JPS57114235A - Cleaning of semiconductor substrate - Google Patents

Cleaning of semiconductor substrate

Info

Publication number
JPS57114235A
JPS57114235A JP77781A JP77781A JPS57114235A JP S57114235 A JPS57114235 A JP S57114235A JP 77781 A JP77781 A JP 77781A JP 77781 A JP77781 A JP 77781A JP S57114235 A JPS57114235 A JP S57114235A
Authority
JP
Japan
Prior art keywords
etching
gas
plasma etching
plasma
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP77781A
Other languages
Japanese (ja)
Inventor
Katsuya Okumura
Fumio Fukino
Toru Watanabe
Yasuharu Suzuki
Haruo Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP77781A priority Critical patent/JPS57114235A/en
Publication of JPS57114235A publication Critical patent/JPS57114235A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain the clean surface of a semiconductor by a method wherein after gas plasma etching with halogen element is performed on a film of the semiconductor material, it is transferred in a plasma etching device in which an electric discharge chamber and an accommodating place of the semiconductors to be etched are isolated, and gas plasma etching is performed. CONSTITUTION:When etching with mixed gas of CF4 and H2 is performed on the SiO2 film 12 on the Si substrate 11 making a resist pattern 17 as the mask, a C-Fx contamination layer 14 is formed in the surface. It is accommodated in the plasma etching device in which the discharge chamber 21 of etching gas and the accommodating place of the articles to be etched are isolated, CF4 and O2 are introduced, dissociation with microwave electric power is performed, and plasma is formed to perform etching. Accordingly, damage of the resist layer is not generated, the finishing point of etching can be monitored, and the clean Si surface can be obtained.
JP77781A 1981-01-08 1981-01-08 Cleaning of semiconductor substrate Pending JPS57114235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP77781A JPS57114235A (en) 1981-01-08 1981-01-08 Cleaning of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP77781A JPS57114235A (en) 1981-01-08 1981-01-08 Cleaning of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS57114235A true JPS57114235A (en) 1982-07-16

Family

ID=11483126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP77781A Pending JPS57114235A (en) 1981-01-08 1981-01-08 Cleaning of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS57114235A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6353928A (en) * 1986-08-22 1988-03-08 Anelva Corp Dry etching
JPS63128720A (en) * 1986-11-19 1988-06-01 Nec Corp Reactive ion etching method
JPH01245524A (en) * 1988-03-28 1989-09-29 Toshiba Corp Method and device for manufacturing semiconductor device
JPH01298181A (en) * 1988-05-25 1989-12-01 Hitachi Ltd Dry etching method
JPH04229621A (en) * 1990-07-09 1992-08-19 Mitsubishi Electric Corp Method of processing surface of semiconductor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122129A (en) * 1980-02-28 1981-09-25 Nec Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122129A (en) * 1980-02-28 1981-09-25 Nec Corp Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6353928A (en) * 1986-08-22 1988-03-08 Anelva Corp Dry etching
JPS63128720A (en) * 1986-11-19 1988-06-01 Nec Corp Reactive ion etching method
JPH01245524A (en) * 1988-03-28 1989-09-29 Toshiba Corp Method and device for manufacturing semiconductor device
JPH01298181A (en) * 1988-05-25 1989-12-01 Hitachi Ltd Dry etching method
JPH04229621A (en) * 1990-07-09 1992-08-19 Mitsubishi Electric Corp Method of processing surface of semiconductor substrate

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