JPS5627936A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5627936A
JPS5627936A JP10345879A JP10345879A JPS5627936A JP S5627936 A JPS5627936 A JP S5627936A JP 10345879 A JP10345879 A JP 10345879A JP 10345879 A JP10345879 A JP 10345879A JP S5627936 A JPS5627936 A JP S5627936A
Authority
JP
Japan
Prior art keywords
film
semiconductor
photoregist
regist
glassed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10345879A
Other languages
Japanese (ja)
Inventor
Toshihiko Ono
Ichiro Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10345879A priority Critical patent/JPS5627936A/en
Publication of JPS5627936A publication Critical patent/JPS5627936A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Abstract

PURPOSE:To improve an anti-moisture and anti-medicines features, to facilitate a surface treatment process thereafter and to prevent the characteristic deterioration of semiconductor device in the case of mold enclosure by a method wherein a photoregist film that coated a PSG film is glassnized. CONSTITUTION:Al electrodes are wired on a substrate 1 of semiconductor through an insulating film, these are coated with PSG paccination film 4, further a positive type hot regist 8 is formed over them and the prescribed opening 3 is formed. And then the hot regist 8 is glassed at 8' by the heat treatment at 400-480 deg.C in the nitrogen atomosphere to improve the antimoisture and antimedicines features. Thus it can be used as an protecture film of etching process and washing process to adjust the thickness of silicon substrates and can be prevented the deterioration of semiconductor charactristic. Further, when a negative type photoregist is used, it is glassed by ion implantation of boron or phosphorus or others.
JP10345879A 1979-08-14 1979-08-14 Semiconductor device and manufacture thereof Pending JPS5627936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10345879A JPS5627936A (en) 1979-08-14 1979-08-14 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10345879A JPS5627936A (en) 1979-08-14 1979-08-14 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5627936A true JPS5627936A (en) 1981-03-18

Family

ID=14354572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10345879A Pending JPS5627936A (en) 1979-08-14 1979-08-14 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5627936A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975648A (en) * 1982-10-23 1984-04-28 Nippon Precision Saakitsutsu Kk Semiconductor device and manufacture thereof
EP0212098A2 (en) * 1985-08-14 1987-03-04 Mitsubishi Denki Kabushiki Kaisha Method of forming a passivation film
US7439993B2 (en) 2006-03-15 2008-10-21 Ricoh Company, Ltd. Image processing method and image processing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975648A (en) * 1982-10-23 1984-04-28 Nippon Precision Saakitsutsu Kk Semiconductor device and manufacture thereof
EP0212098A2 (en) * 1985-08-14 1987-03-04 Mitsubishi Denki Kabushiki Kaisha Method of forming a passivation film
US5013689A (en) * 1985-08-14 1991-05-07 Mitsubishi Denki Kabushiki Kaisha Method of forming a passivation film
US7439993B2 (en) 2006-03-15 2008-10-21 Ricoh Company, Ltd. Image processing method and image processing apparatus

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