JPS6428925A - Formation of insulating film - Google Patents
Formation of insulating filmInfo
- Publication number
- JPS6428925A JPS6428925A JP18599787A JP18599787A JPS6428925A JP S6428925 A JPS6428925 A JP S6428925A JP 18599787 A JP18599787 A JP 18599787A JP 18599787 A JP18599787 A JP 18599787A JP S6428925 A JPS6428925 A JP S6428925A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- level
- steep
- uneven parts
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a high-quality insulating film without a steep difference in level between uneven parts by a method wherein a process to form the insulating film uniformly on the surface of a substrate having the steep difference in level between the uneven parts and a process to etch back one part of the formed insulating film by a plasma etching operation are executed at least more than once. CONSTITUTION:A silicon oxide film 10 is formed on an unevenly shaped substrate 1 by a photo CVD method; the unevenly shaped substrate is covered uniformly. Then, a pressure inside a reaction chamber is adjusted to 10Pa; a high-frequency electric power of 300W is impressed on a part between a mesh electrode and a substrate support substance. A ratio of SiH4 to N2O of a reaction gas is set to 0.5-0.05; other conditions are identical to those of the photo CVD method; a silicon oxide film 11 of a thickness of about 1.5mum-2.0mum is formed. Then, an organic halogenide gas is introduced into the reaction chamber; the pressure is adjusted to 10Pa; the electric power is impressed on the part between the mesh electrode and the substrate support substance; a plasma discharge is generated; the formed film 11 is etched; a steep part of the difference in level between the uneven parts is removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18599787A JPS6428925A (en) | 1987-07-24 | 1987-07-24 | Formation of insulating film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18599787A JPS6428925A (en) | 1987-07-24 | 1987-07-24 | Formation of insulating film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6428925A true JPS6428925A (en) | 1989-01-31 |
Family
ID=16180563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18599787A Pending JPS6428925A (en) | 1987-07-24 | 1987-07-24 | Formation of insulating film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6428925A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6448425A (en) * | 1987-08-18 | 1989-02-22 | Semiconductor Energy Lab | Forming method of insulating film |
JPH0697158A (en) * | 1991-09-12 | 1994-04-08 | Semiconductor Energy Lab Co Ltd | Optical vapor-phase reaction method |
US5855970A (en) * | 1986-09-09 | 1999-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a film on a substrate |
US6013338A (en) * | 1986-09-09 | 2000-01-11 | Semiconductor Energy Laboratory Co., Ltd. | CVD apparatus |
USRE38363E1 (en) * | 1991-11-29 | 2003-12-23 | Sony Corporation | Method of forming trench isolation having polishing step and method of manufacturing semiconductor device |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5756948A (en) * | 1980-09-22 | 1982-04-05 | Toshiba Corp | Manufacture of semiconductor device |
JPS5772346A (en) * | 1980-10-24 | 1982-05-06 | Toshiba Corp | Manufacture of semiconductor device |
JPS5773969A (en) * | 1980-10-28 | 1982-05-08 | Toshiba Corp | Manufacture of semiconductor device |
JPS57100749A (en) * | 1980-12-15 | 1982-06-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS57157545A (en) * | 1981-03-25 | 1982-09-29 | Toshiba Corp | Manufacture of semiconductor device |
JPS57167656A (en) * | 1981-04-08 | 1982-10-15 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS59188936A (en) * | 1983-04-11 | 1984-10-26 | Hitachi Ltd | Manufacture of semiconductor device |
JPS60212224A (en) * | 1984-04-06 | 1985-10-24 | Ushio Inc | Photochemical reaction apparatus |
JPS62109977A (en) * | 1985-11-07 | 1987-05-21 | Nec Corp | Photochemical vapor growth device |
-
1987
- 1987-07-24 JP JP18599787A patent/JPS6428925A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5756948A (en) * | 1980-09-22 | 1982-04-05 | Toshiba Corp | Manufacture of semiconductor device |
JPS5772346A (en) * | 1980-10-24 | 1982-05-06 | Toshiba Corp | Manufacture of semiconductor device |
JPS5773969A (en) * | 1980-10-28 | 1982-05-08 | Toshiba Corp | Manufacture of semiconductor device |
JPS57100749A (en) * | 1980-12-15 | 1982-06-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS57157545A (en) * | 1981-03-25 | 1982-09-29 | Toshiba Corp | Manufacture of semiconductor device |
JPS57167656A (en) * | 1981-04-08 | 1982-10-15 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS59188936A (en) * | 1983-04-11 | 1984-10-26 | Hitachi Ltd | Manufacture of semiconductor device |
JPS60212224A (en) * | 1984-04-06 | 1985-10-24 | Ushio Inc | Photochemical reaction apparatus |
JPS62109977A (en) * | 1985-11-07 | 1987-05-21 | Nec Corp | Photochemical vapor growth device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5855970A (en) * | 1986-09-09 | 1999-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a film on a substrate |
US6013338A (en) * | 1986-09-09 | 2000-01-11 | Semiconductor Energy Laboratory Co., Ltd. | CVD apparatus |
JPS6448425A (en) * | 1987-08-18 | 1989-02-22 | Semiconductor Energy Lab | Forming method of insulating film |
JPH0697158A (en) * | 1991-09-12 | 1994-04-08 | Semiconductor Energy Lab Co Ltd | Optical vapor-phase reaction method |
USRE38363E1 (en) * | 1991-11-29 | 2003-12-23 | Sony Corporation | Method of forming trench isolation having polishing step and method of manufacturing semiconductor device |
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