JPS6459820A - Dry etching - Google Patents

Dry etching

Info

Publication number
JPS6459820A
JPS6459820A JP21529387A JP21529387A JPS6459820A JP S6459820 A JPS6459820 A JP S6459820A JP 21529387 A JP21529387 A JP 21529387A JP 21529387 A JP21529387 A JP 21529387A JP S6459820 A JPS6459820 A JP S6459820A
Authority
JP
Japan
Prior art keywords
reactive gas
cassette
dry etching
succession
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21529387A
Other languages
Japanese (ja)
Inventor
Hiroyuki Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuda Seisakusho Co Ltd
Original Assignee
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuda Seisakusho Co Ltd filed Critical Tokuda Seisakusho Co Ltd
Priority to JP21529387A priority Critical patent/JPS6459820A/en
Publication of JPS6459820A publication Critical patent/JPS6459820A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enhance an etching rate of a material to be etched and to achieve an etching operation of high selectivity by adding C2H4 to a reactive gas. CONSTITUTION:A water where a pattern has been formed is inserted into a cassette 8 and installed; after that, the cassette is installed on a support stand 3 of a chamber 1. In succession, a reactive gas as well as CF4, O2 and N2 under a condition of 100, 50 and 50 SC CM, respectively, are supplied to a plasma chamber; C2H4 is supplied in a ratio of 10-30% with reference to said CF4, O2 and N2; the reactive gas is excited by microwaves. In succession, an active species to which said C2H4 has been added is introduced into the vacuum chamber 1; the cassette 8 is turned slowly; the wafer is subjected to a chemical dry etching operation. Because C2H4 is added to the reactive gas, an etch rate of a material to be etched is enhanced; a selective ratio to a substrate can be increased.
JP21529387A 1987-08-31 1987-08-31 Dry etching Pending JPS6459820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21529387A JPS6459820A (en) 1987-08-31 1987-08-31 Dry etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21529387A JPS6459820A (en) 1987-08-31 1987-08-31 Dry etching

Publications (1)

Publication Number Publication Date
JPS6459820A true JPS6459820A (en) 1989-03-07

Family

ID=16669921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21529387A Pending JPS6459820A (en) 1987-08-31 1987-08-31 Dry etching

Country Status (1)

Country Link
JP (1) JPS6459820A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000067308A1 (en) 1999-05-05 2000-11-09 Lam Research Corporation Techniques for etching a low capacitance dielectric layer
WO2002065530A3 (en) * 2001-02-12 2003-05-15 Lam Res Corp Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
US6777344B2 (en) 2001-02-12 2004-08-17 Lam Research Corporation Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
JP2007134070A (en) * 2005-11-08 2007-05-31 Toshiba Corp Induction heating cooking device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138237A (en) * 1979-04-13 1980-10-28 Fujitsu Ltd Manufacture of semiconductor device
JPS5934633A (en) * 1982-08-23 1984-02-25 Toshiba Corp Manufacture of semiconductor device
JPS59172234A (en) * 1983-03-18 1984-09-28 Toshiba Corp Controlling method of taper angle according to gas plasma
JPS61127877A (en) * 1984-11-27 1986-06-16 Tokuda Seisakusho Ltd Dry etching device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138237A (en) * 1979-04-13 1980-10-28 Fujitsu Ltd Manufacture of semiconductor device
JPS5934633A (en) * 1982-08-23 1984-02-25 Toshiba Corp Manufacture of semiconductor device
JPS59172234A (en) * 1983-03-18 1984-09-28 Toshiba Corp Controlling method of taper angle according to gas plasma
JPS61127877A (en) * 1984-11-27 1986-06-16 Tokuda Seisakusho Ltd Dry etching device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6696366B1 (en) 1998-08-17 2004-02-24 Lam Research Corporation Technique for etching a low capacitance dielectric layer
WO2000067308A1 (en) 1999-05-05 2000-11-09 Lam Research Corporation Techniques for etching a low capacitance dielectric layer
KR100778259B1 (en) * 1999-05-05 2007-11-22 램 리써치 코포레이션 Techniques for etching a low capacitance dielectric layer
WO2002065530A3 (en) * 2001-02-12 2003-05-15 Lam Res Corp Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
US6620733B2 (en) 2001-02-12 2003-09-16 Lam Research Corporation Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
US6777344B2 (en) 2001-02-12 2004-08-17 Lam Research Corporation Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
JP2007134070A (en) * 2005-11-08 2007-05-31 Toshiba Corp Induction heating cooking device

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