JPS56169776A - Selective dry etching method - Google Patents
Selective dry etching methodInfo
- Publication number
- JPS56169776A JPS56169776A JP7368980A JP7368980A JPS56169776A JP S56169776 A JPS56169776 A JP S56169776A JP 7368980 A JP7368980 A JP 7368980A JP 7368980 A JP7368980 A JP 7368980A JP S56169776 A JPS56169776 A JP S56169776A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- silicon
- inert gas
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To enable speedy and stable selective etching of silicon oxide rather than silicon, by mixing inert gas in fluorocarbon gas to be used for dry etching.
CONSTITUTION: Fluorocarbon gas such as CF4, C2F6, C3F8 or the like gas, and inert gas such as He, Ar or the like gas are introduced into a parallel flat plate-type plasma etching device maintained in vacuo at a flow ratio of 1:1W1:100. The gaseous mixture is converted to a plasma state, and used for etching a silicon oxide layer on a silicon wefar. The mixing ratio of the fluorocarbon gas to the inert gas is in a wide permissible range, so that etching can be done under a stable condition even if the mixing ratio of the gaseous changes to some extent.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7368980A JPS56169776A (en) | 1980-06-03 | 1980-06-03 | Selective dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7368980A JPS56169776A (en) | 1980-06-03 | 1980-06-03 | Selective dry etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56169776A true JPS56169776A (en) | 1981-12-26 |
JPS6328995B2 JPS6328995B2 (en) | 1988-06-10 |
Family
ID=13525425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7368980A Granted JPS56169776A (en) | 1980-06-03 | 1980-06-03 | Selective dry etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56169776A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748235A (en) * | 1980-07-24 | 1982-03-19 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS61182230A (en) * | 1985-01-31 | 1986-08-14 | モトローラ・インコーポレーテツド | Reactive sputter cleaning for semiconductor wafer |
EP0528655A2 (en) * | 1991-08-16 | 1993-02-24 | Hitachi, Ltd. | Dry-etching method and apparatus |
CN1036868C (en) * | 1991-03-22 | 1997-12-31 | 株式会社岛津制作所 | Dry etching method and its application |
CN1038349C (en) * | 1992-11-09 | 1998-05-13 | 国际商业机器公司 | New device and method for accurate etching and removal of thin film |
EP1099776A1 (en) * | 1999-11-09 | 2001-05-16 | Applied Materials, Inc. | Plasma cleaning step in a salicide process |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595327A (en) * | 1979-01-16 | 1980-07-19 | Hitachi Ltd | Reactive sputter-etching |
-
1980
- 1980-06-03 JP JP7368980A patent/JPS56169776A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595327A (en) * | 1979-01-16 | 1980-07-19 | Hitachi Ltd | Reactive sputter-etching |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748235A (en) * | 1980-07-24 | 1982-03-19 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS61182230A (en) * | 1985-01-31 | 1986-08-14 | モトローラ・インコーポレーテツド | Reactive sputter cleaning for semiconductor wafer |
CN1036868C (en) * | 1991-03-22 | 1997-12-31 | 株式会社岛津制作所 | Dry etching method and its application |
EP0528655A2 (en) * | 1991-08-16 | 1993-02-24 | Hitachi, Ltd. | Dry-etching method and apparatus |
CN1038349C (en) * | 1992-11-09 | 1998-05-13 | 国际商业机器公司 | New device and method for accurate etching and removal of thin film |
EP1099776A1 (en) * | 1999-11-09 | 2001-05-16 | Applied Materials, Inc. | Plasma cleaning step in a salicide process |
Also Published As
Publication number | Publication date |
---|---|
JPS6328995B2 (en) | 1988-06-10 |
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