JPS5595327A - Reactive sputter-etching - Google Patents
Reactive sputter-etchingInfo
- Publication number
- JPS5595327A JPS5595327A JP218579A JP218579A JPS5595327A JP S5595327 A JPS5595327 A JP S5595327A JP 218579 A JP218579 A JP 218579A JP 218579 A JP218579 A JP 218579A JP S5595327 A JPS5595327 A JP S5595327A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etched
- plate
- gas
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To etch an SiO2 or PSG film placed in the center of a hole made in a thin polyester plate with a high rate of selection by the use of a C4F8 gas and/or a mixed gas of C4F8 and He.
CONSTITUTION: Material 4 to be etched which consists of an Si substrate with an SiO2 or PSG film formed on the substrate is placed on a flat electrode 3, and a thin polyester plate 6 is provided in such a way that it surrounds the material. When the diameter of the material to be etched is d mm, that of the plate 6 is to be larger than d by 10W40mm, and if the plural number of the materials are simultaneously etched, a gap of wider than 10mm is provided between the adjacent holes. If the hole dimension of the plate 6 is less than the specified, the progress of etching is impeded because a product of polymerization reaction is accumulated on the surface of the material to be etched, and if the dimension is larger than the specified, the effect of improving an etching speed ratio is lowered. If reactive sputter-etching is made using a C4F8 gas or a mixed gas of C4F8 and He, the etching speed ratio reaches 15 or over, and it is thus possible to make a minute process.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP218579A JPS5595327A (en) | 1979-01-16 | 1979-01-16 | Reactive sputter-etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP218579A JPS5595327A (en) | 1979-01-16 | 1979-01-16 | Reactive sputter-etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5595327A true JPS5595327A (en) | 1980-07-19 |
Family
ID=11522298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP218579A Pending JPS5595327A (en) | 1979-01-16 | 1979-01-16 | Reactive sputter-etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5595327A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56169776A (en) * | 1980-06-03 | 1981-12-26 | Tokyo Ohka Kogyo Co Ltd | Selective dry etching method |
| JPS5843522A (en) * | 1981-08-24 | 1983-03-14 | ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド | Method of etching layer on wafer |
| JPS60201632A (en) * | 1984-03-27 | 1985-10-12 | Anelva Corp | Dry etching apparatus |
| JPS6276725A (en) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | Reactive plasma etching apparatus |
| JP2006111525A (en) * | 2004-10-09 | 2006-04-27 | Schott Ag | Method for fine structuring of plate glass base body |
| USRE39895E1 (en) | 1994-06-13 | 2007-10-23 | Renesas Technology Corp. | Semiconductor integrated circuit arrangement fabrication method |
-
1979
- 1979-01-16 JP JP218579A patent/JPS5595327A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56169776A (en) * | 1980-06-03 | 1981-12-26 | Tokyo Ohka Kogyo Co Ltd | Selective dry etching method |
| JPS6328995B2 (en) * | 1980-06-03 | 1988-06-10 | Tokyo Ohka Kogyo Co Ltd | |
| JPS5843522A (en) * | 1981-08-24 | 1983-03-14 | ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド | Method of etching layer on wafer |
| JPH0462170B2 (en) * | 1981-08-24 | 1992-10-05 | Ei Teii Ando Teii Tekunorojiizu Inc | |
| JPS60201632A (en) * | 1984-03-27 | 1985-10-12 | Anelva Corp | Dry etching apparatus |
| JPH0523053B2 (en) * | 1984-03-27 | 1993-03-31 | Anelva Corp | |
| JPS6276725A (en) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | Reactive plasma etching apparatus |
| USRE39895E1 (en) | 1994-06-13 | 2007-10-23 | Renesas Technology Corp. | Semiconductor integrated circuit arrangement fabrication method |
| JP2006111525A (en) * | 2004-10-09 | 2006-04-27 | Schott Ag | Method for fine structuring of plate glass base body |
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