JPS5568638A - Treating method of semiconductor surface with heat - Google Patents
Treating method of semiconductor surface with heatInfo
- Publication number
- JPS5568638A JPS5568638A JP14116178A JP14116178A JPS5568638A JP S5568638 A JPS5568638 A JP S5568638A JP 14116178 A JP14116178 A JP 14116178A JP 14116178 A JP14116178 A JP 14116178A JP S5568638 A JPS5568638 A JP S5568638A
- Authority
- JP
- Japan
- Prior art keywords
- light
- heat
- xenon lamp
- semiconductor
- condensed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To uniformly and efficiently heat the surface of a semiconductor, by irradiating the surface with a pulse of light from a xenon lamp.
CONSTITUTION: Light of a xenon lamp is condensed and irradiated as a pulse upon the entire surface a silicon wafer to instantaneously heat the surface. When the capacity of the xenon lamp is small, the light is condensed to the size of a single chip 2 and irradiated upon a region 4 except for a scribed region. The light can be shaped by an aperture between the light source and the wafer to make the distribution of the light uniform, or patterned heat treatment can be effected by a mask. The surface of the semiconductor is heated instantaneously and effectively enough for the annealing of a shallow ion-implanted layer, removal of surface crystal defects or the like.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14116178A JPS5568638A (en) | 1978-11-17 | 1978-11-17 | Treating method of semiconductor surface with heat |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14116178A JPS5568638A (en) | 1978-11-17 | 1978-11-17 | Treating method of semiconductor surface with heat |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5568638A true JPS5568638A (en) | 1980-05-23 |
Family
ID=15285544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14116178A Pending JPS5568638A (en) | 1978-11-17 | 1978-11-17 | Treating method of semiconductor surface with heat |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5568638A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4504323A (en) * | 1980-09-12 | 1985-03-12 | Ushio Denki Kabushiki Kaisha | Method for annealing semiconductors with a planar source composed of flash discharge lamps |
US4632908A (en) * | 1984-05-03 | 1986-12-30 | Abbott Laboratories | Heating system for rotating members |
JP2002141298A (en) * | 2000-11-02 | 2002-05-17 | Toshiba Corp | Method for manufacturing semiconductor device |
JP2007274007A (en) * | 2007-06-18 | 2007-10-18 | Toshiba Corp | Method for manufacturing semiconductor device |
-
1978
- 1978-11-17 JP JP14116178A patent/JPS5568638A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4504323A (en) * | 1980-09-12 | 1985-03-12 | Ushio Denki Kabushiki Kaisha | Method for annealing semiconductors with a planar source composed of flash discharge lamps |
US4632908A (en) * | 1984-05-03 | 1986-12-30 | Abbott Laboratories | Heating system for rotating members |
JP2002141298A (en) * | 2000-11-02 | 2002-05-17 | Toshiba Corp | Method for manufacturing semiconductor device |
JP2007274007A (en) * | 2007-06-18 | 2007-10-18 | Toshiba Corp | Method for manufacturing semiconductor device |
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