JPS5491059A - Etching method for phosphorus glass by plasma etching - Google Patents
Etching method for phosphorus glass by plasma etchingInfo
- Publication number
- JPS5491059A JPS5491059A JP15874177A JP15874177A JPS5491059A JP S5491059 A JPS5491059 A JP S5491059A JP 15874177 A JP15874177 A JP 15874177A JP 15874177 A JP15874177 A JP 15874177A JP S5491059 A JPS5491059 A JP S5491059A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- cbrf
- phosphorus glass
- selectively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To etch PSG selectively by using mixed gas of CF4 or CBrF3 gas and vapor.
CONSTITUTION: By being dissociated, CHF3 gas used for plasma etching becomes CF×3+H, which changes into CF×2+F× by being excited. Because of H+F× → HF, etching by the use of CHF3 gas will not cause Si etching by F× gas when CF4 or CBrF3 gas are used, thereby making it possible to etch PSG selectively. For the purpose, H obtained through the dissociation of H2O is supplied sufficiently to F× produced by dissociating CF4 or CBrF3 in order to produce HF, so that PSG can be etched selectively.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15874177A JPS5491059A (en) | 1977-12-28 | 1977-12-28 | Etching method for phosphorus glass by plasma etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15874177A JPS5491059A (en) | 1977-12-28 | 1977-12-28 | Etching method for phosphorus glass by plasma etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5491059A true JPS5491059A (en) | 1979-07-19 |
Family
ID=15678313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15874177A Pending JPS5491059A (en) | 1977-12-28 | 1977-12-28 | Etching method for phosphorus glass by plasma etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5491059A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59119723A (en) * | 1982-12-27 | 1984-07-11 | Toshiba Corp | Manufacture of semiconductor device |
JPS6446931A (en) * | 1987-08-17 | 1989-02-21 | Fujitsu Ltd | Etching of silicon trench |
WO1991003841A1 (en) * | 1989-09-09 | 1991-03-21 | Tadahiro Ohmi | Element, method of fabricating the same, semiconductor element and method of fabricating the same |
WO2008025354A3 (en) * | 2006-09-01 | 2008-09-18 | Fraunhofer Ges Forschung | Method for selective plasmochemical dry-etching of phosphosilicate glass deposited on surfaces of silicon wafers |
-
1977
- 1977-12-28 JP JP15874177A patent/JPS5491059A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59119723A (en) * | 1982-12-27 | 1984-07-11 | Toshiba Corp | Manufacture of semiconductor device |
JPH0352206B2 (en) * | 1982-12-27 | 1991-08-09 | Tokyo Shibaura Electric Co | |
JPS6446931A (en) * | 1987-08-17 | 1989-02-21 | Fujitsu Ltd | Etching of silicon trench |
WO1991003841A1 (en) * | 1989-09-09 | 1991-03-21 | Tadahiro Ohmi | Element, method of fabricating the same, semiconductor element and method of fabricating the same |
WO2008025354A3 (en) * | 2006-09-01 | 2008-09-18 | Fraunhofer Ges Forschung | Method for selective plasmochemical dry-etching of phosphosilicate glass deposited on surfaces of silicon wafers |
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