JPS54140461A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54140461A
JPS54140461A JP4776778A JP4776778A JPS54140461A JP S54140461 A JPS54140461 A JP S54140461A JP 4776778 A JP4776778 A JP 4776778A JP 4776778 A JP4776778 A JP 4776778A JP S54140461 A JPS54140461 A JP S54140461A
Authority
JP
Japan
Prior art keywords
wafer
radiant rays
heat treatment
irradiation
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4776778A
Other languages
Japanese (ja)
Inventor
Kenji Akeyama
Nobukatsu Tanaka
Tomie Takahashi
Keizo Inaba
Yoshikazu Yanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4776778A priority Critical patent/JPS54140461A/en
Publication of JPS54140461A publication Critical patent/JPS54140461A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To ensure a quick performance of the heat treatment for stability in the state of the wafer and thus to increase the working efficiency by irradiating the radiant rays of a fixed amount on the semiconductor element region as well as onto the wafer formed on the electrode to carry out a large amount of process.
CONSTITUTION: The radiant rays in the amount of 1 × 1012 W 5 × 1014 e/cm2 are irradiated and with the irradiation energy of more than 0.5Me to the semiconductor element region as well as onto the wafer formed on the electrode. And in case the pellets split from the wafer which received irradiation of the radiant rays or the wafer itself undergo the pellent attachment, the heat treatment of a fixed time is given at the temperature of 365°C W 420°C under the state of the wafer and with irradiation of the radiant rays. Thus, the heat treatment time can be reduced, increasing an overall working efficiency.
COPYRIGHT: (C)1979,JPO&Japio
JP4776778A 1978-04-24 1978-04-24 Manufacture of semiconductor device Pending JPS54140461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4776778A JPS54140461A (en) 1978-04-24 1978-04-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4776778A JPS54140461A (en) 1978-04-24 1978-04-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54140461A true JPS54140461A (en) 1979-10-31

Family

ID=12784515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4776778A Pending JPS54140461A (en) 1978-04-24 1978-04-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54140461A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0472736A (en) * 1990-07-13 1992-03-06 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0472736A (en) * 1990-07-13 1992-03-06 Mitsubishi Electric Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS53108776A (en) Semiconductor device
JPS51115342A (en) Solar collector pipe
JPS54140461A (en) Manufacture of semiconductor device
JPS5255033A (en) Solar heat collecting apparatus
JPS5246541A (en) Solar collector
JPS5297441A (en) Solar energy collector
JPS547860A (en) Manufacture for semiconductor device
JPS5222642A (en) Power generation device by hot water
JPS5568638A (en) Treating method of semiconductor surface with heat
JPS5211769A (en) Method of adhering semiconductor proper and semiconductor holder
JPS53145583A (en) Semiconductor device and production of the same
JPS525026A (en) Solar heat absorbent
JPS5586123A (en) Manufacture of semiconductor device
JPS5533020A (en) Manufacture of semiconductor device
JPS51121120A (en) Wind force power generator
JPS5218239A (en) Water heating equipment by applying solar heat
JPS51139251A (en) Method of manufacturing black heater
JPS5350541A (en) Solar heat collecting board
JPS5317896A (en) Drying method for inside of reactor
JPS521641A (en) Solar hot water device
JPS5364473A (en) Production of semiconductor device and its apparatus
JPS5255032A (en) Auxiliary heating apparatus for water heating apparatus by solar heat
JPS52127087A (en) Productioon of solar cell
JPS5210931A (en) Heliostat for solar heat electric generator
JPS535574A (en) Manufacture of semiconductor device