JPS596543A - Etching method and device therefor - Google Patents
Etching method and device thereforInfo
- Publication number
- JPS596543A JPS596543A JP11543882A JP11543882A JPS596543A JP S596543 A JPS596543 A JP S596543A JP 11543882 A JP11543882 A JP 11543882A JP 11543882 A JP11543882 A JP 11543882A JP S596543 A JPS596543 A JP S596543A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- chamber
- wafer
- magnetic field
- frequency electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 239000000376 reactant Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 abstract description 8
- 230000005684 electric field Effects 0.000 abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体基板（ウェハ）にエツチング処理を施こ
すためのエツチング方法および装置に関し、特に、能率
良くエツチングを行なうことのできるエツチング方法お
よび装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an etching method and apparatus for etching a semiconductor substrate (wafer), and more particularly to an etching method and apparatus capable of etching efficiently.
従来、半導体製品の製造過程においてウェハに対してポ
リシリコン膜、Ｓｉｎ、膜にエツチング処理を施こす場
合、たとえば平行平板電極を用いてガスプラズマエツチ
ングを行なう方式が採用されている。その場合、エツチ
ング用のプラズマガスとし℃四フッ化メタン（ＣＦ４）
を用いるときには、イオン性反応種とし−（Ｆ＋または
ＣＦ：が考えられる。Conventionally, in the process of manufacturing semiconductor products, when etching a polysilicon film, a Si film, or a film on a wafer, a method has been adopted in which gas plasma etching is performed using, for example, parallel plate electrodes. In that case, the plasma gas for etching is °C tetrafluoromethane (CF4).
When using -(F+ or CF:) as the ionic reactive species.
また、エツチングには異方性と等方性があり、異方性エ
ツチングではイオン性反応種としてＣＦｓ＋を利用して
いるが、等方性エツチングではＦ”を利用する。その場
合に１等方性エツチングではオーバーエッチ量の制御が
困難であるが、異方性エツチングでは制御が容易であり
、エツチング精度の向上にも適しているが、エッチレー
トが比較的低いという問題がある。一方、等方性エツチ
ングの場合にも、エツチング精度を向上させることが望
まれている。In addition, there are two types of etching: anisotropic and isotropic. In anisotropic etching, CFs+ is used as an ionic reactive species, but in isotropic etching, F" is used. With anisotropic etching, it is difficult to control the amount of overetching, but with anisotropic etching, it is easy to control and is suitable for improving etching accuracy, but there is a problem that the etch rate is relatively low.On the other hand, etc. Even in the case of directional etching, it is desired to improve the etching accuracy.
したがって１本発明の目的は、前記従来技術の課題に鑑
みてなされたもので、エツチングレートな向上させ、能
率の良いエツチングが可能であり。Therefore, one object of the present invention is to improve the etching rate and enable efficient etching.
エツチング精度を向上させることの可能なエツチング方
法および装置を提供することＫある。It is an object of the present invention to provide an etching method and apparatus that can improve etching accuracy.
この目的を達成するため１本発明はエツチング用のイオ
ン性反応種に対して周囲から磁界を印加し、イオン性反
応種を半導体基板（ウェハ）のエツチングのために集中
的に有効利用するものである。In order to achieve this object, the present invention applies a magnetic field from the surroundings to ionic reactive species for etching, and effectively utilizes the ionic reactive species intensively for etching a semiconductor substrate (wafer). be.
以下１本発明を図面に示す一実施例にしたがって詳細に
説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be explained in detail below according to an embodiment shown in the drawings.
第１図は本発明によるエツチング装置の一実施例を示す
概略的縦断面図、第２図はその水平断面図である。FIG. 1 is a schematic vertical sectional view showing an embodiment of an etching apparatus according to the present invention, and FIG. 2 is a horizontal sectional view thereof.
本実施例において、エツチング用のチャンバｌの中には
平行平板電極２．３が水平方向に配置され、これらの平
行平板電極２．３はプラズマ発生用の高周波電源４＆Ｃ
接続されている。エツチング処理されるウェハ５は平行
平板電極３上に置かれている。In this embodiment, parallel plate electrodes 2.3 are arranged horizontally in the etching chamber l, and these parallel plate electrodes 2.3 are connected to a high frequency power source 4&C for plasma generation.
