JPS5534416A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS5534416A JPS5534416A JP10621378A JP10621378A JPS5534416A JP S5534416 A JPS5534416 A JP S5534416A JP 10621378 A JP10621378 A JP 10621378A JP 10621378 A JP10621378 A JP 10621378A JP S5534416 A JPS5534416 A JP S5534416A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- laser light
- region
- layer
- absorption coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To form a layer or region having a laser light absorption coefficient on the surface or the like of an ion implantation region thereby to shorten the laser light irradiation time at the time of annealing and prevent any crack of the substrate.
CONSTITUTION: An annealing operation due to irradiation of laser light is carried out by forming a layer or region having a high laser absorption coefficient on the surface of the ion implanation region of the substrate and a part except said surface. In order to form said layer or region, there is used a method of irradiating ultraviolet rays the luminous source of which is a Xe lamp to for example, a Si substrate 10, to irradiate CO2 laser light, a method of irradiating CO2 light by increasing the temperature of the substrate 10 by a heater 11, or a method of irradiating CO2 laser light after placing a film 11 having a great absorption coefficient in a wavelength of about 10μm such as SiO2 or phosphorus glass film on the surface of the Si substrate 10.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10621378A JPS5534416A (en) | 1978-09-01 | 1978-09-01 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10621378A JPS5534416A (en) | 1978-09-01 | 1978-09-01 | Method of manufacturing semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18226581A Division JPS57111020A (en) | 1981-11-16 | 1981-11-16 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5534416A true JPS5534416A (en) | 1980-03-11 |
Family
ID=14427864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10621378A Pending JPS5534416A (en) | 1978-09-01 | 1978-09-01 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5534416A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56157023A (en) * | 1980-05-08 | 1981-12-04 | Fujitsu Ltd | Manufacture of semiconductor device |
WO1985004731A1 (en) * | 1984-04-09 | 1985-10-24 | Hosiden Electronics Co., Ltd. | Liquid crystal display element and a method of producing the same |
JP2006261192A (en) * | 2005-03-15 | 2006-09-28 | Fujitsu Ltd | Silicon wafer processing method and equipment for conducting the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4926456A (en) * | 1972-07-11 | 1974-03-08 |
-
1978
- 1978-09-01 JP JP10621378A patent/JPS5534416A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4926456A (en) * | 1972-07-11 | 1974-03-08 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56157023A (en) * | 1980-05-08 | 1981-12-04 | Fujitsu Ltd | Manufacture of semiconductor device |
WO1985004731A1 (en) * | 1984-04-09 | 1985-10-24 | Hosiden Electronics Co., Ltd. | Liquid crystal display element and a method of producing the same |
JP2006261192A (en) * | 2005-03-15 | 2006-09-28 | Fujitsu Ltd | Silicon wafer processing method and equipment for conducting the same |
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