JPS5534416A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS5534416A
JPS5534416A JP10621378A JP10621378A JPS5534416A JP S5534416 A JPS5534416 A JP S5534416A JP 10621378 A JP10621378 A JP 10621378A JP 10621378 A JP10621378 A JP 10621378A JP S5534416 A JPS5534416 A JP S5534416A
Authority
JP
Japan
Prior art keywords
substrate
laser light
region
layer
absorption coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10621378A
Other languages
Japanese (ja)
Inventor
Shizunori Ooyu
Masanobu Miyao
Mitsumasa Koyanagi
Tetsukazu Hashimoto
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10621378A priority Critical patent/JPS5534416A/en
Publication of JPS5534416A publication Critical patent/JPS5534416A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To form a layer or region having a laser light absorption coefficient on the surface or the like of an ion implantation region thereby to shorten the laser light irradiation time at the time of annealing and prevent any crack of the substrate.
CONSTITUTION: An annealing operation due to irradiation of laser light is carried out by forming a layer or region having a high laser absorption coefficient on the surface of the ion implanation region of the substrate and a part except said surface. In order to form said layer or region, there is used a method of irradiating ultraviolet rays the luminous source of which is a Xe lamp to for example, a Si substrate 10, to irradiate CO2 laser light, a method of irradiating CO2 light by increasing the temperature of the substrate 10 by a heater 11, or a method of irradiating CO2 laser light after placing a film 11 having a great absorption coefficient in a wavelength of about 10μm such as SiO2 or phosphorus glass film on the surface of the Si substrate 10.
COPYRIGHT: (C)1980,JPO&Japio
JP10621378A 1978-09-01 1978-09-01 Method of manufacturing semiconductor device Pending JPS5534416A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10621378A JPS5534416A (en) 1978-09-01 1978-09-01 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10621378A JPS5534416A (en) 1978-09-01 1978-09-01 Method of manufacturing semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP18226581A Division JPS57111020A (en) 1981-11-16 1981-11-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5534416A true JPS5534416A (en) 1980-03-11

Family

ID=14427864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10621378A Pending JPS5534416A (en) 1978-09-01 1978-09-01 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5534416A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157023A (en) * 1980-05-08 1981-12-04 Fujitsu Ltd Manufacture of semiconductor device
WO1985004731A1 (en) * 1984-04-09 1985-10-24 Hosiden Electronics Co., Ltd. Liquid crystal display element and a method of producing the same
JP2006261192A (en) * 2005-03-15 2006-09-28 Fujitsu Ltd Silicon wafer processing method and equipment for conducting the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (en) * 1972-07-11 1974-03-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (en) * 1972-07-11 1974-03-08

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157023A (en) * 1980-05-08 1981-12-04 Fujitsu Ltd Manufacture of semiconductor device
WO1985004731A1 (en) * 1984-04-09 1985-10-24 Hosiden Electronics Co., Ltd. Liquid crystal display element and a method of producing the same
JP2006261192A (en) * 2005-03-15 2006-09-28 Fujitsu Ltd Silicon wafer processing method and equipment for conducting the same

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