JPS5558523A - Boron diffusing method - Google Patents

Boron diffusing method

Info

Publication number
JPS5558523A
JPS5558523A JP13099678A JP13099678A JPS5558523A JP S5558523 A JPS5558523 A JP S5558523A JP 13099678 A JP13099678 A JP 13099678A JP 13099678 A JP13099678 A JP 13099678A JP S5558523 A JPS5558523 A JP S5558523A
Authority
JP
Japan
Prior art keywords
atmosphere
heat treatment
substrate
density
wet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13099678A
Other languages
Japanese (ja)
Other versions
JPS5751970B2 (en
Inventor
Yukio Nagayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tohoku Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Metal Industries Ltd filed Critical Tohoku Metal Industries Ltd
Priority to JP13099678A priority Critical patent/JPS5558523A/en
Publication of JPS5558523A publication Critical patent/JPS5558523A/en
Publication of JPS5751970B2 publication Critical patent/JPS5751970B2/ja
Granted legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To keep B density produced on the surface of a semiconductor substrate constant when diffusing B in a BSG layer into the substrate by applying a heat treatment first at low temperature in a dry O2 atmosphere and then at high temperature in a wet O2 atmosphere.
CONSTITUTION: A BSG layer is predeposited on the surface of a semiconductor substrate, and a heat treatment is applied at 1,000°C for 15 minutes in a dry O2 atmosphere flowing at 5l/min. Next, the temperature is raised up to 1,100°C in N2 atmosphere and as holding 1,100°C, the heat treatment is applied consecutively for 1 hour in the wet O2 atmosphere at 5l/min. The density becomes 1.2W1.4× 1019/cc from redistributing impurities on the surface of the substrate, the surface density thus sharply decreases from 5.0W6.0×1019/cc which so stands from lacking such a way of treatment, and an uneven distribution is minimized, too.
COPYRIGHT: (C)1980,JPO&Japio
JP13099678A 1978-10-26 1978-10-26 Boron diffusing method Granted JPS5558523A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13099678A JPS5558523A (en) 1978-10-26 1978-10-26 Boron diffusing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13099678A JPS5558523A (en) 1978-10-26 1978-10-26 Boron diffusing method

Publications (2)

Publication Number Publication Date
JPS5558523A true JPS5558523A (en) 1980-05-01
JPS5751970B2 JPS5751970B2 (en) 1982-11-05

Family

ID=15047492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13099678A Granted JPS5558523A (en) 1978-10-26 1978-10-26 Boron diffusing method

Country Status (1)

Country Link
JP (1) JPS5558523A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2475883C1 (en) * 2011-09-16 2013-02-20 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Method for diffusion of boron in silicon

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54102965A (en) * 1978-01-31 1979-08-13 Nec Home Electronics Ltd Impurity diffusion method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54102965A (en) * 1978-01-31 1979-08-13 Nec Home Electronics Ltd Impurity diffusion method

Also Published As

Publication number Publication date
JPS5751970B2 (en) 1982-11-05

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