JPS6415926A - Forming method of fine pattern - Google Patents
Forming method of fine patternInfo
- Publication number
- JPS6415926A JPS6415926A JP17214187A JP17214187A JPS6415926A JP S6415926 A JPS6415926 A JP S6415926A JP 17214187 A JP17214187 A JP 17214187A JP 17214187 A JP17214187 A JP 17214187A JP S6415926 A JPS6415926 A JP S6415926A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- room temperature
- vacuum
- layer
- worked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve sensitivity without sacrificing resolution without generating any thermal decomposition of the photosensitive group of a resist by applying a resist onto a layer to be worked, exposing the resist to a vacuum atmosphere at room temperature or irradiating the resist with light having a wavelength different from that of a photosenstive range, charged beams, etc., instead of heat treatment, to evaporate the solvent of the resist. CONSTITUTION:The upper section of a layer 2 to be worked such as a metallic layer spread onto a semiconductor substrate 1 is spin-coated with a resist 3. The semiconductor substrate 1 is positioned in a vacuum, and held at room temperature, thus evaporating a solvent contained in the resist 3. The resist is exposed by ultraviolet rays, and a section exposed through development treatment is melted and removed, thus shaping a fine pattern. That is, since the resist is dried by holding at room temperature in the vacuum, no heat treatment is applied before the pattern is formed, and no sensitive group in the resist is decomposed. Visible rays with wavelengths older than the photosensitive wavelength, charged beams, etc., beside said method also display the same effect for drying the resist 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17214187A JPS6415926A (en) | 1987-07-09 | 1987-07-09 | Forming method of fine pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17214187A JPS6415926A (en) | 1987-07-09 | 1987-07-09 | Forming method of fine pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6415926A true JPS6415926A (en) | 1989-01-19 |
Family
ID=15936325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17214187A Pending JPS6415926A (en) | 1987-07-09 | 1987-07-09 | Forming method of fine pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6415926A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0684639A (en) * | 1991-07-04 | 1994-03-25 | Amorphous Denshi Device Kenkyusho:Kk | Thin film magnetic element |
US5516626A (en) * | 1990-04-23 | 1996-05-14 | Tadahiro Ohmi | Resist processing method |
US9988529B2 (en) | 2015-11-20 | 2018-06-05 | Ticona Llc | High flow polyaryletherketone composition |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS546171A (en) * | 1977-06-15 | 1979-01-18 | Mitsubishi Electric Corp | Dryer |
JPS60165727A (en) * | 1984-02-08 | 1985-08-28 | Toshiba Corp | Drying method of semiconductor wafer |
JPS61111541A (en) * | 1984-11-06 | 1986-05-29 | Toshiba Corp | Wafer dryer |
JPS61139030A (en) * | 1984-12-11 | 1986-06-26 | Shimada Phys & Chem Ind Co Ltd | Drying method for semiconductor wafer and cassette |
-
1987
- 1987-07-09 JP JP17214187A patent/JPS6415926A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS546171A (en) * | 1977-06-15 | 1979-01-18 | Mitsubishi Electric Corp | Dryer |
JPS60165727A (en) * | 1984-02-08 | 1985-08-28 | Toshiba Corp | Drying method of semiconductor wafer |
JPS61111541A (en) * | 1984-11-06 | 1986-05-29 | Toshiba Corp | Wafer dryer |
JPS61139030A (en) * | 1984-12-11 | 1986-06-26 | Shimada Phys & Chem Ind Co Ltd | Drying method for semiconductor wafer and cassette |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5516626A (en) * | 1990-04-23 | 1996-05-14 | Tadahiro Ohmi | Resist processing method |
JPH0684639A (en) * | 1991-07-04 | 1994-03-25 | Amorphous Denshi Device Kenkyusho:Kk | Thin film magnetic element |
US9988529B2 (en) | 2015-11-20 | 2018-06-05 | Ticona Llc | High flow polyaryletherketone composition |
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