WO1999028955A3 - Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step - Google Patents
Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step Download PDFInfo
- Publication number
- WO1999028955A3 WO1999028955A3 PCT/US1998/023740 US9823740W WO9928955A3 WO 1999028955 A3 WO1999028955 A3 WO 1999028955A3 US 9823740 W US9823740 W US 9823740W WO 9928955 A3 WO9928955 A3 WO 9928955A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- deposition
- stage
- titanium
- gas
- substrate
- Prior art date
Links
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title abstract 5
- 229910052719 titanium Inorganic materials 0.000 title abstract 5
- 239000010936 titanium Substances 0.000 title abstract 5
- 238000005229 chemical vapour deposition Methods 0.000 title abstract 2
- 238000011065 in-situ storage Methods 0.000 title 1
- 238000000151 deposition Methods 0.000 abstract 7
- 230000008021 deposition Effects 0.000 abstract 6
- 239000007789 gas Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020007006015A KR20010032726A (en) | 1997-12-02 | 1998-11-06 | Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step |
JP2000523700A JP4511721B2 (en) | 1997-12-02 | 1998-11-06 | Titanium chemical vapor deposition on wafer including in situ pre-cleaning step |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US98287297A | 1997-12-02 | 1997-12-02 | |
US08/982,872 | 1997-12-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999028955A2 WO1999028955A2 (en) | 1999-06-10 |
WO1999028955A3 true WO1999028955A3 (en) | 1999-09-16 |
Family
ID=25529591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/023740 WO1999028955A2 (en) | 1997-12-02 | 1998-11-06 | Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4511721B2 (en) |
KR (1) | KR20010032726A (en) |
TW (1) | TW507015B (en) |
WO (1) | WO1999028955A2 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6355571B1 (en) | 1998-11-17 | 2002-03-12 | Applied Materials, Inc. | Method and apparatus for reducing copper oxidation and contamination in a semiconductor device |
JP4741769B2 (en) * | 1999-07-26 | 2011-08-10 | 東京エレクトロン株式会社 | Manufacturing method of semiconductor device |
US7169704B2 (en) | 2002-06-21 | 2007-01-30 | Samsung Electronics Co., Ltd. | Method of cleaning a surface of a water in connection with forming a barrier layer of a semiconductor device |
KR100447284B1 (en) | 2002-07-19 | 2004-09-07 | 삼성전자주식회사 | Method of cleaning chemical vapor deposition chamber |
KR100703650B1 (en) * | 2005-11-30 | 2007-04-06 | 주식회사 아이피에스 | Apparatus for depositing thin film on wafer |
US7341950B2 (en) | 2005-12-07 | 2008-03-11 | Infineon Technologies Ag | Method for controlling a thickness of a first layer and method for adjusting the thickness of different first layers |
WO2007105432A1 (en) * | 2006-02-24 | 2007-09-20 | Tokyo Electron Limited | METHOD FOR FORMING Ti-BASED FILM AND STORAGE MEDIUM |
US7790635B2 (en) * | 2006-12-14 | 2010-09-07 | Applied Materials, Inc. | Method to increase the compressive stress of PECVD dielectric films |
US20110151142A1 (en) * | 2009-12-22 | 2011-06-23 | Applied Materials, Inc. | Pecvd multi-step processing with continuous plasma |
US20130075262A1 (en) * | 2011-09-22 | 2013-03-28 | Catcher Technology Co., Ltd. | Method of forming anodic titanium oxide layers having dual-color appearance and article having the same |
JP6284786B2 (en) * | 2014-02-27 | 2018-02-28 | 東京エレクトロン株式会社 | Cleaning method for plasma processing apparatus |
CN109920717B (en) * | 2019-03-08 | 2022-06-17 | 拓荆科技股份有限公司 | Wafer processing device |
KR102141547B1 (en) * | 2019-09-25 | 2020-09-14 | 솔브레인 주식회사 | Method for forming thin film |
KR102156663B1 (en) * | 2019-09-25 | 2020-09-21 | 솔브레인 주식회사 | Method for forming thin film |
KR20220167017A (en) * | 2021-06-11 | 2022-12-20 | 주성엔지니어링(주) | Method for forming a barrier layer |
KR102578955B1 (en) * | 2023-02-08 | 2023-09-15 | 초이스테크닉스 주식회사 | Female connecter for electrical wiring of a chemical vapor deposition apparatus |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5015330A (en) * | 1989-02-28 | 1991-05-14 | Kabushiki Kaisha Toshiba | Film forming method and film forming device |
JPH0562929A (en) * | 1991-09-03 | 1993-03-12 | Sharp Corp | Manufacturing method of semiconductor device |
