JPH0523053B2 - - Google Patents
Info
- Publication number
- JPH0523053B2 JPH0523053B2 JP59058602A JP5860284A JPH0523053B2 JP H0523053 B2 JPH0523053 B2 JP H0523053B2 JP 59058602 A JP59058602 A JP 59058602A JP 5860284 A JP5860284 A JP 5860284A JP H0523053 B2 JPH0523053 B2 JP H0523053B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ring
- dry etching
- shaped member
- etching apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 18
- 238000001312 dry etching Methods 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 229920002492 poly(sulfone) Polymers 0.000 claims description 2
- 229920001230 polyarylate Polymers 0.000 claims description 2
- 229920005672 polyolefin resin Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 23
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 description 8
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical class Cl* 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は被処理基板を反応性ガスプラズマによ
りエツチングするドライエツチング装置に関す
る。反応容器内の高周波電極にウエハーを設置
し、これにドライエツチングを施す装置では、従
来は該ウエハーに被覆されない電極部分は不純物
汚染防止や選択比改善のため適当な絶縁材でカバ
ーしていた。この絶縁材はウエハーをマウントす
るための円形の穴を有しているが、一般にウエハ
ーにはオリエンテーシヨンフラツトと呼ばれる弦
で切りとられた切欠ぎ部分（第３図のＡの部分）
を有し、このためこの切欠ぎ部分は絶縁材で被覆
されず、アルマイト処理されたアルミニウムの支
持電極が直接プラズマに曝されていた。かかる装
置でウエハー上のアルミニウム膜にドライエツチ
ングを施すと、ウエハーのオリエンテーシヨンフ
ラツトに近接する周辺部はウエハーの他の部分に
比べエツチング速度が著しく大となり、ウエハー
内のエツチング速度に不均一を生じて、Ａの部分
の周辺部が過度にオーバーエツチングされ、パタ
ーンの細りや下地に損傷を受ける傾向があつた。
本発明はこの問題の解決を目的とする。この種の
ドライエツチング法において、ウエハーのオリエ
ンテーシヨンフラツトに近接する周辺部のエツチ
ング速度が大きくなつている原因は、エツチング
に寄与する反応性ガスあるいはその活性種あるい
はイオン（以後あわせてエツチヤントと呼ぶ）が
絶縁材で被覆されていないオリエンテーシヨンフ
ラツトの近傍で殊に多量となるためである。本発
明はこのような問題に対し、支持電極上のかかる
部位にエツチヤントを減ずる役割をはたす材質を
用いることにより、オリエンテーシヨンフラツト
に近接する周辺部のエツチング速度を下げ、均一
性のよいエツチングを確保せんとするものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dry etching apparatus for etching a substrate to be processed using reactive gas plasma. Conventionally, in equipment that installs a wafer on a high-frequency electrode in a reaction vessel and performs dry etching on the wafer, the part of the electrode that is not covered by the wafer is covered with a suitable insulating material to prevent impurity contamination and improve selectivity. This insulating material has a circular hole for mounting the wafer, but the wafer generally has a notch cut out with a string called an orientation flat (section A in Figure 3).
Therefore, this notch portion was not covered with an insulating material, and the alumite-treated aluminum support electrode was directly exposed to plasma. When dry etching is applied to an aluminum film on a wafer using such a device, the etching rate in the peripheral area near the orientation flat of the wafer is significantly higher than in other parts of the wafer, resulting in non-uniform etching rate within the wafer. As a result, the periphery of the portion A was excessively overetched, and the pattern tended to become thinner and the underlying layer was damaged.
