JPS55113336A - Light-annealing - Google Patents
Light-annealingInfo
- Publication number
- JPS55113336A JPS55113336A JP1976779A JP1976779A JPS55113336A JP S55113336 A JPS55113336 A JP S55113336A JP 1976779 A JP1976779 A JP 1976779A JP 1976779 A JP1976779 A JP 1976779A JP S55113336 A JPS55113336 A JP S55113336A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- annealing
- substrate
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To reduce the time of irradiation of light and increase the heating and annealing efficiency by annealing a semiconductor layer by irradiating light from its front and back surfaces, when a semiconductor layer formed on the surface of a dielectric substrate is annealed by light.
CONSTITUTION: By growing Si layer 2 on transparent sapphire substrate 1, a wafer of SOS structure is formed. Next, light-annealing is operated by irradiating flashlights 5 and 6 of Xe lamps from the front and back surfaces. By this, it is possible to control the intensity and amount of light reaching the boundary between substrate 1 and layer 2, so that the time of irradiation can be reduced. Consequently, the diffusion of the impurity in substrate 1 into layer 2 is reduced, so that no deterioration in the crystallization of layer 2 in the neighborhood of the boundary occurs.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1976779A JPS55113336A (en) | 1979-02-23 | 1979-02-23 | Light-annealing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1976779A JPS55113336A (en) | 1979-02-23 | 1979-02-23 | Light-annealing |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55113336A true JPS55113336A (en) | 1980-09-01 |
Family
ID=12008481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1976779A Pending JPS55113336A (en) | 1979-02-23 | 1979-02-23 | Light-annealing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55113336A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6215817A (en) * | 1985-07-15 | 1987-01-24 | Nec Corp | Light and heat processing method and light-intensity measuring apparatus |
US5155337A (en) * | 1989-12-21 | 1992-10-13 | North Carolina State University | Method and apparatus for controlling rapid thermal processing systems |
JP2004200204A (en) * | 2002-12-16 | 2004-07-15 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4825816A (en) * | 1971-08-11 | 1973-04-04 |
-
1979
- 1979-02-23 JP JP1976779A patent/JPS55113336A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4825816A (en) * | 1971-08-11 | 1973-04-04 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6215817A (en) * | 1985-07-15 | 1987-01-24 | Nec Corp | Light and heat processing method and light-intensity measuring apparatus |
JPH07119647B2 (en) * | 1985-07-15 | 1995-12-20 | 日本電気株式会社 | Light intensity measuring device |
US5155337A (en) * | 1989-12-21 | 1992-10-13 | North Carolina State University | Method and apparatus for controlling rapid thermal processing systems |
JP2004200204A (en) * | 2002-12-16 | 2004-07-15 | Dainippon Screen Mfg Co Ltd | Heat treatment apparatus |
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