It is connected. A wafer 5 to be etched is placed on parallel plate electrodes 3.
前記チャンバ１の底壁には排気管６が複数本接続され、
これらの排気管６は図示しない真空源に連通し工いる。A plurality of exhaust pipes 6 are connected to the bottom wall of the chamber 1,
These exhaust pipes 6 are connected to a vacuum source (not shown).
さらに１本実施例においては、ウェハ５のほぼ水平方向
やや上方、すなわち平行平板電極２．３の間の位置にお
けるチャンバ１の外側には、磁界発生手段としてのコイ
ル７が４個互いに直角に配設されている。これらのコイ
ル７はウェハ５のボ１１シリコン、Ｓｉｎ、のエツチン
グに用いられるＣＦ、ガスのＣＦ−を磁界によりチャン
バ１の中心方向すなわちウェハ５の方向に移動させ、エ
ツチングのための反応に寄与するイオン性反応種（本実
施例ではｃｐｓ）の量をできるだけ多くし、エツチング
レートな向上させるためのものである。Furthermore, in this embodiment, four coils 7 as magnetic field generating means are arranged at right angles to each other on the outside of the chamber 1 at a position slightly above the wafer 5 in the horizontal direction, that is, between the parallel plate electrodes 2.3. It is set up. These coils 7 use a magnetic field to move the gas CF-, which is used for etching the silicon (Si) on the wafer 5, toward the center of the chamber 1, that is, toward the wafer 5, and contribute to the reaction for etching. This is to increase the amount of ionic reactive species (cps in this example) as much as possible to improve the etching rate.
次に１本実施例の作用について説明する。Next, the operation of this embodiment will be explained.
高周波電源４でチャンバ１内の平行平板電極２゜３に高
周波電力を印加すると、両電極２．３間には高周波電界
が発生され、ガスプラズマが発生される。この実施例で
は、エツチング用の反応ガスとしてＣＦ４が用いられて
いるので、チャンバ１内にはイオン性反応種としてＣＦ
ｔが発生し、このＣＦｓ＋を用いてウェハ５のポリシリ
コン膜またはＳｌｙ、膜に対し異方性エツチングが行わ
れる。When high frequency power is applied to the parallel plate electrodes 2.3 in the chamber 1 by the high frequency power source 4, a high frequency electric field is generated between the two electrodes 2.3, and gas plasma is generated. In this example, since CF4 is used as the reactive gas for etching, CF4 is used as the ionic reactive species in the chamber 1.
t is generated, and the polysilicon film or Sly film of the wafer 5 is anisotropically etched using this CFs+.
その場合１本実施例では、コイル７によりチャンバ１の
外周側の四方から磁界が印加されるので。In this case, in this embodiment, a magnetic field is applied from all sides of the outer circumference of the chamber 1 by the coil 7.
チャンバ１内のＣＦ−には咳チャンバ１の中心方向への
力が加えられ、ＣＦｔはチャンバ１の中心部すなわちウ
ェハ５の上方に集中する。A force is applied to the CF− in the chamber 1 toward the center of the cough chamber 1, and the CFt is concentrated in the center of the chamber 1, that is, above the wafer 5.
したがって、本実施例においては、ウェハ５のエツチン
グ反応に寄与するＣＦｔの量が増加し。Therefore, in this embodiment, the amount of CFt contributing to the etching reaction of the wafer 5 increases.
エツチングレートが向上する。その結果、エツチングの
能率が良く、処理枚数が増加し、またエツチング精度が
向上する。特に、異方性エツチングを行なう場合には、
等方性エツチングの場合に比してエツチング精度の向上
がより大きく、極めて良好なエツチング精度が得られる
ので、歩留りの向上も図ることができる。Etching rate is improved. As a result, etching efficiency is improved, the number of sheets processed increases, and etching accuracy improves. Especially when performing anisotropic etching,
The improvement in etching accuracy is greater than in the case of isotropic etching, and extremely good etching accuracy can be obtained, so that the yield can also be improved.