The present invention aims to solve this problem. In this type of dry etching method, the reason why the etching rate is high in the vicinity of the wafer orientation flat is due to the reactive gas that contributes to etching or its active species or ions (hereinafter referred to as the etchant). The reason for this is that the amount of oxidation gas (called 100%) is particularly large in the vicinity of orientation flats that are not covered with insulating material. The present invention solves this problem by using a material that reduces the etchant in this area on the support electrode, thereby reducing the etching rate in the peripheral area near the orientation flat and achieving highly uniform etching. The aim is to ensure that
一方、ウエハーはフオトレジストへのダメージ
を避ける等のため水冷された支持電極と十分に良
い熱接触を保つ必要があるが、エツチヤントを減
ずる役割を果たす材質の多くは熱伝導率が小さ
い。このため該エツチヤントを減ずる役割を果た
す材質は、ウエハーの外周近傍にのみ用いること
が望ましく、ウエハーの殆んどの部分は比較的熱
伝導のよいアルマイト処理されたアルミニウムの
支持電極に直接に接していることが望ましい。そ
こで、装置はこの問題をも満足する必要がある。 On the other hand, the wafer needs to maintain sufficiently good thermal contact with the water-cooled support electrode to avoid damage to the photoresist, but many of the materials that serve to reduce the etchant have low thermal conductivity. For this reason, it is desirable to use materials that play a role in reducing the etchant only near the outer periphery of the wafer, and most parts of the wafer are in direct contact with the anodized aluminum support electrode, which has relatively good thermal conductivity. This is desirable. Therefore, the device must also satisfy this problem.
以下に本発明を実施例により具体的に説明す
る。第１図は本発明の実施例である平行平板型ド
ライエツチング装置の主要部の断面図である。図
で反応容器１０１内には試料を設置する支持電極
１０２と対向電極１０３が互に平行して設置され
ている。支持電極１０２上には複数の円形の受け
台１１２が、伝熱性を良くして点対称形に設けら
れている。該受け台１１２の周囲には、エツチヤ
ントを減ずる役割を果たす物質である超高分子量
ポリエチレンのリング１１１が受け台１１２とほ
ぼ高さを等しくして配置されている。受け台１１
２とリング１１１上に被処理基板であるウエハー
１０４が載置されている。ウエハー周辺の支持電
極表面は超高分子量ポリエチレン製のカバー１０
５で被覆されている。支持電極１０２は軸１１５
のまわりに回転できる構造となつており、フイー
ドスルー１０６を用いて真空内に導入されている
もので、反応容器１０１と同電位の対向電極１０
３と支持電極１０２との間には、高周波電源１０
７により高周波電圧が印加される。対向電極１０
３には反応性ガスを反応容器内に導入するための
ガス吹出し孔１０８が設けられている。 The present invention will be specifically explained below using examples. FIG. 1 is a sectional view of the main parts of a parallel plate type dry etching apparatus according to an embodiment of the present invention. In the figure, a supporting electrode 102 on which a sample is placed and a counter electrode 103 are installed in parallel to each other in a reaction vessel 101. A plurality of circular pedestals 112 are provided on the supporting electrode 102 in a point-symmetric manner to improve heat transfer. Around the pedestal 112, a ring 111 made of ultra-high molecular weight polyethylene, which is a substance that serves to reduce etchants, is arranged at approximately the same height as the pedestal 112. cradle 11
A wafer 104, which is a substrate to be processed, is placed on the ring 111 and the wafer 2. The support electrode surface around the wafer is covered with a cover 10 made of ultra-high molecular weight polyethylene.
5. The supporting electrode 102 is connected to the shaft 115
It has a structure that can be rotated around the reaction vessel 101, and is introduced into the vacuum using a feedthrough 106.
3 and the supporting electrode 102, a high frequency power source 10
A high frequency voltage is applied by 7. Counter electrode 10
3 is provided with a gas blowing hole 108 for introducing reactive gas into the reaction vessel.
第２図は支持電極１０２上の受け台１１２及び
超高分子量ポリエチレン製カバー１０５及び超高
分子量ポリエチレン製リング１１１及びウエハー
１０４を上から見たものである。アルマイト処理
されたアルミ製の受け台１１２はウエハー１０４
により完全におおわれ、プラズマにさらされるの
はウエハー１０４及びエツチヤントの減ずる役割
を果たす超高分子量ポリエチレン製のカバー１０
５及びリング１０４のみである。即ち、受け台１
１２、リング１１１、ウエハー１０４の三者は円
の中心を共通にし、受け台１１２の径及びそれに
嵌装されるリング１１１の内径はウエハー１０４
のオリエンテーシヨンフラツトを超過することが
なく、そしてリング１１１の外径はウエハー１０
４の外径以上となるよう設置は構成される。 FIG. 2 is a top view of the pedestal 112 on the supporting electrode 102, the cover 105 made of ultra-high molecular weight polyethylene, the ring 111 made of ultra-high molecular weight polyethylene, and the wafer 104. The cradle 112 made of anodized aluminum is the wafer 104
Completely covered by the wafer 104 and exposed to the plasma are the wafer 104 and the ultra-high molecular weight polyethylene cover 10 which acts as an etchant attenuator.
