JPS5658268A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5658268A
JPS5658268A JP13356579A JP13356579A JPS5658268A JP S5658268 A JPS5658268 A JP S5658268A JP 13356579 A JP13356579 A JP 13356579A JP 13356579 A JP13356579 A JP 13356579A JP S5658268 A JPS5658268 A JP S5658268A
Authority
JP
Japan
Prior art keywords
film
monocrystal
layer
substrate
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13356579A
Other languages
Japanese (ja)
Other versions
JPH022308B2 (en
Inventor
Koichiro Ootori
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13356579A priority Critical patent/JPS5658268A/en
Publication of JPS5658268A publication Critical patent/JPS5658268A/en
Publication of JPH022308B2 publication Critical patent/JPH022308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a substrate suitable for MIS structure by a mechanism wherein a polycrystal or amorphous Si film is coated on a conductor substrate through an insulator layer and changed into monocrystals by means of heat treatment for a short time in an extent causing no interface reaction when forming a monocrystal semiconductor film onto the insulating film. CONSTITUTION:An SiO2 film 2 is grown on an Si layer 5 having low resistance, and a polycrystal or amorphous Si film 6 is formed on the film 2 by means of chemical vapor deposition. The film 6 is provided with transient radiation for a short time by using laser rays, electron rays, etc. and annealed, and the film 6 is changed into the monocrystal Si film 6. Consequently, the Si layer 5 is used as a gate electrode, the SiO2 film 2 as a gate insulating film and the monocrystal Si film 6 as a substrate and an element of MIS structure is prepared. Thus, interface charges are not generated between the films 2 and 6, and the element having excellent characteristics can be obtained. And these laminates are stacked only by the desired number of stages, and a sandwich structure may be formed.
JP13356579A 1979-10-18 1979-10-18 Semiconductor device Granted JPS5658268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13356579A JPS5658268A (en) 1979-10-18 1979-10-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13356579A JPS5658268A (en) 1979-10-18 1979-10-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5658268A true JPS5658268A (en) 1981-05-21
JPH022308B2 JPH022308B2 (en) 1990-01-17

Family

ID=15107767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13356579A Granted JPS5658268A (en) 1979-10-18 1979-10-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5658268A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07237062A (en) * 1988-02-08 1995-09-12 Gerber Syst Corp Lightweight table and preparation thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503787A (en) * 1973-05-16 1975-01-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503787A (en) * 1973-05-16 1975-01-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07237062A (en) * 1988-02-08 1995-09-12 Gerber Syst Corp Lightweight table and preparation thereof

Also Published As

Publication number Publication date
JPH022308B2 (en) 1990-01-17

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