07-24 1987-07-24 Formation of insulating film

Publications (1)

Publication Number Publication Date
JPS6428925A true JPS6428925A (en) 1989-01-31

Family

ID=16180563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18599787A Pending JPS6428925A (en) 1987-07-24 1987-07-24 Formation of insulating film

Country Status (1)

Country Link
JP (1) JPS6428925A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6448425A (en) * 1987-08-18 1989-02-22 Semiconductor Energy Lab Forming method of insulating film
JPH0697158A (en) * 1991-09-12 1994-04-08 Semiconductor Energy Lab Co Ltd Optical vapor-phase reaction method
US5855970A (en) * 1986-09-09 1999-01-05 Semiconductor Energy Laboratory Co., Ltd. Method of forming a film on a substrate
US6013338A (en) * 1986-09-09 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
USRE38363E1 (en) * 1991-11-29 2003-12-23 Sony Corporation Method of forming trench isolation having polishing step and method of manufacturing semiconductor device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756948A (en) * 1980-09-22 1982-04-05 Toshiba Corp Manufacture of semiconductor device
JPS5772346A (en) * 1980-10-24 1982-05-06 Toshiba Corp Manufacture of semiconductor device
JPS5773969A (en) * 1980-10-28 1982-05-08 Toshiba Corp Manufacture of semiconductor device
JPS57100749A (en) * 1980-12-15 1982-06-23 Toshiba Corp Manufacture of semiconductor device
JPS57157545A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS57167656A (en) * 1981-04-08 1982-10-15 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS59188936A (en) * 1983-04-11 1984-10-26 Hitachi Ltd Manufacture of semiconductor device
JPS60212224A (en) * 1984-04-06 1985-10-24 Ushio Inc Photochemical reaction apparatus
JPS62109977A (en) * 1985-11-07 1987-05-21 Nec Corp Photochemical vapor growth device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756948A (en) * 1980-09-22 1982-04-05 Toshiba Corp Manufacture of semiconductor device
JPS5772346A (en) * 1980-10-24 1982-05-06 Toshiba Corp Manufacture of semiconductor device
JPS5773969A (en) * 1980-10-28 1982-05-08 Toshiba Corp Manufacture of semiconductor device
JPS57100749A (en) * 1980-12-15 1982-06-23 Toshiba Corp Manufacture of semiconductor device
JPS57157545A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS57167656A (en) * 1981-04-08 1982-10-15 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS59188936A (en) * 1983-04-11 1984-10-26 Hitachi Ltd Manufacture of semiconductor device
JPS60212224A (en) * 1984-04-06 1985-10-24 Ushio Inc Photochemical reaction apparatus
JPS62109977A (en) * 1985-11-07 1987-05-21 Nec Corp Photochemical vapor growth device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5855970A (en) * 1986-09-09 1999-01-05 Semiconductor Energy Laboratory Co., Ltd. Method of forming a film on a substrate
US6013338A (en) * 1986-09-09 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
JPS6448425A (en) * 1987-08-18 1989-02-22 Semiconductor Energy Lab Forming method of insulating film
JPH0697158A (en) * 1991-09-12 1994-04-08 Semiconductor Energy Lab Co Ltd Optical vapor-phase reaction method
USRE38363E1 (en) * 1991-11-29 2003-12-23 Sony Corporation Method of forming trench isolation having polishing step and method of manufacturing semiconductor device

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