5 and ring 104 only. That is, pedestal 1
12, the ring 111, and the wafer 104 share the center of a circle, and the diameter of the pedestal 112 and the inner diameter of the ring 111 fitted therein are the same as the wafer 104.
does not exceed the orientation flat of wafer 10, and the outer diameter of ring 111 is
The installation is configured so that the outer diameter is greater than or equal to 4.
本装置により実際にアルミニウム膜をエツチン
グする場合は次記の如くする。自動搬送機構等を
用いアルミニウム膜で被覆されたウエハー１０４
を受け台１１２上に所定位置に搬送した後、排気
管１０９を通して反応用器１０１内を排気し、そ
の後反応ガス導入管１１０よりBCl３とCl２の混
合気体を主成分とする反応ガスをガス吹出し孔１
０８を通して導入する。反応ガスは各ウエハーに
向かつて吹き出され、排気管１０９を通して排気
される。この時排気管１０９のコンダクタンスを
調整し、反応容器１０１内の圧力が所定圧力にな
るように設定しておく。この状態で、高周波電源
１０７により支持電極１０２と対向電極１０３の
間に高周波電力を印加すると放電によりエツチヤ
ントを生じ、ウエハー１０４表面のアルミニウム
をエツチングすることができる。アルミニウム表
面の薄い酸化膜がエツチングされた後のアルミニ
ウム膜のエツチヤントは主に活性化された塩素で
あると考えられ、ウエハー内のエツチング速度は
このエツチヤントの濃度に依存する。 When actually etching an aluminum film using this apparatus, the following procedure is performed. Wafer 104 coated with aluminum film using an automatic transport mechanism etc.
After being transferred to a predetermined position on the receiving table 112, the inside of the reaction vessel 101 is evacuated through the exhaust pipe 109, and then a reaction gas mainly composed of a mixed gas of BCl3 and Cl2 is introduced from the reaction gas introduction pipe 110 through the gas blowing hole. 1
It will be introduced through 2008. The reaction gas is blown toward each wafer and exhausted through the exhaust pipe 109. At this time, the conductance of the exhaust pipe 109 is adjusted to set the pressure inside the reaction vessel 101 to a predetermined pressure. In this state, when high frequency power is applied between the supporting electrode 102 and the counter electrode 103 by the high frequency power source 107, an etchant is generated by discharge, and the aluminum on the surface of the wafer 104 can be etched. The etchant of the aluminum film after the thin oxide film on the aluminum surface has been etched is believed to be primarily activated chlorine, and the etching rate within the wafer depends on the concentration of this etchant.
従来の設置ではオリエンテーシヨンフラツトの
外周近傍はアルマイト処理されたアルミニウム電
極が顕わになつており、アルマイトはエツチヤン
トをほとんど消費しない材質であるためAlオリ
エンテーシヨンフラツトに面する周辺部へのエツ
チヤントの供給を著しく大にしていた。本発明で
は、オリエンテーシヨンフラツト近傍の支持電極
表面をエツチヤントを消費あるいは吸収する材質
で構成することにより、この部位のエツチヤント
濃度を低下せしめ、これによりオリエンテーシヨ
ンフラツトに近接する周辺部のエツチングの速度
を減じ、ウエハー内エツチングの均一性を向上さ
せることができた。 In conventional installations, anodized aluminum electrodes are exposed near the outer periphery of the orientation flat, and since alumite is a material that consumes almost no etchant, the electrodes are exposed near the outer periphery of the orientation flat. had significantly increased the supply of etchants. In the present invention, the surface of the supporting electrode near the orientation flat is made of a material that consumes or absorbs etchant, thereby reducing the etchant concentration in this area. It was possible to reduce the etching speed and improve the uniformity of etching within the wafer.
