JPS55134173A - Etching method for aluminum or aluminum base alloy - Google Patents

Etching method for aluminum or aluminum base alloy

Info

Publication number
JPS55134173A
JPS55134173A JP3987379A JP3987379A JPS55134173A JP S55134173 A JPS55134173 A JP S55134173A JP 3987379 A JP3987379 A JP 3987379A JP 3987379 A JP3987379 A JP 3987379A JP S55134173 A JPS55134173 A JP S55134173A
Authority
JP
Japan
Prior art keywords
aluminum
base alloy
gas
cpd
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3987379A
Other languages
Japanese (ja)
Inventor
Masatoshi Oda
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3987379A priority Critical patent/JPS55134173A/en
Publication of JPS55134173A publication Critical patent/JPS55134173A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To etch Al film and Al base alloy film at a excellent reproducibility and in a good yield, by using a gas contg. H2 and a cpd. having at least Cl as a component for low-temp. gas plasma.
CONSTITUTION: In etching Al film or Al base alloy film, a mixed gas of H2 and one or more cpds. having Cl as a component is used as the gas to be made into plasmatic state. For the cpd. (A) having Cl as a component is used, e.g., CCl4, PCl3, BCl3, CCl2F2, Cl2, etc. Mixing ratio of H2 with the cpd. (A) is pref. not higher than 50% of the total gas flow rate. This method is suitable for the automation and labor saving of etching process.
COPYRIGHT: (C)1980,JPO&Japio
JP3987379A 1979-04-04 1979-04-04 Etching method for aluminum or aluminum base alloy Pending JPS55134173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3987379A JPS55134173A (en) 1979-04-04 1979-04-04 Etching method for aluminum or aluminum base alloy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3987379A JPS55134173A (en) 1979-04-04 1979-04-04 Etching method for aluminum or aluminum base alloy

Publications (1)

Publication Number Publication Date
JPS55134173A true JPS55134173A (en) 1980-10-18

Family

ID=12565091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3987379A Pending JPS55134173A (en) 1979-04-04 1979-04-04 Etching method for aluminum or aluminum base alloy

Country Status (1)

Country Link
JP (1) JPS55134173A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1982003636A1 (en) * 1981-04-15 1982-10-28 Mizutani Tatsumi Process for dry-etching aluminum or its alloy
US4370196A (en) * 1982-03-25 1983-01-25 Rca Corporation Anisotropic etching of aluminum
JPS6047423A (en) * 1983-08-25 1985-03-14 Nippon Telegr & Teleph Corp <Ntt> Method for pattern formation
JPS63205915A (en) * 1987-02-23 1988-08-25 Tokuda Seisakusho Ltd Plasma etching method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135843A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Etching process for al and al alloy

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135843A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Etching process for al and al alloy

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1982003636A1 (en) * 1981-04-15 1982-10-28 Mizutani Tatsumi Process for dry-etching aluminum or its alloy
US4511429A (en) * 1981-04-15 1985-04-16 Hitachi, Ltd. Process for dry etching of aluminum and its alloy
US4370196A (en) * 1982-03-25 1983-01-25 Rca Corporation Anisotropic etching of aluminum
JPS6047423A (en) * 1983-08-25 1985-03-14 Nippon Telegr & Teleph Corp <Ntt> Method for pattern formation
JPS63205915A (en) * 1987-02-23 1988-08-25 Tokuda Seisakusho Ltd Plasma etching method

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