US5508066A (en) * | 1991-10-07 | 1996-04-16 | Sumitomo Metal Industries, Ltd. | Method for forming a thin film |
JPH08176823A (en) * | 1994-12-26 | 1996-07-09 | Sony Corp | Formation of thin film of high melting point metal |
JPH09205070A (en) * | 1996-01-25 | 1997-08-05 | Sony Corp | Plasma cvd system and semiconductor device having metal film formed thereby |
EP0798777A2 (en) * | 1996-03-29 | 1997-10-01 | Siemens Aktiengesellschaft | Method of metallizing submicronie (e.g. micronie) contact holes in semiconductor body |
WO1998034445A1 (en) * | 1997-01-31 | 1998-08-06 | Tokyo Electron Arizona, Inc. | Method and apparatus for metallizing high aspect ratio silicon semiconductor device contacts |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05211134A (en) * | 1991-10-07 | 1993-08-20 | Sumitomo Metal Ind Ltd | Forming method of thin film and forming equipment of thin film |
US5345968A (en) * | 1993-03-24 | 1994-09-13 | General Electric Company | Rotary magnetic valve for low noise low wear operation |
JP2978748B2 (en) * | 1995-11-22 | 1999-11-15 | 日本電気株式会社 | Method for manufacturing semiconductor device |
JPH09181061A (en) * | 1995-12-25 | 1997-07-11 | Hitachi Ltd | Liq. material gasifying method and feeder and semiconductor producing apparatus constituted, using it |
-
1998
- 1998-11-03 TW TW87118298A patent/TW507015B/en not_active IP Right Cessation
- 1998-11-06 JP JP2000523700A patent/JP4511721B2/en not_active Expired - Lifetime
- 1998-11-06 WO PCT/US1998/023740 patent/WO1999028955A2/en not_active Application Discontinuation
- 1998-11-06 KR KR1020007006015A patent/KR20010032726A/en not_active Application Discontinuation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5015330A (en) * | 1989-02-28 | 1991-05-14 | Kabushiki Kaisha Toshiba | Film forming method and film forming device |
JPH0562929A (en) * | 1991-09-03 | 1993-03-12 | Sharp Corp | Manufacturing method of semiconductor device |
US5508066A (en) * | 1991-10-07 | 1996-04-16 | Sumitomo Metal Industries, Ltd. | Method for forming a thin film |
JPH08176823A (en) * | 1994-12-26 | 1996-07-09 | Sony Corp | Formation of thin film of high melting point metal |
US5747384A (en) * | 1994-12-26 | 1998-05-05 | Sony Corporation | Process of forming a refractory metal thin film |
JPH09205070A (en) * | 1996-01-25 | 1997-08-05 | Sony Corp | Plasma cvd system and semiconductor device having metal film formed thereby |
EP0798777A2 (en) * | 1996-03-29 | 1997-10-01 | Siemens Aktiengesellschaft | Method of metallizing submicronie (e.g. micronie) contact holes in semiconductor body |
WO1998034445A1 (en) * | 1997-01-31 | 1998-08-06 | Tokyo Electron Arizona, Inc. | Method and apparatus for metallizing high aspect ratio silicon semiconductor device contacts |
Non-Patent Citations (7)
Title |
---|
BOUTEVILLE A ET AL: "LPCVD OF TITANIUM DISILICIDE", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 134, no. 8, August 1987 (1987-08-01), pages 2080 - 2083, XP000022788 * |
DATABASE WPI Section Ch Week 9741, Derwent World Patents Index; Class L03, AN 97-446115, XP002092035 * |
JAEGAB LEE ET AL: "PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF BLANKET TISI2 ON OXIDE PATTERNED WAFERS. I GROWTH OF SILICIDE", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 139, no. 4, 1 April 1992 (1992-04-01), pages 1159 - 1165, XP000359229 * |
PATENT ABSTRACTS OF JAPAN vol. 017, no. 375 (E - 1397) 14 July 1993 (1993-07-14) * |
PATENT ABSTRACTS OF JAPAN vol. 096, no. 011 29 November 1996 (1996-11-29) * |
PATENT ABSTRACTS OF JAPAN vol. 97, no. 12 25 December 1997 (1997-12-25) * |
TAGUWA T ET AL: "LOW CONTACT RESISTANCE METALLIZATION FOR GIGABIT SCALE DRAMS USING FULLY-DRY CLEANING BY AR/H2 ECR PLASMA", TECHNICAL DIGEST OF THE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), WASHINGTON, DEC. 10 - 13, 1995, 10 December 1995 (1995-12-10), INSTITUTE OF ELECTRICAL AND ELECTRONIC ENGINEERS, pages 695 - 698, XP000624789 * |
Also Published As
Publication number | Publication date |
---|---|
WO1999028955A2 (en) | 1999-06-10 |
JP2001525613A (en) | 2001-12-11 |
KR20010032726A (en) | 2001-04-25 |
TW507015B (en) | 2002-10-21 |
JP4511721B2 (en) | 2010-07-28 |
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