JPS57113233A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57113233A
JPS57113233A JP18907080A JP18907080A JPS57113233A JP S57113233 A JPS57113233 A JP S57113233A JP 18907080 A JP18907080 A JP 18907080A JP 18907080 A JP18907080 A JP 18907080A JP S57113233 A JPS57113233 A JP S57113233A
Authority
JP
Japan
Prior art keywords
approx
film
pit
semiconductor device
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18907080A
Other languages
Japanese (ja)
Inventor
Haruo Kawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18907080A priority Critical patent/JPS57113233A/en
Publication of JPS57113233A publication Critical patent/JPS57113233A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the element manufacturing effective area of a semiconductor device by forming a naturally oxidized film on the surface of an InP substrate, then heat treating the heat treating protective film covered thereon, thereby reducing the pit and crack produced upon heat treatment. CONSTITUTION:Si<+> ions 2 are implanted on an InP substrate 1 to form an Si implantation layer 3. The substrate 1 is boiled in H2O2 of approx. 100 deg.C for 15min, and is oxidized for approx. 20sec while emitting a light in hot nitric acid to form a naturally oxidized film 4 of InP of approx. 100Angstrom thick. A phosphorus glass film 5 of approx. 8wt%-phosphorus density is covered at approx. 300 deg.C on the film 4. Eventually, it is heat treated at 750 deg.C for 20min in H2 or N2 atmosphere. In this manner, it can prevent the pit and crack produced after the heat treatment.
JP18907080A 1980-12-29 1980-12-29 Manufacture of semiconductor device Pending JPS57113233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18907080A JPS57113233A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18907080A JPS57113233A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57113233A true JPS57113233A (en) 1982-07-14

Family

ID=16234792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18907080A Pending JPS57113233A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57113233A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250622A (en) * 1984-05-25 1985-12-11 Nec Corp Impurity introducing method
JPS6184828A (en) * 1984-10-02 1986-04-30 Nec Corp Formation of inp ion-implanted conductive layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250622A (en) * 1984-05-25 1985-12-11 Nec Corp Impurity introducing method
JPS6184828A (en) * 1984-10-02 1986-04-30 Nec Corp Formation of inp ion-implanted conductive layer

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