EP0878823A3 - Plasma-enhanced chemical vapor deposition apparatus and method M - Google Patents

Plasma-enhanced chemical vapor deposition apparatus and method M Download PDF

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Publication number
EP0878823A3
EP0878823A3 EP98302609A EP98302609A EP0878823A3 EP 0878823 A3 EP0878823 A3 EP 0878823A3 EP 98302609 A EP98302609 A EP 98302609A EP 98302609 A EP98302609 A EP 98302609A EP 0878823 A3 EP0878823 A3 EP 0878823A3
Authority
EP
European Patent Office
Prior art keywords
susceptor
region
plasma
vapor deposition
chemical vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98302609A
Other languages
German (de)
French (fr)
Other versions
EP0878823A2 (en
Inventor
Tetsuya Taguwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of EP0878823A2 publication Critical patent/EP0878823A2/en
Publication of EP0878823A3 publication Critical patent/EP0878823A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Abstract

There is provided a plasma-enhanced chemical vapor deposition apparatus including a reaction chamber (21) into which a process gas is introduced and from which an exhausted gas is discharged, a susceptor (22) having a first region (22a) on which a semiconductor substrate (23) is to be placed and a second region (22b) other than the first region (22a), and an electrode (24) located in facing relation with the susceptor (22) and cooperating with the susceptor (22) to generate plasma (25) therebetween for forming a thin film on the semiconductor substrate (23) placed on the first region (22a) of the susceptor (22), characterized by a ceramics insulator (28) located between the second region (22b) of the susceptor (22) and the plasma (25). The above-mentioned apparatus enhances uniformity of a thin metal film to be formed on a semiconductor substrate, and further improves a barrier characteristic of the thin metal film.
EP98302609A 1997-04-02 1998-04-02 Plasma-enhanced chemical vapor deposition apparatus and method M Withdrawn EP0878823A3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP83695/97 1997-04-02
JP8369597 1997-04-02
JP09083695A JP3077623B2 (en) 1997-04-02 1997-04-02 Plasma chemical vapor deposition equipment

Publications (2)

Publication Number Publication Date
EP0878823A2 EP0878823A2 (en) 1998-11-18
EP0878823A3 true EP0878823A3 (en) 2000-10-04

Family

ID=13809640

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98302609A Withdrawn EP0878823A3 (en) 1997-04-02 1998-04-02 Plasma-enhanced chemical vapor deposition apparatus and method M

Country Status (5)

Country Link
US (2) US6167836B1 (en)
EP (1) EP0878823A3 (en)
JP (1) JP3077623B2 (en)
KR (1) KR100293961B1 (en)
CN (1) CN1117889C (en)

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JP3077623B2 (en) 1997-04-02 2000-08-14 日本電気株式会社 Plasma chemical vapor deposition equipment
US6841203B2 (en) * 1997-12-24 2005-01-11 Tokyo Electron Limited Method of forming titanium film by CVD
JP4726369B2 (en) * 1999-06-19 2011-07-20 エー・エス・エムジニテックコリア株式会社 Chemical vapor deposition reactor and thin film forming method using the same
KR100320198B1 (en) * 1999-08-21 2002-03-13 구자홍 Electrode of dc plasma polymerization system
US6482931B2 (en) 2000-03-24 2002-11-19 Merial Process for the preparation of 9-deoxo-8a-aza-(8a-alkyl)-8a-homoerythromycin A derivatives from 9-deoxo-9 (Z)-hydroxyiminoerythromycin A
JP2002134484A (en) * 2000-10-19 2002-05-10 Asm Japan Kk Semiconductor substrate holding device
JP3822059B2 (en) * 2001-02-01 2006-09-13 独立行政法人科学技術振興機構 Method of warping deformation of silicon substrate
US20030129501A1 (en) * 2002-01-04 2003-07-10 Mischa Megens Fabricating artificial crystalline structures
US6960263B2 (en) 2002-04-25 2005-11-01 Applied Materials, Inc. Shadow frame with cross beam for semiconductor equipment
WO2004108979A1 (en) * 2003-06-02 2004-12-16 Shincron Co., Ltd. Thin film forming device and thin film forming method
US20050103274A1 (en) * 2003-11-14 2005-05-19 Cheng-Tsung Yu Reliability assessment system and method
KR20040027779A (en) * 2004-03-04 2004-04-01 성용진 Cushion sheet for a chair
TWI384086B (en) * 2004-03-15 2013-02-01 Ulvac Inc Film forming apparatus and thin film forming method
US7501161B2 (en) * 2004-06-01 2009-03-10 Applied Materials, Inc. Methods and apparatus for reducing arcing during plasma processing
KR101119798B1 (en) * 2004-12-29 2012-03-23 엘지디스플레이 주식회사 Chemical vapor deposition system
FR2889204B1 (en) * 2005-07-26 2007-11-30 Sidel Sas APPARATUS FOR THE PECVD DEPOSITION OF AN INTERNAL BARRIER LAYER ON A CONTAINER, COMPRISING A GAS LINE ISOLATED BY ELECTROVANNE
KR101206725B1 (en) * 2006-07-26 2012-11-30 주성엔지니어링(주) Substrate processing apparatus in which buffer insulator is insulted in gap between different potential surfaces
CN101560652B (en) * 2008-04-18 2011-04-27 群康科技(深圳)有限公司 Plasma assistant chemical vapor deposition device
CN105590824B (en) * 2014-10-20 2017-11-03 中微半导体设备(上海)有限公司 A kind of plasma processing device
US11615946B2 (en) * 2018-07-31 2023-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Baffle plate for controlling wafer uniformity and methods for making the same

