JPS55113336A - Light-annealing - Google Patents

Light-annealing

Info

Publication number
JPS55113336A
JPS55113336A JP1976779A JP1976779A JPS55113336A JP S55113336 A JPS55113336 A JP S55113336A JP 1976779 A JP1976779 A JP 1976779A JP 1976779 A JP1976779 A JP 1976779A JP S55113336 A JPS55113336 A JP S55113336A
Authority
JP
Japan
Prior art keywords
light
layer
annealing
substrate
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1976779A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1976779A priority Critical patent/JPS55113336A/en
Publication of JPS55113336A publication Critical patent/JPS55113336A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To reduce the time of irradiation of light and increase the heating and annealing efficiency by annealing a semiconductor layer by irradiating light from its front and back surfaces, when a semiconductor layer formed on the surface of a dielectric substrate is annealed by light.
CONSTITUTION: By growing Si layer 2 on transparent sapphire substrate 1, a wafer of SOS structure is formed. Next, light-annealing is operated by irradiating flashlights 5 and 6 of Xe lamps from the front and back surfaces. By this, it is possible to control the intensity and amount of light reaching the boundary between substrate 1 and layer 2, so that the time of irradiation can be reduced. Consequently, the diffusion of the impurity in substrate 1 into layer 2 is reduced, so that no deterioration in the crystallization of layer 2 in the neighborhood of the boundary occurs.
COPYRIGHT: (C)1980,JPO&Japio
JP1976779A 1979-02-23 1979-02-23 Light-annealing Pending JPS55113336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1976779A JPS55113336A (en) 1979-02-23 1979-02-23 Light-annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1976779A JPS55113336A (en) 1979-02-23 1979-02-23 Light-annealing

Publications (1)

Publication Number Publication Date
JPS55113336A true JPS55113336A (en) 1980-09-01

Family

ID=12008481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1976779A Pending JPS55113336A (en) 1979-02-23 1979-02-23 Light-annealing

Country Status (1)

Country Link
JP (1) JPS55113336A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215817A (en) * 1985-07-15 1987-01-24 Nec Corp Light and heat processing method and light-intensity measuring apparatus
US5155337A (en) * 1989-12-21 1992-10-13 North Carolina State University Method and apparatus for controlling rapid thermal processing systems
JP2004200204A (en) * 2002-12-16 2004-07-15 Dainippon Screen Mfg Co Ltd Heat treatment apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (en) * 1971-08-11 1973-04-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825816A (en) * 1971-08-11 1973-04-04

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215817A (en) * 1985-07-15 1987-01-24 Nec Corp Light and heat processing method and light-intensity measuring apparatus
JPH07119647B2 (en) * 1985-07-15 1995-12-20 日本電気株式会社 Light intensity measuring device
US5155337A (en) * 1989-12-21 1992-10-13 North Carolina State University Method and apparatus for controlling rapid thermal processing systems
JP2004200204A (en) * 2002-12-16 2004-07-15 Dainippon Screen Mfg Co Ltd Heat treatment apparatus

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