JPS55123133A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55123133A
JPS55123133A JP2998179A JP2998179A JPS55123133A JP S55123133 A JPS55123133 A JP S55123133A JP 2998179 A JP2998179 A JP 2998179A JP 2998179 A JP2998179 A JP 2998179A JP S55123133 A JPS55123133 A JP S55123133A
Authority
JP
Japan
Prior art keywords
insulating film
sio2
film
pulse
made compact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2998179A
Other languages
Japanese (ja)
Other versions
JPS6223453B2 (en
Inventor
Koichiro Ootori
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2998179A priority Critical patent/JPS55123133A/en
Publication of JPS55123133A publication Critical patent/JPS55123133A/en
Publication of JPS6223453B2 publication Critical patent/JPS6223453B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a quality insulating film by a method wherein an insulating film is provided on the surface of a semiconductor at low temperatures not to cause a surface reaction, and the insulating film is made compact by applying energy ray during time length short enough as to prevent surface reaction from developing. CONSTITUTION:After providing an SiO2 film on the surface of an Si substrate according to CVD process, a pulse of electron beam is applied with an energy according to the film thickness. The surface temperature of a sample rises instantaneously up to about 1,000 deg.C, and thus SiO2 is made compact. Since the sample temperature suddenly drops after applying the pulse, a surface reaction to produce unreacted Si does not develop and a surface charge does not occur, too. In the case of GaAs substrate, the SiO2 film extremely compact and superior in surface characteristic can be layered in the same way.
JP2998179A 1979-03-16 1979-03-16 Manufacture of semiconductor device Granted JPS55123133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2998179A JPS55123133A (en) 1979-03-16 1979-03-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2998179A JPS55123133A (en) 1979-03-16 1979-03-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55123133A true JPS55123133A (en) 1980-09-22
JPS6223453B2 JPS6223453B2 (en) 1987-05-22

Family

ID=12291129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2998179A Granted JPS55123133A (en) 1979-03-16 1979-03-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55123133A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898933A (en) * 1981-12-09 1983-06-13 Seiko Epson Corp Manufacture of semiconductor device
JPS60211843A (en) * 1984-04-05 1985-10-24 Fuji Electric Corp Res & Dev Ltd Forming method of insulating film pattern
JPS60211844A (en) * 1984-04-05 1985-10-24 Fuji Electric Corp Res & Dev Ltd Forming method of insulating film
JP2007208297A (en) * 2007-05-09 2007-08-16 Renesas Technology Corp Semiconductor integrated circuit device and method of manufacturing the same
JP2007281494A (en) * 2007-05-09 2007-10-25 Renesas Technology Corp Semiconductor integrated circuit device, and its manufacturing method
JP2011228718A (en) * 2011-05-23 2011-11-10 Renesas Electronics Corp Semiconductor integrated circuit device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836599A (en) * 1971-09-13 1973-05-30
JPS5352058A (en) * 1976-10-22 1978-05-12 Hitachi Ltd Formation of p-type layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836599A (en) * 1971-09-13 1973-05-30
JPS5352058A (en) * 1976-10-22 1978-05-12 Hitachi Ltd Formation of p-type layer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898933A (en) * 1981-12-09 1983-06-13 Seiko Epson Corp Manufacture of semiconductor device
JPS60211843A (en) * 1984-04-05 1985-10-24 Fuji Electric Corp Res & Dev Ltd Forming method of insulating film pattern
JPS60211844A (en) * 1984-04-05 1985-10-24 Fuji Electric Corp Res & Dev Ltd Forming method of insulating film
JP2007208297A (en) * 2007-05-09 2007-08-16 Renesas Technology Corp Semiconductor integrated circuit device and method of manufacturing the same
JP2007281494A (en) * 2007-05-09 2007-10-25 Renesas Technology Corp Semiconductor integrated circuit device, and its manufacturing method
JP2011228718A (en) * 2011-05-23 2011-11-10 Renesas Electronics Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS6223453B2 (en) 1987-05-22

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