JPS56111270A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56111270A
JPS56111270A JP1243880A JP1243880A JPS56111270A JP S56111270 A JPS56111270 A JP S56111270A JP 1243880 A JP1243880 A JP 1243880A JP 1243880 A JP1243880 A JP 1243880A JP S56111270 A JPS56111270 A JP S56111270A
Authority
JP
Japan
Prior art keywords
layer
film
gaas
energy rays
photoreceiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1243880A
Other languages
Japanese (ja)
Inventor
Yasuo Tarui
Koichiro Ootori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1243880A priority Critical patent/JPS56111270A/en
Publication of JPS56111270A publication Critical patent/JPS56111270A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

PURPOSE:To enable realization of a multilayer structure wherein different kinds of semiconductors required for a highly efficient photoreceiving element and the like are composed in an ohmic contact and to facilitate crystallization thereof by applying energy rays such as light and electron beams thereto. CONSTITUTION:A metal film 6 of In is provided on an n<+> P structure of Si, whereon a p type GaAs layer 2b and an SiO2 film 4 as a film for preventing vaporization of GaAs are further formed sequentially. Subsequently, by scanning the surface side of the layer 2b by means of energy rays 7 such as laser beams, the layer 2b and the film 6 are melted and resolidified in a short time, whereby a contact layer 3 is formed. Simultaneously, the layer 2b is made to be a layer of single crystal or polycrystal having a large diameter of particle. Following to this, S as n type impurity for GaAs is made to pass through the film 4 for injection of an ion into the layer 2b, thereby an n<+> type GaAs layer being formed. In this way, the photoreceiving element of high efficiency can be realized.
JP1243880A 1980-02-06 1980-02-06 Manufacture of semiconductor device Pending JPS56111270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1243880A JPS56111270A (en) 1980-02-06 1980-02-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1243880A JPS56111270A (en) 1980-02-06 1980-02-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56111270A true JPS56111270A (en) 1981-09-02

Family

ID=11805301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1243880A Pending JPS56111270A (en) 1980-02-06 1980-02-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111270A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177172A2 (en) * 1984-08-29 1986-04-09 Varian Associates, Inc. Monolithic semiconductor
WO2012120869A1 (en) * 2011-03-07 2012-09-13 住友化学株式会社 Semiconductor substrate, semiconductor device, and method for producing semiconductor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247673A (en) * 1975-10-15 1977-04-15 Hitachi Ltd Process for production of silicon crystal film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247673A (en) * 1975-10-15 1977-04-15 Hitachi Ltd Process for production of silicon crystal film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177172A2 (en) * 1984-08-29 1986-04-09 Varian Associates, Inc. Monolithic semiconductor
WO2012120869A1 (en) * 2011-03-07 2012-09-13 住友化学株式会社 Semiconductor substrate, semiconductor device, and method for producing semiconductor substrate
US8901605B2 (en) 2011-03-07 2014-12-02 National Institute Of Advanced Industrial Science And Technology Semiconductor wafer, semiconductor device, and method of producing semiconductor wafer

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