Citations (5)

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JPS5992520A (en) * 1982-11-19 1984-05-28 Hitachi Ltd Gas electrochemical reaction device
EP0676790A1 (en) * 1994-04-05 1995-10-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
EP0680075A1 (en) * 1993-11-18 1995-11-02 Ngk Insulators, Ltd. Electrode for generating plasma, element for burying electrode, and method for manufacturing the electrode and the element
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
US5552124A (en) * 1994-06-22 1996-09-03 Applied Materials, Inc. Stationary focus ring for plasma reactor

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US4512867A (en) * 1981-11-24 1985-04-23 Andreev Anatoly A Method and apparatus for controlling plasma generation in vapor deposition
JPS6237922A (en) 1985-08-12 1987-02-18 Matsushita Electric Ind Co Ltd Semiconductor substrate
JPH01188678A (en) 1988-01-22 1989-07-27 Mitsubishi Electric Corp Plasma vapor growth apparatus
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
EP0653501B1 (en) * 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
JPH07249586A (en) * 1993-12-22 1995-09-26 Tokyo Electron Ltd Treatment device and its manufacturing method and method for treating body to be treated
JPH07226378A (en) 1994-02-10 1995-08-22 Sony Corp Film forming method and plasma device using for this method
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JPH07288232A (en) 1994-04-18 1995-10-31 Sony Corp Manufacturing method and apparatus for metal containing film
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
JPH08255758A (en) 1995-03-15 1996-10-01 Toshiba Corp Plasma vapor growth device
JP3192370B2 (en) 1995-06-08 2001-07-23 東京エレクトロン株式会社 Plasma processing equipment
JPH09111460A (en) * 1995-10-11 1997-04-28 Anelva Corp Production of titanium based conductive thin film
JPH09316299A (en) 1996-05-27 1997-12-09 Nof Corp Epoxy resin composition
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
JP3077623B2 (en) 1997-04-02 2000-08-14 日本電気株式会社 Plasma chemical vapor deposition equipment
US5942039A (en) * 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JPS5992520A (en) * 1982-11-19 1984-05-28 Hitachi Ltd Gas electrochemical reaction device
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
EP0680075A1 (en) * 1993-11-18 1995-11-02 Ngk Insulators, Ltd. Electrode for generating plasma, element for burying electrode, and method for manufacturing the electrode and the element
EP0676790A1 (en) * 1994-04-05 1995-10-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
US5552124A (en) * 1994-06-22 1996-09-03 Applied Materials, Inc. Stationary focus ring for plasma reactor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HILLMAN ET AL.: "Titanium chemical vapor deposition", VLSI MULTILEVEL INTERCONNECTION CONFERENCE, 1994, pages 365 - 367, XP002143262 *
PATENT ABSTRACTS OF JAPAN vol. 008, no. 206 (E - 267) 20 September 1984 (1984-09-20) *

Also Published As

Publication number Publication date
CN1198480A (en) 1998-11-11
US6167836B1 (en) 2001-01-02
US6432493B1 (en) 2002-08-13
EP0878823A2 (en) 1998-11-18
JPH10280154A (en) 1998-10-20
KR19980080992A (en) 1998-11-25
KR100293961B1 (en) 2001-08-07
JP3077623B2 (en) 2000-08-14
CN1117889C (en) 2003-08-13

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