JPS57116774A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS57116774A JPS57116774A JP320781A JP320781A JPS57116774A JP S57116774 A JPS57116774 A JP S57116774A JP 320781 A JP320781 A JP 320781A JP 320781 A JP320781 A JP 320781A JP S57116774 A JPS57116774 A JP S57116774A
- Authority
- JP
- Japan
- Prior art keywords
- temp
- sample
- type gas
- chlorine type
- thermometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To form fine wiring patterns of high density integrated circuits accurately with good reproducibility by etching a sample by means of a chlorine type gas while maintaining the temp. of Al (alloy) which is the sample at a specific temp. range. CONSTITUTION:A chlorine type gas of low pressure is flowed in a vacuum etching chamber 1, and a high frequency electric field is applied by a high frequency electric power source to cause glow discharge and turn the chlorine type gas to plasma. The surface of an Al or Al alloy sample 4 masked with a resist film is etche by the ions and radicals in this plasma. At this time, the temp. of the sample 4 is detected by measuring the intensity of the IR rays generated from the sample 4 with an IR thermometer 8. Cooling water or a heater 6 is automatically controlled with the thermometer 8 so as to maintain the temp. thereof in a 50-130 deg.C, more preferably, 50-80 deg.C temp. range.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP320781A JPS57116774A (en) | 1981-01-14 | 1981-01-14 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP320781A JPS57116774A (en) | 1981-01-14 | 1981-01-14 | Etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57116774A true JPS57116774A (en) | 1982-07-20 |
JPS6358913B2 JPS6358913B2 (en) | 1988-11-17 |
Family
ID=11550988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP320781A Granted JPS57116774A (en) | 1981-01-14 | 1981-01-14 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57116774A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2543166A1 (en) * | 1983-03-25 | 1984-09-28 | Lfe Corp | COMPOSITION AND PROCESS FOR THE SELECTIVE ATTACK, USING PLASMA REACTIVE IONS, ALUMINUM AND ALUMINUM ALLOYS |
JPS62281423A (en) * | 1986-05-30 | 1987-12-07 | Hitachi Ltd | Method and device for dry etching |
JPS63238288A (en) * | 1987-03-27 | 1988-10-04 | Fujitsu Ltd | Dry etching method |
JPH0192384A (en) * | 1987-10-02 | 1989-04-11 | Hitachi Ltd | Plasma treating device |
US9618033B2 (en) | 2006-05-29 | 2017-04-11 | Hi-Lex Corporation | Control cable and remote control device using the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS552718A (en) * | 1978-06-20 | 1980-01-10 | Nakagawa Boshoku Kogyo Kk | Corrosion-preventing method for metal submerged in water |
JPS55154583A (en) * | 1979-05-21 | 1980-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Etching processing apparatus |
-
1981
- 1981-01-14 JP JP320781A patent/JPS57116774A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS552718A (en) * | 1978-06-20 | 1980-01-10 | Nakagawa Boshoku Kogyo Kk | Corrosion-preventing method for metal submerged in water |
JPS55154583A (en) * | 1979-05-21 | 1980-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Etching processing apparatus |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2543166A1 (en) * | 1983-03-25 | 1984-09-28 | Lfe Corp | COMPOSITION AND PROCESS FOR THE SELECTIVE ATTACK, USING PLASMA REACTIVE IONS, ALUMINUM AND ALUMINUM ALLOYS |
JPS62281423A (en) * | 1986-05-30 | 1987-12-07 | Hitachi Ltd | Method and device for dry etching |
JPS63238288A (en) * | 1987-03-27 | 1988-10-04 | Fujitsu Ltd | Dry etching method |
JPH0428791B2 (en) * | 1987-03-27 | 1992-05-15 | Fujitsu Ltd | |
JPH0192384A (en) * | 1987-10-02 | 1989-04-11 | Hitachi Ltd | Plasma treating device |
US9618033B2 (en) | 2006-05-29 | 2017-04-11 | Hi-Lex Corporation | Control cable and remote control device using the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6358913B2 (en) | 1988-11-17 |
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