JPS5582438A - Plasma etching device - Google Patents
Plasma etching deviceInfo
- Publication number
- JPS5582438A JPS5582438A JP15611178A JP15611178A JPS5582438A JP S5582438 A JPS5582438 A JP S5582438A JP 15611178 A JP15611178 A JP 15611178A JP 15611178 A JP15611178 A JP 15611178A JP S5582438 A JPS5582438 A JP S5582438A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- reaction tube
- plasma
- etching
- uniformity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To raise the uniformity of etching, by providing a shielding means near an etched semiconductor substrate in a reaction tube to eliminate the difference in the density of plasma between the central and peripheral parts of the substrate. CONSTITUTION:Metal electrodes 1, 2 are provided outside a reaction tube 3. An etched semiconductor substrate 9 is set in the reaction tube. The pressure in the tube is maintained at a prescribed level. An etching gas is introduced into the reaction tube. High-frequency power is applied across the metal electrodes 1, 2 to etch the substrate 9. An adjusting ring 10 is provided around the substrate 9 to restrict the supply of the etching gas to regulate the concentration of plasma on the peripheral part of the substrate 9 and feed enough plasma to its central part as well. This results in providing a uniform plasma distribution on the total surface of the substrate. Therefore, the uniformity of the etching is enhanced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15611178A JPS5582438A (en) | 1978-12-15 | 1978-12-15 | Plasma etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15611178A JPS5582438A (en) | 1978-12-15 | 1978-12-15 | Plasma etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5582438A true JPS5582438A (en) | 1980-06-21 |
Family
ID=15620543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15611178A Pending JPS5582438A (en) | 1978-12-15 | 1978-12-15 | Plasma etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5582438A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60201632A (en) * | 1984-03-27 | 1985-10-12 | Anelva Corp | Dry etching apparatus |
| JPS633139U (en) * | 1986-06-23 | 1988-01-11 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48102774A (en) * | 1972-04-10 | 1973-12-24 | ||
| JPS52123173A (en) * | 1976-04-08 | 1977-10-17 | Fuji Photo Film Co Ltd | Sputter etching method |
| JPS53125769A (en) * | 1977-04-08 | 1978-11-02 | Nec Corp | Sputter etching method and container used for it |
-
1978
- 1978-12-15 JP JP15611178A patent/JPS5582438A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48102774A (en) * | 1972-04-10 | 1973-12-24 | ||
| JPS52123173A (en) * | 1976-04-08 | 1977-10-17 | Fuji Photo Film Co Ltd | Sputter etching method |
| JPS53125769A (en) * | 1977-04-08 | 1978-11-02 | Nec Corp | Sputter etching method and container used for it |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60201632A (en) * | 1984-03-27 | 1985-10-12 | Anelva Corp | Dry etching apparatus |
| JPH0523053B2 (en) * | 1984-03-27 | 1993-03-31 | Anelva Corp | |
| JPS633139U (en) * | 1986-06-23 | 1988-01-11 | ||
| JPH0514507Y2 (en) * | 1986-06-23 | 1993-04-19 |
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