JPS5568639A - Treating method of semiconductor surface with heat - Google Patents

Treating method of semiconductor surface with heat

Info

Publication number
JPS5568639A
JPS5568639A JP14116278A JP14116278A JPS5568639A JP S5568639 A JPS5568639 A JP S5568639A JP 14116278 A JP14116278 A JP 14116278A JP 14116278 A JP14116278 A JP 14116278A JP S5568639 A JPS5568639 A JP S5568639A
Authority
JP
Japan
Prior art keywords
electron rays
semiconductor
pulse
heat
projected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14116278A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14116278A priority Critical patent/JPS5568639A/en
Publication of JPS5568639A publication Critical patent/JPS5568639A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To efficiently perform heat treatment in a short time, by projecting electron rays substantially in the form of a pulse upon the surface of a heated piece.
CONSTITUTION: Electron rays are accelerated and projected in the form of a pulse upon the surface of a semiconductor. The electron rays are controlled to a prescribed shape by electron lenses. The surface of the semiconductor is quickly heated and cooled by the projected electron rays. As a result, the removal of defects from an ion-implanted layer, conversion of an amorphous silicon layer on sapphire into single crystal or the like is efficiently caused in a short time.
COPYRIGHT: (C)1980,JPO&Japio
JP14116278A 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat Pending JPS5568639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14116278A JPS5568639A (en) 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14116278A JPS5568639A (en) 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat

Publications (1)

Publication Number Publication Date
JPS5568639A true JPS5568639A (en) 1980-05-23

Family

ID=15285567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14116278A Pending JPS5568639A (en) 1978-11-17 1978-11-17 Treating method of semiconductor surface with heat

Country Status (1)

Country Link
JP (1) JPS5568639A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130918A (en) * 1980-02-01 1981-10-14 Commissariat Energie Atomique Method of injecting semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5099088A (en) * 1973-12-27 1975-08-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5099088A (en) * 1973-12-27 1975-08-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130918A (en) * 1980-02-01 1981-10-14 Commissariat Energie Atomique Method of injecting semiconductor

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