JPS5491059A - Etching method for phosphorus glass by plasma etching - Google Patents

Etching method for phosphorus glass by plasma etching

Info

Publication number
JPS5491059A
JPS5491059A JP15874177A JP15874177A JPS5491059A JP S5491059 A JPS5491059 A JP S5491059A JP 15874177 A JP15874177 A JP 15874177A JP 15874177 A JP15874177 A JP 15874177A JP S5491059 A JPS5491059 A JP S5491059A
Authority
JP
Japan
Prior art keywords
etching
gas
cbrf
phosphorus glass
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15874177A
Other languages
Japanese (ja)
Inventor
Goro Shoji
Atsushi Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15874177A priority Critical patent/JPS5491059A/en
Publication of JPS5491059A publication Critical patent/JPS5491059A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To etch PSG selectively by using mixed gas of CF4 or CBrF3 gas and vapor.
CONSTITUTION: By being dissociated, CHF3 gas used for plasma etching becomes CF×3+H, which changes into CF×2+F× by being excited. Because of H+F× → HF, etching by the use of CHF3 gas will not cause Si etching by F× gas when CF4 or CBrF3 gas are used, thereby making it possible to etch PSG selectively. For the purpose, H obtained through the dissociation of H2O is supplied sufficiently to F× produced by dissociating CF4 or CBrF3 in order to produce HF, so that PSG can be etched selectively.
COPYRIGHT: (C)1979,JPO&Japio
JP15874177A 1977-12-28 1977-12-28 Etching method for phosphorus glass by plasma etching Pending JPS5491059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15874177A JPS5491059A (en) 1977-12-28 1977-12-28 Etching method for phosphorus glass by plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15874177A JPS5491059A (en) 1977-12-28 1977-12-28 Etching method for phosphorus glass by plasma etching

Publications (1)

Publication Number Publication Date
JPS5491059A true JPS5491059A (en) 1979-07-19

Family

ID=15678313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15874177A Pending JPS5491059A (en) 1977-12-28 1977-12-28 Etching method for phosphorus glass by plasma etching

Country Status (1)

Country Link
JP (1) JPS5491059A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119723A (en) * 1982-12-27 1984-07-11 Toshiba Corp Manufacture of semiconductor device
JPS6446931A (en) * 1987-08-17 1989-02-21 Fujitsu Ltd Etching of silicon trench
WO1991003841A1 (en) * 1989-09-09 1991-03-21 Tadahiro Ohmi Element, method of fabricating the same, semiconductor element and method of fabricating the same
WO2008025354A3 (en) * 2006-09-01 2008-09-18 Fraunhofer Ges Forschung Method for selective plasmochemical dry-etching of phosphosilicate glass deposited on surfaces of silicon wafers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119723A (en) * 1982-12-27 1984-07-11 Toshiba Corp Manufacture of semiconductor device
JPH0352206B2 (en) * 1982-12-27 1991-08-09 Tokyo Shibaura Electric Co
JPS6446931A (en) * 1987-08-17 1989-02-21 Fujitsu Ltd Etching of silicon trench
WO1991003841A1 (en) * 1989-09-09 1991-03-21 Tadahiro Ohmi Element, method of fabricating the same, semiconductor element and method of fabricating the same
WO2008025354A3 (en) * 2006-09-01 2008-09-18 Fraunhofer Ges Forschung Method for selective plasmochemical dry-etching of phosphosilicate glass deposited on surfaces of silicon wafers

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