第３図は従来のアルマイト処理電極がオリエン
テーシヨンフラツト近傍で顕わな場合と本発明に
よるエツチヤントを減ずる材料（本実施例では超
高分子量ポリエチレン）のリングを敷いた場合の
ウエハー内エツチング速度分布をそのウエハー内
の測定位置と対応させて示している。実線３０１
は従来装置の場合であり、すなわち先述のＡの部
分にアルマイトが露出している場合のウエニー内
エツチング深さの均一性を示し、点線３０２は本
発明の装置の場合、すなわち部Ａの部分に超高分
子量ポリエチレンが露出している場合のウエハー
内エツチング深さの均一性を表している。
125mφウエハーの場合従来の装置ではオリエン
テーシヨンフラツトに接するウエハーの周辺から
約10mmのエツチング速度が異常に大きいのに比
し、本発見の装置ではオリエンテーシヨンフラツ
トに近接するウエハーの周辺もウエハーの他の周
辺部と略同じエツチング速度であつた。 Figure 3 shows the etching rate distribution within the wafer when the conventional anodized electrode does not appear near the orientation flat and when a ring of etchant-reducing material (ultra high molecular weight polyethylene in this example) according to the present invention is placed. are shown in correspondence with the measurement positions within the wafer. Solid line 301
302 shows the uniformity of the etching depth within the wetsuit in the case of the conventional device, that is, when the alumite is exposed in the portion A mentioned above, and the dotted line 302 shows the uniformity of etching depth in the case of the device of the present invention, that is, in the case that the alumite is exposed in the portion A mentioned above. It represents the uniformity of etching depth within the wafer when ultra-high molecular weight polyethylene is exposed.
In the case of a 125mφ wafer, with conventional equipment, the etching rate is abnormally high in the area around 10mm from the wafer's periphery that is in contact with the orientation flat, but with the device of this discovery, the etching rate is extremely high in the area around the wafer that is adjacent to the orientation flat. The etching rate was approximately the same as that of other peripheral areas of the wafer.
この結果、ウエハー内エツチングの均一性は著
しく改善されオリエンテーシヨンフラツトに近接
したウエハー周辺部の過度のオーバーエツチング
によるAlのパターンシフト量も減少した。 As a result, the uniformity of etching within the wafer was significantly improved, and the amount of Al pattern shift due to excessive overetching at the periphery of the wafer near the orientation flat was also reduced.
なお、本実施例では、超高分子量ポリエチレン
樹脂を用いたがリング状の部分１１１に用いる材
料はエツチヤントを吸収又はエツチヤントと反応
してこれを消費しやすい物質であることが必要条
件であり、他のポリオレフイン系樹脂を用いても
効果がある。カーボンを用いてもエツチヤントを
減ずる効果は大きい。ポリサルフオン又はポリア
リレートを用いてもエツチヤントを減ずる効果が
認められた。またシリコンを用いてもエツチヤン
トを減ずる効果がある。 Although ultra-high molecular weight polyethylene resin was used in this example, it is necessary that the material used for the ring-shaped portion 111 be a material that easily absorbs or reacts with the etchant and consumes it. It is also effective to use a polyolefin resin. Even if carbon is used, the effect of reducing etchants is large. The effect of reducing etchants was also observed when polysulfone or polyarylate was used. Also, the use of silicon has the effect of reducing etchants.
本発明におけるリング１１１の材質の選択は以
上の通りであるが、カバー１０５の材質はそれと
は別途に自由に選定することができる。被エツチ
ング膜の材料の如何によつて、この二つの材質の
組合せを適当にすることによつて、そのときどき
のエツチングを迅速かつ均一なものにすることが
可能となるもので、これは本発明の見逃し難い長
所である。 The selection of the material for the ring 111 in the present invention is as described above, but the material for the cover 105 can be selected separately. Depending on the material of the film to be etched, by selecting an appropriate combination of these two materials, it is possible to perform quick and uniform etching at each time, which is a feature of the present invention. This is an advantage that cannot be overlooked.
更にまた、本発明を使用するエツチング装置の
形状、構造は上記の実施例に拘束されるのではな
い。例えば支持電極を複数の短冊状にしてそれら
を面として多角柱電極を構成し、その多角柱電極
の周辺を取り囲む様にして円筒状の対向電極を設
置する構成のエツチング装置においても、その支
持電極表面に対し本発明は適用できる。 Furthermore, the shape and structure of the etching apparatus using the present invention is not limited to the embodiments described above. For example, in an etching apparatus in which a supporting electrode is formed into a plurality of strips, a polygonal columnar electrode is formed using the strips as surfaces, and a cylindrical counter electrode is installed surrounding the polygonal columnar electrode, the supporting electrode The present invention can be applied to surfaces.
