JPS57100721A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57100721A
JPS57100721A JP17682980A JP17682980A JPS57100721A JP S57100721 A JPS57100721 A JP S57100721A JP 17682980 A JP17682980 A JP 17682980A JP 17682980 A JP17682980 A JP 17682980A JP S57100721 A JPS57100721 A JP S57100721A
Authority
JP
Japan
Prior art keywords
single crystal
layer
semiconductor
region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17682980A
Other languages
Japanese (ja)
Inventor
Moriya Nakahara
Hiroyuki Tango
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17682980A priority Critical patent/JPS57100721A/en
Publication of JPS57100721A publication Critical patent/JPS57100721A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To mass-produce semiconductor devices having high performance without automatic doping of impurity from a substrate with a mixture of a single crystal semiconductor layer region and a polycrystalline semiconductor layer region by selectively emitting an energy beam to the semiconductor layers on a single crystal insulating substrate. CONSTITUTION:In the manufacture of a semiconductor, a polycrystalline silicon layer 102 is, for example, laminated by a CVD method on a sapphire substrate 101, silicon ions are implanted to enhance the absorbing effect of the energy beam, and subsequently a laser beam is emitted directly in a spot manner to the region of the layer 102. The emitted part is molten and resolidified in a short time, but since the primary base is a single crystal sapphire substrate 101, it becomes single crystal silicon with the result that the insular single crystal silicon layer 103 of the layer 102 is formed.
JP17682980A 1980-12-15 1980-12-15 Manufacture of semiconductor device Pending JPS57100721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17682980A JPS57100721A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17682980A JPS57100721A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57100721A true JPS57100721A (en) 1982-06-23

Family

ID=16020561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17682980A Pending JPS57100721A (en) 1980-12-15 1980-12-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57100721A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961118A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
WO1985004731A1 (en) * 1984-04-09 1985-10-24 Hosiden Electronics Co., Ltd. Liquid crystal display element and a method of producing the same
US4552595A (en) * 1983-05-13 1985-11-12 Oki Electric Industry Co., Ltd. Method of manufacturing a semiconductor substrate having dielectric regions

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961118A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
US4552595A (en) * 1983-05-13 1985-11-12 Oki Electric Industry Co., Ltd. Method of manufacturing a semiconductor substrate having dielectric regions
WO1985004731A1 (en) * 1984-04-09 1985-10-24 Hosiden Electronics Co., Ltd. Liquid crystal display element and a method of producing the same

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