JPS5568638A - Treating method of semiconductor surface with heat - Google Patents

Treating method of semiconductor surface with heat

Info

Publication number
JPS5568638A
JPS5568638A JP14116178A JP14116178A JPS5568638A JP S5568638 A JPS5568638 A JP S5568638A JP 14116178 A JP14116178 A JP 14116178A JP 14116178 A JP14116178 A JP 14116178A JP S5568638 A JPS5568638 A JP S5568638A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
surface
light
heat
xenon lamp
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14116178A
Inventor
Seiichi Iwamatsu
Original Assignee
Chiyou Lsi Gijutsu Kenkyu Kumiai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To uniformly and efficiently heat the surface of a semiconductor, by irradiating the surface with a pulse of light from a xenon lamp.
CONSTITUTION: Light of a xenon lamp is condensed and irradiated as a pulse upon the entire surface a silicon wafer to instantaneously heat the surface. When the capacity of the xenon lamp is small, the light is condensed to the size of a single chip 2 and irradiated upon a region 4 except for a scribed region. The light can be shaped by an aperture between the light source and the wafer to make the distribution of the light uniform, or patterned heat treatment can be effected by a mask. The surface of the semiconductor is heated instantaneously and effectively enough for the annealing of a shallow ion-implanted layer, removal of surface crystal defects or the like.
COPYRIGHT: (C)1980,JPO&Japio
JP14116178A 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat Pending JPS5568638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14116178A JPS5568638A (en) 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14116178A JPS5568638A (en) 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat

Publications (1)

Publication Number Publication Date
JPS5568638A true true JPS5568638A (en) 1980-05-23

Family

ID=15285544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14116178A Pending JPS5568638A (en) 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat

Country Status (1)

Country Link
JP (1) JPS5568638A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504323A (en) * 1980-09-12 1985-03-12 Ushio Denki Kabushiki Kaisha Method for annealing semiconductors with a planar source composed of flash discharge lamps
US4632908A (en) * 1984-05-03 1986-12-30 Abbott Laboratories Heating system for rotating members
JP2007274007A (en) * 2007-06-18 2007-10-18 Toshiba Corp Method for manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504323A (en) * 1980-09-12 1985-03-12 Ushio Denki Kabushiki Kaisha Method for annealing semiconductors with a planar source composed of flash discharge lamps
US4632908A (en) * 1984-05-03 1986-12-30 Abbott Laboratories Heating system for rotating members
JP2007274007A (en) * 2007-06-18 2007-10-18 Toshiba Corp Method for manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
JPS52139378A (en) Integrated treatment apparatus for semiconductor wafers
JPS58118154A (en) Semiconductor ic device
JPS5473578A (en) Pattern exposure method of semiconductor substrate and pattern exposure apparatus
JPS61187238A (en) Dry etching method
JPS56108231A (en) Annealing method of semiconductor wafer
JPH02275641A (en) Manufacture of semiconductor device
JPS622531A (en) Manufacture of semiconductor device
JPS5895830A (en) Manufacture of semiconductor device
JPS59169125A (en) Method for heating semiconductor wafer
JPS61116820A (en) Annealing method for semiconductor
JPS58117A (en) Manufacture of semiconductor device
JPS57126134A (en) Processing system for wafer
JPS5390033A (en) Heat treatment equipment
JPH0391932A (en) Manufacture of semiconductor device
JPS63227026A (en) Gettering method for silicon crystal substrate
JPH03266424A (en) Annealing process of semiconductor substrate
JPS57180116A (en) Manufacture of semiconductor device
JPH05206053A (en) Crystal damage remover
JPS55124237A (en) Semiconductor treatment device
JPS58206163A (en) Manufacture of thin film semiconductor device
JPS63160336A (en) System for manufacturing semiconductor device
JPS5831528A (en) Removing method of photoresist
JPS57194525A (en) Manufacture of semiconductor device
JPS63129633A (en) Surface treatment for semiconductor
JPS5546535A (en) Method of manufacturing semiconductor device