JPS5658972A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS5658972A
JPS5658972A JP13343579A JP13343579A JPS5658972A JP S5658972 A JPS5658972 A JP S5658972A JP 13343579 A JP13343579 A JP 13343579A JP 13343579 A JP13343579 A JP 13343579A JP S5658972 A JPS5658972 A JP S5658972A
Authority
JP
Japan
Prior art keywords
film
lower electrode
selection rate
mixed gas
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13343579A
Other languages
Japanese (ja)
Inventor
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13343579A priority Critical patent/JPS5658972A/en
Publication of JPS5658972A publication Critical patent/JPS5658972A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To make it possible to improve the selection rate of an oxidized film over broad gas mixing range by specifying the internal pressure of a device equipped with parallel plate electrodes when introducing the mixed gas of CF4 and H2 to the device and dry-etching an SiO2 film.
CONSTITUTION: In chamber 1, mutually parallel upper electrodes 2 and lower electrode 3 equipped with cooling pipe 4 are arranged and ring-shaped introduction pipe 6 introducing the mixed gas of CF4 and H2 is inserted over lower electrode 3 to dry-etch a body, containing SiO2, mounted on electrode 3 to be etched by the mixed gas of CF4 and H2. In this case, the pressure in chamber 1 should be specified below 10-4 Torr. Consequently, the selection rate of an oxidized film is improved over the range by the mixing ratio of carbon fluoride type gas to hydrogen. In addition, the etching selection rate of the SiO2 film can further be improved by a device having lower electrode 3 covered with an organic resin film such as polyester film.
COPYRIGHT: (C)1981,JPO&Japio
JP13343579A 1979-10-16 1979-10-16 Dry etching method Pending JPS5658972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13343579A JPS5658972A (en) 1979-10-16 1979-10-16 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13343579A JPS5658972A (en) 1979-10-16 1979-10-16 Dry etching method

Publications (1)

Publication Number Publication Date
JPS5658972A true JPS5658972A (en) 1981-05-22

Family

ID=15104700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13343579A Pending JPS5658972A (en) 1979-10-16 1979-10-16 Dry etching method

Country Status (1)

Country Link
JP (1) JPS5658972A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100683A (en) * 1981-12-12 1983-06-15 Nippon Telegr & Teleph Corp <Ntt> Plasma etching method
JPS6224627A (en) * 1985-07-25 1987-02-02 Sony Corp Dry etching method
JP2016039309A (en) * 2014-08-08 2016-03-22 東京エレクトロン株式会社 Method for etching multilayered film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100683A (en) * 1981-12-12 1983-06-15 Nippon Telegr & Teleph Corp <Ntt> Plasma etching method
JPH0121230B2 (en) * 1981-12-12 1989-04-20 Nippon Telegraph & Telephone
JPS6224627A (en) * 1985-07-25 1987-02-02 Sony Corp Dry etching method
JP2016039309A (en) * 2014-08-08 2016-03-22 東京エレクトロン株式会社 Method for etching multilayered film

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