JPS6428924A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6428924A JPS6428924A JP18343087A JP18343087A JPS6428924A JP S6428924 A JPS6428924 A JP S6428924A JP 18343087 A JP18343087 A JP 18343087A JP 18343087 A JP18343087 A JP 18343087A JP S6428924 A JPS6428924 A JP S6428924A
- Authority
- JP
- Japan
- Prior art keywords
- spacer
- film
- etching
- sinx
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To enhance a production yield of a metal pattern by a method wherein an insulating film spacer is formed by continuously changing an etching rate of this spacer to be large on the side of a semiconductor substrate and to be small on the side of the surface in such a way that a side-etching amount during an etching operation of the insulating film spacer is smaller than a film thickness of the spacer. CONSTITUTION:A spacer film 11 composed of SiNx:H is formed on a semiinsulating GaAs substrate 101 by a plasma CVD method. During this process, a parameter of one out of a ratio of a gas flow rate, a pressure inside a chamber and the high-frequency electric power to be impressed is changed continuously among conditions to form the SiNx:H spacer film; an etching rate of the spacer film is reduced continuously from the side of the substrate to the side of the surface. In succession, a photoresist film 12 is applied to the spacer film 11; a development operation is executed; an opening 22 is made in the photoresist film; the SiNx:H spacer film 11 at this opening 22 is etched by using an NH4F/HF solution; a side etching part 21 is formed. After that, a metal layer 13, e.g. Al, is evaporated; the metal is removed by a lift-off method; a metal pattern 23 is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18343087A JPS6428924A (en) | 1987-07-24 | 1987-07-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18343087A JPS6428924A (en) | 1987-07-24 | 1987-07-24 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6428924A true JPS6428924A (en) | 1989-01-31 |
Family
ID=16135639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18343087A Pending JPS6428924A (en) | 1987-07-24 | 1987-07-24 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6428924A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8180773B2 (en) | 2009-05-27 | 2012-05-15 | International Business Machines Corporation | Detecting duplicate documents using classification |
-
1987
- 1987-07-24 JP JP18343087A patent/JPS6428924A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8180773B2 (en) | 2009-05-27 | 2012-05-15 | International Business Machines Corporation | Detecting duplicate documents using classification |
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