本発明は以上の通りであつて、単純な構成によ
り多大の効果をあげることができるものである。 The present invention is as described above, and can achieve great effects with a simple configuration.
工業上極めて有為の発明ということができる。 It can be said to be an extremely useful invention industrially.
第１図は、本発明の実施例の平行平板型ドライ
エツチング装置の断面図。第２図は、そのウエハ
ー部分の拡大平面図。第３図は、従来の装置およ
び本発明による装置におけるエツチング速度のウ
エハー内分布を示すグラフ。
１０１……反応容器、１０２……支持電極、１
０４……ウエハー、１１２……ウエハー受け台、
１１１……リング状部材。
FIG. 1 is a sectional view of a parallel plate type dry etching apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged plan view of the wafer portion. FIG. 3 is a graph showing the intra-wafer etching rate distribution in a conventional apparatus and an apparatus according to the present invention. 101... Reaction container, 102... Support electrode, 1
04...Wafer, 112...Wafer holder,
111...Ring-shaped member.
Claims (1)
持電極上に設置し、塩素系の反応性ガスを導入し
て該ウエハー表面のアルミニウム膜にエツチング
を施すドライエツチング装置において、該支持電
極表面に該ウエハーと同心で、該ウエハーのオリ
エンテーシヨンフラツト以内の外径を有する円形
のウエハー受け台を凸設するとともに、該受け台
の外径にほぼ等しい内径を有し、該受け台とほぼ
高さが等しく、かつ該ウエハー以上の外径を有す
るリング状部材をこれに嵌装し、該リング状部材
の材質を反応性ガス、その活性種あるいはイオン
を減ずる材質で構成したことを特徴とするドライ
エツチング装置。 ２ 該リング状部材の材質がポリオレフイン系樹
脂であることを特徴とする特許請求の範囲第１項
に記載のドライエツチング装置。 ３ 該リング状部材の材質がポリサルフオン系樹
脂であることを特徴とする特許請求の範囲第１項
に記載のドライエツチング装置。 ４ 該リング状部材の材質がポリアリレート系樹
脂であることを特徴とする特許請求の範囲第１項
に記載のドライエツチング装置。 ５ 該リング状部材の材質がカーボンであること
を特徴とする特許請求の範囲第１項に記載のドラ
イエツチング装置。 ６ 該リング状部材の材質が単結晶、多結晶等の
シリコンであることを特徴とする特許請求の範囲
第１項に記載のドライエツチング装置。[Scope of Claims] 1. A dry etching device in which a wafer, which is a substrate to be processed, is placed on a supporting electrode in a reaction vessel, and a chlorine-based reactive gas is introduced to etch an aluminum film on the surface of the wafer, A circular wafer holder is provided on the surface of the support electrode concentrically with the wafer and has an outer diameter within the orientation flat of the wafer, and has an inner diameter approximately equal to the outer diameter of the holder, A ring-shaped member that is approximately the same height as the pedestal and has an outer diameter larger than the wafer is fitted therein, and the ring-shaped member is made of a material that reduces reactive gas, its active species, or ions. A dry etching device characterized by: 2. The dry etching apparatus according to claim 1, wherein the material of the ring-shaped member is polyolefin resin. 3. The dry etching apparatus according to claim 1, wherein the material of the ring-shaped member is polysulfon resin. 4. The dry etching apparatus according to claim 1, wherein the material of the ring-shaped member is polyarylate resin. 5. The dry etching apparatus according to claim 1, wherein the material of the ring-shaped member is carbon. 6. The dry etching apparatus according to claim 1, wherein the material of the ring-shaped member is monocrystalline, polycrystalline, or other silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59058602A JPS60201632A (en) | 1984-03-27 | 1984-03-27 | Dry etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59058602A JPS60201632A (en) | 1984-03-27 | 1984-03-27 | Dry etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60201632A JPS60201632A (en) | 1985-10-12 |
| JPH0523053B2 true JPH0523053B2 (en) | 1993-03-31 |
Family
ID=13089059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59058602A Granted JPS60201632A (en) | 1984-03-27 | 1984-03-27 | Dry etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60201632A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6247130A (en) * | 1985-08-27 | 1987-02-28 | Kokusai Electric Co Ltd | Reactive ion etching device |
