JPS644482A - High-selectivity dry etching method for oxide film on silicon - Google Patents

High-selectivity dry etching method for oxide film on silicon

Info

Publication number
JPS644482A
JPS644482A JP16042587A JP16042587A JPS644482A JP S644482 A JPS644482 A JP S644482A JP 16042587 A JP16042587 A JP 16042587A JP 16042587 A JP16042587 A JP 16042587A JP S644482 A JPS644482 A JP S644482A
Authority
JP
Japan
Prior art keywords
oxide film
silicon
etching
dry etching
ch2f2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16042587A
Other languages
Japanese (ja)
Other versions
JPH0253513B2 (en
Inventor
Tetsuhiko Sanpei
Toshihiko Fukuyama
Akira Hasegawa
Kazuo Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Japan Inc
Original Assignee
Applied Materials Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Japan Inc filed Critical Applied Materials Japan Inc
Priority to JP16042587A priority Critical patent/JPS644482A/en
Publication of JPS644482A publication Critical patent/JPS644482A/en
Publication of JPH0253513B2 publication Critical patent/JPH0253513B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To carry out the high-selectivity dry etching of an oxide film on silicon at high etch rate, by performing the etching of an oxide film by using a gaseous mixture of CHF3, CH2F2, and O2 as an etching gas. CONSTITUTION:An etching gas is introduced into a reaction chamber and plasma is produced by means of high-frequency wave, by which the etching of an oxide film on silicon is performed. In the above dry etching method, a gaseous mixture of CH3, CH2F2, and O2 is used as the above etching gas. It is preferable that the composition of this gaseous mixture is regulated so that the ratio of CHF3 to CH2F2 is about 1:1, and it is also preferable that O2 content is as low as possible. In the gas with the above composition, the number of liberated and excited F atoms is reduced and attack on silicon is reduced. By this method, the high-selectivity dry etching of the oxide film on silicon is made possible without causing too much reduction in etch rate to the oxide film.
JP16042587A 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon Granted JPS644482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16042587A JPS644482A (en) 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16042587A JPS644482A (en) 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon

Publications (2)

Publication Number Publication Date
JPS644482A true JPS644482A (en) 1989-01-09
JPH0253513B2 JPH0253513B2 (en) 1990-11-16

Family

ID=15714649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16042587A Granted JPS644482A (en) 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon

Country Status (1)

Country Link
JP (1) JPS644482A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0945896A4 (en) * 1996-10-11 1999-09-29

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0945896A4 (en) * 1996-10-11 1999-09-29
EP0945896A1 (en) * 1996-10-11 1999-09-29 Tokyo Electron Limited Plasma etching method

Also Published As

Publication number Publication date
JPH0253513B2 (en) 1990-11-16

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees