JPS57202744A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57202744A
JPS57202744A JP56087797A JP8779781A JPS57202744A JP S57202744 A JPS57202744 A JP S57202744A JP 56087797 A JP56087797 A JP 56087797A JP 8779781 A JP8779781 A JP 8779781A JP S57202744 A JPS57202744 A JP S57202744A
Authority
JP
Japan
Prior art keywords
plasma
substrate
film
ions
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56087797A
Other languages
Japanese (ja)
Inventor
Haruhiko Abe
Hideaki Arima
Tadashi Nishimura
Masahiro Yoneda
Hayaaki Fukumoto
Katsuhiro Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56087797A priority Critical patent/JPS57202744A/en
Publication of JPS57202744A publication Critical patent/JPS57202744A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Abstract

PURPOSE:To obtain an Si3N4 film of good quality at low temperatures, by means of plasma nitrification with a combination of plasma etching. CONSTITUTION:CF4 is induced in a tank 2 to keep at one Tol. Plasma is produced by high-frequency power. An SiO2 film on an Si substrate 1 is etched with F radicals and F ions in the plasma, and a clean Si surface is exposed. High- frequency power is cut off, and N2 or NH3 of high impurity is exchanged to keep at 0.5 Tol. Plasma is produced by high-frequency power again. Putting N radicals and N ions on the heated, clean substrate 1 causes a reaction to form Si3N4. Higher negative voltage than plasma voltage is applied to the Si substrate 1 from a power supply 9. The Si surface causes a reaction by accelerated N ions. The production speed of Si3N4 film is controlled by plasma generation power, gas pressure, substrate 1 temperature and substrate 1 voltage. The film of very high quality can be formed, and its thickness can be controlled very accurately.
JP56087797A 1981-06-05 1981-06-05 Manufacture of semiconductor device Pending JPS57202744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56087797A JPS57202744A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56087797A JPS57202744A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57202744A true JPS57202744A (en) 1982-12-11

Family

ID=13924963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56087797A Pending JPS57202744A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57202744A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169142A (en) * 1983-03-16 1984-09-25 Toshiba Corp Forming method for nitrided film
JPS59169143A (en) * 1983-03-16 1984-09-25 Toshiba Corp Device for manufacturing nitrided film
JPS625641A (en) * 1985-04-09 1987-01-12 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Low temperature plasma nitriding and application of nitride film formed therein
EP0354056A2 (en) * 1988-08-05 1990-02-07 Semiconductor Energy Laboratory Co., Ltd. Coated electric devices and methods of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169142A (en) * 1983-03-16 1984-09-25 Toshiba Corp Forming method for nitrided film
JPS59169143A (en) * 1983-03-16 1984-09-25 Toshiba Corp Device for manufacturing nitrided film
JPS625641A (en) * 1985-04-09 1987-01-12 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Low temperature plasma nitriding and application of nitride film formed therein
EP0354056A2 (en) * 1988-08-05 1990-02-07 Semiconductor Energy Laboratory Co., Ltd. Coated electric devices and methods of manufacturing the same

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