JPS5568638A - Treating method of semiconductor surface with heat - Google Patents

Treating method of semiconductor surface with heat

Info

Publication number
JPS5568638A
JPS5568638A JP14116178A JP14116178A JPS5568638A JP S5568638 A JPS5568638 A JP S5568638A JP 14116178 A JP14116178 A JP 14116178A JP 14116178 A JP14116178 A JP 14116178A JP S5568638 A JPS5568638 A JP S5568638A
Authority
JP
Japan
Prior art keywords
light
heat
xenon lamp
semiconductor
condensed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14116178A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14116178A priority Critical patent/JPS5568638A/en
Publication of JPS5568638A publication Critical patent/JPS5568638A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To uniformly and efficiently heat the surface of a semiconductor, by irradiating the surface with a pulse of light from a xenon lamp.
CONSTITUTION: Light of a xenon lamp is condensed and irradiated as a pulse upon the entire surface a silicon wafer to instantaneously heat the surface. When the capacity of the xenon lamp is small, the light is condensed to the size of a single chip 2 and irradiated upon a region 4 except for a scribed region. The light can be shaped by an aperture between the light source and the wafer to make the distribution of the light uniform, or patterned heat treatment can be effected by a mask. The surface of the semiconductor is heated instantaneously and effectively enough for the annealing of a shallow ion-implanted layer, removal of surface crystal defects or the like.
COPYRIGHT: (C)1980,JPO&Japio
JP14116178A 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat Pending JPS5568638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14116178A JPS5568638A (en) 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14116178A JPS5568638A (en) 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat

Publications (1)

Publication Number Publication Date
JPS5568638A true JPS5568638A (en) 1980-05-23

Family

ID=15285544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14116178A Pending JPS5568638A (en) 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat

Country Status (1)

Country Link
JP (1) JPS5568638A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504323A (en) * 1980-09-12 1985-03-12 Ushio Denki Kabushiki Kaisha Method for annealing semiconductors with a planar source composed of flash discharge lamps
US4632908A (en) * 1984-05-03 1986-12-30 Abbott Laboratories Heating system for rotating members
JP2002141298A (en) * 2000-11-02 2002-05-17 Toshiba Corp Method for manufacturing semiconductor device
JP2007274007A (en) * 2007-06-18 2007-10-18 Toshiba Corp Method for manufacturing semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504323A (en) * 1980-09-12 1985-03-12 Ushio Denki Kabushiki Kaisha Method for annealing semiconductors with a planar source composed of flash discharge lamps
US4632908A (en) * 1984-05-03 1986-12-30 Abbott Laboratories Heating system for rotating members
JP2002141298A (en) * 2000-11-02 2002-05-17 Toshiba Corp Method for manufacturing semiconductor device
JP2007274007A (en) * 2007-06-18 2007-10-18 Toshiba Corp Method for manufacturing semiconductor device

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