なお、コイル７により印加される磁界の向きは平行平板
電極２．３間に印加される電界の方向が逆方向になった
場合にはそれに応じて変え、常にチャンバｌの中心部へ
の力が加わるよう制御される。Note that the direction of the magnetic field applied by the coil 7 is changed accordingly when the direction of the electric field applied between the parallel plate electrodes 2 and 3 is reversed, so that the force toward the center of the chamber l is always maintained. controlled to participate.
また、エツチング用のガスとしてはＣＦ４の他に、 Ｃ
ＣＡ 、 Ｂ （’ｇ、の如き塩素系ガス等、様々なガ
スを用いることができる。In addition to CF4, C
Various gases can be used, such as chlorine-based gases such as CA, B ('g, etc.).
本発明は異方性１等方性を問わず、イオンを利用するエ
ツチング技術全般に適用でき、微細エツチング加工にも
好適である。The present invention is applicable to all etching techniques using ions, regardless of anisotropy, and is also suitable for fine etching processing.
以上説明したように、本発明によれば、エツチングレー
トな向上させ、能率良くエツチングを行なうことができ
ろうAs explained above, according to the present invention, it is possible to improve the etching rate and perform etching efficiently.
第１図は本発明によるエツチング装置の一実施例を示す
概略的縦断面図、
第２図はその水平断面図である。
１・・・チャンバ、２．３・・・平行平板電極、４・・
・高周波電源、５・・・ウェハ、６・・・排気管、７・
・・コイル（磁界発生手段）。
代理人 弁理士 薄 １）利 幸、FIG. 1 is a schematic vertical sectional view showing an embodiment of an etching apparatus according to the present invention, and FIG. 2 is a horizontal sectional view thereof. 1... Chamber, 2.3... Parallel plate electrode, 4...
・High frequency power supply, 5... wafer, 6... exhaust pipe, 7.
... Coil (magnetic field generating means). Agent Patent Attorney Susuki 1) Toshiyuki,
Claims (1)
行なう方法におい工、イオン性反応糧に対１−て周囲方
向から磁界を印加しながらエツチングすることを特徴と
するエツチング方法。 ２、イオン性反応種を用いてチャンバ内の半導体基板に
エツチングを行なう装置において、半導体基板を収容し
たチャンバの周囲側に磁界発生手段を配設したことを特
徴とするエツチング装置。[Claims] 1. A method for etching a semiconductor substrate at °C using an ionic reactant; 1. An etching process characterized by etching the ionic reactant while applying a magnetic field from the surrounding direction; Method. 2. An etching apparatus for etching a semiconductor substrate in a chamber using ionic reactive species, characterized in that a magnetic field generating means is disposed around the chamber containing the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11543882A JPS596543A (en) | 1982-07-05 | 1982-07-05 | Etching method and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11543882A JPS596543A (en) | 1982-07-05 | 1982-07-05 | Etching method and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS596543A true JPS596543A (en) | 1984-01-13 |
Family
ID=14662556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11543882A Pending JPS596543A (en) | 1982-07-05 | 1982-07-05 | Etching method and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS596543A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62195122A (en) * | 1985-11-29 | 1987-08-27 | マテリアルズ リサーチ コーポレイション | Plasma processing apparatus with magnified magnetic field |
| JPS62218586A (en) * | 1986-03-19 | 1987-09-25 | Anelva Corp | Plasma treating device |
| JPS63278339A (en) * | 1986-12-19 | 1988-11-16 | アプライド マテリアルズインコーポレーテッド | Bromine and iodine etching for silicon and silicide |
-
1982
- 1982-07-05 JP JP11543882A patent/JPS596543A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62195122A (en) * | 1985-11-29 | 1987-08-27 | マテリアルズ リサーチ コーポレイション | Plasma processing apparatus with magnified magnetic field |
| JPS62218586A (en) * | 1986-03-19 | 1987-09-25 | Anelva Corp | Plasma treating device |
| JPS63278339A (en) * | 1986-12-19 | 1988-11-16 | アプライド マテリアルズインコーポレーテッド | Bromine and iodine etching for silicon and silicide |
| US6020270A (en) * | 1986-12-19 | 2000-02-01 | Applied Materials, Inc. | Bomine and iodine etch process for silicon and silicides |
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