JPS56169776A - Selective dry etching method - Google Patents

Selective dry etching method

Info

Publication number
JPS56169776A
JPS56169776A JP7368980A JP7368980A JPS56169776A JP S56169776 A JPS56169776 A JP S56169776A JP 7368980 A JP7368980 A JP 7368980A JP 7368980 A JP7368980 A JP 7368980A JP S56169776 A JPS56169776 A JP S56169776A
Authority
JP
Japan
Prior art keywords
gas
etching
silicon
inert gas
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7368980A
Other languages
Japanese (ja)
Other versions
JPS6328995B2 (en
Inventor
Isamu Hijikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP7368980A priority Critical patent/JPS56169776A/en
Publication of JPS56169776A publication Critical patent/JPS56169776A/en
Publication of JPS6328995B2 publication Critical patent/JPS6328995B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To enable speedy and stable selective etching of silicon oxide rather than silicon, by mixing inert gas in fluorocarbon gas to be used for dry etching.
CONSTITUTION: Fluorocarbon gas such as CF4, C2F6, C3F8 or the like gas, and inert gas such as He, Ar or the like gas are introduced into a parallel flat plate-type plasma etching device maintained in vacuo at a flow ratio of 1:1W1:100. The gaseous mixture is converted to a plasma state, and used for etching a silicon oxide layer on a silicon wefar. The mixing ratio of the fluorocarbon gas to the inert gas is in a wide permissible range, so that etching can be done under a stable condition even if the mixing ratio of the gaseous changes to some extent.
COPYRIGHT: (C)1981,JPO&Japio
JP7368980A 1980-06-03 1980-06-03 Selective dry etching method Granted JPS56169776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7368980A JPS56169776A (en) 1980-06-03 1980-06-03 Selective dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7368980A JPS56169776A (en) 1980-06-03 1980-06-03 Selective dry etching method

Publications (2)

Publication Number Publication Date
JPS56169776A true JPS56169776A (en) 1981-12-26
JPS6328995B2 JPS6328995B2 (en) 1988-06-10

Family

ID=13525425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7368980A Granted JPS56169776A (en) 1980-06-03 1980-06-03 Selective dry etching method

Country Status (1)

Country Link
JP (1) JPS56169776A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748235A (en) * 1980-07-24 1982-03-19 Fujitsu Ltd Manufacture of semiconductor device
JPS61182230A (en) * 1985-01-31 1986-08-14 モトローラ・インコーポレーテツド Reactive sputter cleaning for semiconductor wafer
EP0528655A2 (en) * 1991-08-16 1993-02-24 Hitachi, Ltd. Dry-etching method and apparatus
CN1036868C (en) * 1991-03-22 1997-12-31 株式会社岛津制作所 Dry etching method and its application
CN1038349C (en) * 1992-11-09 1998-05-13 国际商业机器公司 New device and method for accurate etching and removal of thin film
EP1099776A1 (en) * 1999-11-09 2001-05-16 Applied Materials, Inc. Plasma cleaning step in a salicide process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595327A (en) * 1979-01-16 1980-07-19 Hitachi Ltd Reactive sputter-etching

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595327A (en) * 1979-01-16 1980-07-19 Hitachi Ltd Reactive sputter-etching

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748235A (en) * 1980-07-24 1982-03-19 Fujitsu Ltd Manufacture of semiconductor device
JPS61182230A (en) * 1985-01-31 1986-08-14 モトローラ・インコーポレーテツド Reactive sputter cleaning for semiconductor wafer
CN1036868C (en) * 1991-03-22 1997-12-31 株式会社岛津制作所 Dry etching method and its application
EP0528655A2 (en) * 1991-08-16 1993-02-24 Hitachi, Ltd. Dry-etching method and apparatus
CN1038349C (en) * 1992-11-09 1998-05-13 国际商业机器公司 New device and method for accurate etching and removal of thin film
EP1099776A1 (en) * 1999-11-09 2001-05-16 Applied Materials, Inc. Plasma cleaning step in a salicide process

Also Published As

Publication number Publication date
JPS6328995B2 (en) 1988-06-10

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