JPS56111213A - Preparation of thin film semiconductor device - Google Patents
Preparation of thin film semiconductor deviceInfo
- Publication number
- JPS56111213A JPS56111213A JP15580A JP15580A JPS56111213A JP S56111213 A JPS56111213 A JP S56111213A JP 15580 A JP15580 A JP 15580A JP 15580 A JP15580 A JP 15580A JP S56111213 A JPS56111213 A JP S56111213A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- semiconductor device
- thin film
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 150000002894 organic compounds Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To prevent the deformation of the substrate, by forming a single crystal by means of laser radiation the polycrystalline or amorphous Si film stacked on the substrate by providing a photoreflective film through a dielectric film. CONSTITUTION:On the substrate 10, glass or some organic compound whose melting point is lower than that of Si, an Al reflective film is evaporated and further an SiO2 12 and an amorphous or a polycrystalline Si thin film 13 are stacked. A conversion into a single crystal is performed by laser radiation 14. At this time, because the laser beam is reflected by the reflective film 11, the temperature of the substrate 11 is not elevated. The reflected element heats the Si film effectively. With such an arrangement, the materials with lower melting point, lower softening point and degradation at lower temperature can be made use of to lower the cost, and the semiconductor device can be formed on a flexible sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15580A JPS56111213A (en) | 1980-01-07 | 1980-01-07 | Preparation of thin film semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15580A JPS56111213A (en) | 1980-01-07 | 1980-01-07 | Preparation of thin film semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56111213A true JPS56111213A (en) | 1981-09-02 |
Family
ID=11466147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15580A Pending JPS56111213A (en) | 1980-01-07 | 1980-01-07 | Preparation of thin film semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56111213A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5837927A (en) * | 1981-08-28 | 1983-03-05 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS60127745A (en) * | 1983-12-14 | 1985-07-08 | Matsushita Electric Ind Co Ltd | Semiconductor substrate |
-
1980
- 1980-01-07 JP JP15580A patent/JPS56111213A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5837927A (en) * | 1981-08-28 | 1983-03-05 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPH0221144B2 (en) * | 1981-08-28 | 1990-05-11 | Matsushita Electric Ind Co Ltd | |
| JPS60127745A (en) * | 1983-12-14 | 1985-07-08 | Matsushita Electric Ind Co Ltd | Semiconductor substrate |
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