| JPH07107899B2 (en) * | 1985-11-06 | 1995-11-15 | 日電アネルバ株式会社 | Dry etching equipment |
| JP2506389B2 (en) * | 1987-11-09 | 1996-06-12 | 富士通株式会社 | Dry etching method for mask substrate |
| JPH0730468B2 (en) * | 1988-06-09 | 1995-04-05 | 日電アネルバ株式会社 | Dry etching equipment |
| KR100281345B1 (en) | 1992-12-01 | 2001-03-02 | 조셉 제이. 스위니 | Oxide Etching Process in Electromagnetically Coupled Planner Plasma Device |
| US6899785B2 (en) * | 2001-11-05 | 2005-05-31 | International Business Machines Corporation | Method of stabilizing oxide etch and chamber performance using seasoning |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5533090A (en) * | 1979-07-19 | 1980-03-08 | Anelva Corp | Etching method |
| JPS5555530A (en) * | 1978-10-18 | 1980-04-23 | Takuo Sugano | Electrode device for plasma processor |
| JPS5582438A (en) * | 1978-12-15 | 1980-06-21 | Nec Corp | Plasma etching device |
| JPS5595327A (en) * | 1979-01-16 | 1980-07-19 | Hitachi Ltd | Reactive sputter-etching |
| JPS55154582A (en) * | 1979-05-21 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Gas plasma etching method |
| JPS57185982A (en) * | 1981-05-06 | 1982-11-16 | Perkin Elmer Corp | Plasma etching device |
-
1984
- 1984-03-27 JP JP59058602A patent/JPS60201632A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5555530A (en) * | 1978-10-18 | 1980-04-23 | Takuo Sugano | Electrode device for plasma processor |
| JPS5582438A (en) * | 1978-12-15 | 1980-06-21 | Nec Corp | Plasma etching device |
| JPS5595327A (en) * | 1979-01-16 | 1980-07-19 | Hitachi Ltd | Reactive sputter-etching |
| JPS55154582A (en) * | 1979-05-21 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Gas plasma etching method |
| JPS5533090A (en) * | 1979-07-19 | 1980-03-08 | Anelva Corp | Etching method |
| JPS57185982A (en) * | 1981-05-06 | 1982-11-16 | Perkin Elmer Corp | Plasma etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60201632A (en) | 1985-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0151769B1 (en) | Plasma etching apparatus | |
| US5015331A (en) | Method of plasma etching with parallel plate reactor having a grid | |
| JP3242166B2 (en) | Etching equipment | |
| US7767055B2 (en) | Capacitive coupling plasma processing apparatus | |
| US20010015262A1 (en) | Apparatus and method for plasma treatment | |
| JP2012507174A (en) | Process kit with low erosion sensitivity | |
| JP3808902B2 (en) | Plasma etching method | |
| JP3205878B2 (en) | Dry etching equipment | |
| US5087341A (en) | Dry etching apparatus and method | |
| US5209803A (en) | Parallel plate reactor and method of use | |
| JPH0523053B2 (en) | ||
| JP2001110777A (en) | Method and device for processing plasma | |
| JP4456218B2 (en) | Plasma processing equipment | |
| US7406925B2 (en) | Plasma processing method and apparatus | |
| JPH07254588A (en) | Plasma surface processing equipment | |
| JP3113836B2 (en) | Plasma processing equipment | |
| JPH0642331Y2 (en) | Dry etching equipment | |
| JPS60198821A (en) | Dry etching device | |
| JP2002373888A (en) | Plasma processing system and plasma processing method | |
| JPH0230125A (en) | Plasma treatment device | |
| JP3028364B2 (en) | Plasma processing apparatus and plasma processing method | |
| JPS59139628A (en) | Dry etching device | |
| JPH01175738A (en) | Dry-etching equipment | |
| KR100272278B1 (en) | Dry etcher | |
| KR20000013432A (en) | Etching apparatus for fabricating semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |