JPS6427228A - Forming method for fine pattern of semiconductor element - Google Patents
Forming method for fine pattern of semiconductor elementInfo
- Publication number
- JPS6427228A JPS6427228A JP6917087A JP6917087A JPS6427228A JP S6427228 A JPS6427228 A JP S6427228A JP 6917087 A JP6917087 A JP 6917087A JP 6917087 A JP6917087 A JP 6917087A JP S6427228 A JPS6427228 A JP S6427228A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- light
- pattern
- mask
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To eliminate an increase in a contact or a slit larger than a pattern on a mask due to the spread of a light by simultaneously performing the steps of removing an upper layer resist and developing a lower layer resist. CONSTITUTION:A lower layer resist 12 is formed on a base substrate 11, heated to volatilize solvent, thereby obtaining a thin CMS film. Then the resist 12 is coated by a rotary coating method with a positive resist to form an upper layer resist 14, thereby obtaining a film thickness of 1-2mum. Then, the resist 14 is patterned by a mask 15 by means of a lithography method with a UV light 16. Then, with the pattern of the resist 14 as a mask the pattern of the resist 14 is transferred to the CMS of the resist 14 simultaneously by exposure of a DUV (far ultraviolet ray) light 17. Then, the resist 14 is removed, the resist 12 is developed and an interlayer 13 is removed. Thus, the oversize of a slit or a contact does not occur due to the spread of the light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6917087A JPS6427228A (en) | 1987-03-25 | 1987-03-25 | Forming method for fine pattern of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6917087A JPS6427228A (en) | 1987-03-25 | 1987-03-25 | Forming method for fine pattern of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6427228A true JPS6427228A (en) | 1989-01-30 |
Family
ID=13394970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6917087A Pending JPS6427228A (en) | 1987-03-25 | 1987-03-25 | Forming method for fine pattern of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6427228A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6333587B1 (en) * | 1998-12-11 | 2001-12-25 | Robert Bosch Gmbh | Piezoelectric actuator |
JP2010245131A (en) * | 2009-04-01 | 2010-10-28 | Jsr Corp | Pattern forming method |
-
1987
- 1987-03-25 JP JP6917087A patent/JPS6427228A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6333587B1 (en) * | 1998-12-11 | 2001-12-25 | Robert Bosch Gmbh | Piezoelectric actuator |
JP2010245131A (en) * | 2009-04-01 | 2010-10-28 | Jsr Corp | Pattern forming method |
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