JPH02234419A - Plasma electrode - Google Patents

Plasma electrode

Info

Publication number
JPH02234419A
JPH02234419A JP5463789A JP5463789A JPH02234419A JP H02234419 A JPH02234419 A JP H02234419A JP 5463789 A JP5463789 A JP 5463789A JP 5463789 A JP5463789 A JP 5463789A JP H02234419 A JPH02234419 A JP H02234419A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
gas
plasma
etching
kinds
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5463789A
Inventor
Takehiko Futaki
Yuko Hochido
Hidechika Yokoyama
Original Assignee
Koujiyundo Kagaku Kenkyusho:Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To allow mixture gas to react until it reaches a wafer to cause the reaction product to be dust, preventing a CVD reaction chamber or an etching chamber, etc., from being contaminated by a method wherein when two or more kinds of material gas or etching gas are to be used, these kinds of gas are separately supplied to an electrode and plasma.
CONSTITUTION: Material gas or etching gas introduced from a first gas inlet tube 7 with its flow rate adjusted flows out from a plurality of first gas outlet ports 10 to enter plasma. Material gas or etching gas introduced from a second gas inlet tube 8 with its flow rate adjusted flows out from a plurality of second gas outlet ports 11 to enter the plasma. Therefore these two kinds of gas are not mixed in advance but supplied to the plasma separately. This allows reaction product to be dust preventing a CVD reaction chamber or an etching chamber from being contaminated.
COPYRIGHT: (C)1990,JPO&Japio
JP5463789A 1989-03-07 1989-03-07 Plasma electrode Pending JPH02234419A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5463789A JPH02234419A (en) 1989-03-07 1989-03-07 Plasma electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5463789A JPH02234419A (en) 1989-03-07 1989-03-07 Plasma electrode

Publications (1)

Publication Number Publication Date
JPH02234419A true true JPH02234419A (en) 1990-09-17

Family

ID=12976286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5463789A Pending JPH02234419A (en) 1989-03-07 1989-03-07 Plasma electrode

Country Status (1)

Country Link
JP (1) JPH02234419A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04233723A (en) * 1990-08-23 1992-08-21 Applied Materials Inc Variable distribution ratio gas flow reaction chamber
US5500256A (en) * 1994-08-16 1996-03-19 Fujitsu Limited Dry process apparatus using plural kinds of gas
US5624498A (en) * 1993-12-22 1997-04-29 Samsung Electronics Co., Ltd. Showerhead for a gas supplying apparatus
WO1997015698A1 (en) * 1995-10-23 1997-05-01 Watkins-Johnson Company Gas injection system for semiconductor processing
US5669976A (en) * 1990-12-28 1997-09-23 Mitsubishi Denki Kabushiki Kaisha CVD method and apparatus therefor
US5871586A (en) * 1994-06-14 1999-02-16 T. Swan & Co. Limited Chemical vapor deposition
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
US6143144A (en) * 1999-07-30 2000-11-07 Tokyo Electronlimited Method for etch rate enhancement by background oxygen control in a soft etch system
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6173673B1 (en) 1999-03-31 2001-01-16 Tokyo Electron Limited Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
US7306829B2 (en) * 2000-04-26 2007-12-11 Unaxis Balzers Aktiengesellschaft RF plasma reactor having a distribution chamber with at least one grid
JP2009260258A (en) * 2008-03-19 2009-11-05 Tokyo Electron Ltd Shower head and substrate processing apparatus
KR100974566B1 (en) * 2008-08-08 2010-08-06 한국생산기술연구원 Atmospheric Plasma Apparatus
US8361892B2 (en) 2010-04-14 2013-01-29 Applied Materials, Inc. Multiple precursor showerhead with by-pass ports
US9057128B2 (en) 2011-03-18 2015-06-16 Applied Materials, Inc. Multiple level showerhead design

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04233723A (en) * 1990-08-23 1992-08-21 Applied Materials Inc Variable distribution ratio gas flow reaction chamber
US6022811A (en) * 1990-12-28 2000-02-08 Mitsubishi Denki Kabushiki Kaisha Method of uniform CVD
US5669976A (en) * 1990-12-28 1997-09-23 Mitsubishi Denki Kabushiki Kaisha CVD method and apparatus therefor
US5624498A (en) * 1993-12-22 1997-04-29 Samsung Electronics Co., Ltd. Showerhead for a gas supplying apparatus
US5871586A (en) * 1994-06-14 1999-02-16 T. Swan & Co. Limited Chemical vapor deposition
US5500256A (en) * 1994-08-16 1996-03-19 Fujitsu Limited Dry process apparatus using plural kinds of gas
WO1997015698A1 (en) * 1995-10-23 1997-05-01 Watkins-Johnson Company Gas injection system for semiconductor processing
US5851294A (en) * 1995-10-23 1998-12-22 Watkins-Johnson Company Gas injection system for semiconductor processing
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
US6368987B1 (en) 1997-09-30 2002-04-09 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6173673B1 (en) 1999-03-31 2001-01-16 Tokyo Electron Limited Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
US6143144A (en) * 1999-07-30 2000-11-07 Tokyo Electronlimited Method for etch rate enhancement by background oxygen control in a soft etch system
US7306829B2 (en) * 2000-04-26 2007-12-11 Unaxis Balzers Aktiengesellschaft RF plasma reactor having a distribution chamber with at least one grid
US20080093341A1 (en) * 2000-04-26 2008-04-24 Unaxis Balzers Aktiengesellschaft RF Plasma Reactor Having a Distribution Chamber with at Least One Grid
US9045828B2 (en) 2000-04-26 2015-06-02 Tel Solar Ag RF plasma reactor having a distribution chamber with at least one grid
JP2009260258A (en) * 2008-03-19 2009-11-05 Tokyo Electron Ltd Shower head and substrate processing apparatus
US8366828B2 (en) 2008-03-19 2013-02-05 Tokyo Electron Limited Shower head and substrate processing apparatus
KR100974566B1 (en) * 2008-08-08 2010-08-06 한국생산기술연구원 Atmospheric Plasma Apparatus
US8361892B2 (en) 2010-04-14 2013-01-29 Applied Materials, Inc. Multiple precursor showerhead with by-pass ports
US9057128B2 (en) 2011-03-18 2015-06-16 Applied Materials, Inc. Multiple level showerhead design

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