JPS5658268A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5658268A JPS5658268A JP13356579A JP13356579A JPS5658268A JP S5658268 A JPS5658268 A JP S5658268A JP 13356579 A JP13356579 A JP 13356579A JP 13356579 A JP13356579 A JP 13356579A JP S5658268 A JPS5658268 A JP S5658268A
- Authority
- JP
- Japan
- Prior art keywords
- film
- monocrystal
- layer
- substrate
- polycrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000001052 transient effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To obtain a substrate suitable for MIS structure by a mechanism wherein a polycrystal or amorphous Si film is coated on a conductor substrate through an insulator layer and changed into monocrystals by means of heat treatment for a short time in an extent causing no interface reaction when forming a monocrystal semiconductor film onto the insulating film. CONSTITUTION:An SiO2 film 2 is grown on an Si layer 5 having low resistance, and a polycrystal or amorphous Si film 6 is formed on the film 2 by means of chemical vapor deposition. The film 6 is provided with transient radiation for a short time by using laser rays, electron rays, etc. and annealed, and the film 6 is changed into the monocrystal Si film 6. Consequently, the Si layer 5 is used as a gate electrode, the SiO2 film 2 as a gate insulating film and the monocrystal Si film 6 as a substrate and an element of MIS structure is prepared. Thus, interface charges are not generated between the films 2 and 6, and the element having excellent characteristics can be obtained. And these laminates are stacked only by the desired number of stages, and a sandwich structure may be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13356579A JPS5658268A (en) | 1979-10-18 | 1979-10-18 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13356579A JPS5658268A (en) | 1979-10-18 | 1979-10-18 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5658268A true JPS5658268A (en) | 1981-05-21 |
JPH022308B2 JPH022308B2 (en) | 1990-01-17 |
Family
ID=15107767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13356579A Granted JPS5658268A (en) | 1979-10-18 | 1979-10-18 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5658268A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07237062A (en) * | 1988-02-08 | 1995-09-12 | Gerber Syst Corp | Lightweight table and preparation thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503787A (en) * | 1973-05-16 | 1975-01-16 |
-
1979
- 1979-10-18 JP JP13356579A patent/JPS5658268A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503787A (en) * | 1973-05-16 | 1975-01-16 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07237062A (en) * | 1988-02-08 | 1995-09-12 | Gerber Syst Corp | Lightweight table and preparation thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH022308B2 (en) | 1990-01-17 |
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