JPS5871626A - Plasma etching device - Google Patents

Abstract

PURPOSE:To improve the patterning accuracy for the titled device by a method wherein a plus electrode and a minus electrode are provided on the upper and the lower sides of a semiconductor substrate, the upper electrode is formed in the size 3/2 as large as that of the lower electrode with its surface made in slightly curved form. CONSTITUTION:This device sonsists of a cylindrical reaction pipe 3 with an upper plus electrode 4, and connected to a gas introducing pipe 1 to be coupled to the source of gas supply, a gas exhaust pipe 2 to be coupled to the source of high vacuum, and a high frequency oscillator located inside a reactor pipe. The plus electrode 4 connected to the high frequency oscillator is positioned vertically in parallel to the frequency oscillator 6 which was placed on an etching stand 5 having the minus electrode. As the plus electrode has a slightly curved surface and it is formed larger in size of 3/2 or more of the minus electrode, the plus electrode is positioned nearer to the semiconductor substrate 6, and as a result, the etching speed is increased and the etching progresses uniformly, thereby enabling to improve the yield rate of production and the reliability of the plasma etching device.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plasma etching apparatus used in semiconductor IIT manufacturing.

Conventionally, the fl! Plasma etching equipment, which selectively patterns metal or insulating films adhered to surfaces as oxide films or photoresist films, uses an electrode connected to a high-frequency oscillator on the outside of a cylindrical reaction tube. Because the etching process is installed at There were variations in the pattern processing accuracy of the parts. I! In the case of a metal film having a high etching rate, the effect is large and has a great impact on the yield and reliability of semiconductor devices.

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma etching apparatus that does not cause any difference in pattern processing between the peripheral portion and the central portion of a semiconductor substrate.

The plasma etching apparatus 11 of the present invention has a gas introduction pipe and a gas discharge pipe, and has an electrode installed inside the reaction tube, a cylindrical reaction tube, a gas supply source connected to the gas introduction pipe, and a gas discharge pipe. A connected high vacuum source and a high frequency oscillator connected to the wrinkled electrode are installed at the center of the reaction tube.The semiconductor substrate subjected to photoresist etching is placed on the etching table, and selectively etched using various etching gases. In a plasma etching device for pattern processing, electrodes installed inside a reaction tube are placed at the top (+ electrode) and bottom (- electrode) of a semiconductor substrate placed on a processing table. This plasma etching apparatus has a structure in which the nine electrodes are more than 3/2 the size of the lower electrode, and the cough electrode has a slightly curved surface.

The plasma etching apparatus of the present invention conventionally uses (e) electrodes and (→
Electrodes are provided above and below a semiconductor substrate placed on an etching table, and the upper electrode has a small surface, and the size of the electrode is 3/2 that of the lower electrode. In this case, the plasma is uniformly applied to the semiconductor substrate71)
It has been found that the etching speed is faster than before and the pattern processing accuracy can be improved.

Next, one embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view of a plasma air steaming device for explaining one embodiment of the present invention. The plasma etching apparatus of this embodiment includes a gas inlet pipe 1 connected to a gas supply source, a gas exhaust pipe 2 connected to a high vacuum source, and a slightly curved upper part connected to a high frequency oscillator inside the reaction tube. ) From the cylindrical reaction tube 3 having the electrode 4't-, (→the semiconductor substrate 6 placed on the etching table 5 having the electrode)
It is a device in which the size of the electrode 4 is 3/2 of the size of the (→electrode).

That is, according to this embodiment, the electrode 4 connected to the high frequency oscillator is placed on the processing table 5 and vertically parallel to the semiconductor substrate 6.
g) The electrode has a slightly curved surface, (→3/3 from the electrode)
By having a size of 2 or more, the etch rate increases when the electrode position is closer to the semiconductor substrate 6 than in the past, and
Etching, which conventionally progressed from the periphery, progresses uniformly within the semiconductor substrate, improving pattern processing accuracy and improving yield and reliability.

In the above-mentioned embodiments, the plasma etching apparatus was explained using a single-wafer processing at, but it goes without saying that it can be applied to a plasma etching apparatus capable of processing two or more sheets.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a plasma etching apparatus showing this embodiment. In the figure, l... gas introduction pipe, 2...
...Gas exhaust pipe, 3...Reaction tube, 4...
... (G) Electrode plate, G... (→ Etching processing table having an electrode plate, 6...°.° Semiconductor substrate. 1st -

Claims (1)

[Claims] A cylindrical reaction tube having a gas introduction pipe and a gas exhaust pipe and an electrode arranged inside the reaction tube, a gas supply source connected to the gas introduction pipe, a high vacuum source connected to the cough gas exhaust pipe, and a cough electrode. The high frequency oscillation theory that connects t' includes a photoresist process in which a classmate semiconductor substrate is placed on an etching table installed in the center of the reaction tube, and various processes are performed in a plasma etching apparatus that performs p-selective pattern processing using etching gas. Nine electrodes were installed inside the reaction tube, and the upper and lower electrodes were arranged parallel to the semiconductor substrate placed on the etching table.
A plasma etching apparatus having a structure in which an upper electrode is 3/2 or more in size than a lower electrode, and the electrode has a slightly curved surface.