JPS5664442A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5664442A
JPS5664442A JP14072979A JP14072979A JPS5664442A JP S5664442 A JPS5664442 A JP S5664442A JP 14072979 A JP14072979 A JP 14072979A JP 14072979 A JP14072979 A JP 14072979A JP S5664442 A JPS5664442 A JP S5664442A
Authority
JP
Japan
Prior art keywords
si3n4
film
sio
gaas
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14072979A
Other languages
Japanese (ja)
Inventor
Kazuo Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14072979A priority Critical patent/JPS5664442A/en
Publication of JPS5664442A publication Critical patent/JPS5664442A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain an Si3N4 film of high quality without dissociation or evaporation of As by laminating the Si3N4 through an SiO on the surface of a semiconductor material having As as an ingredient element. CONSTITUTION:The Si3N4 is a stable insulating film and incorporates approximately double of a refractive index. Thus, the Si3N4 is effective for the reflection preventing film of a solar battery formed of a material having approx. 4 of refractive index such as GaAs or the like. However, it requires high temperature higher than 700 deg.C to form of silane and NH3. On the other hand, since a material having As as an ingredient element such as GaAs incorporates high vapor pressure of As, if the temperature exceeds 600 deg.C, the As is dissociated and evaporated to thus cause a defect on the surface. Therefore, the conventional reflection preventing SiO film is unstable, but when the Si3N4 is laminated thereon and the evaporation of the As is prevented by the SiO by means of a heat decomposition process with a temperature higher than 700 deg.C, thereby obtaining the Si3N4. Thus the surface can be stabilized and the reliability can be improved.
JP14072979A 1979-10-30 1979-10-30 Manufacture of semiconductor device Pending JPS5664442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14072979A JPS5664442A (en) 1979-10-30 1979-10-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14072979A JPS5664442A (en) 1979-10-30 1979-10-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5664442A true JPS5664442A (en) 1981-06-01

Family

ID=15275344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14072979A Pending JPS5664442A (en) 1979-10-30 1979-10-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5664442A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826014A (en) * 1981-07-31 1983-02-16 Agency Of Ind Science & Technol Formation of silicon nitride film
JPS63503184A (en) * 1986-05-02 1988-11-17 エイ・ティ・アンド・ティ・コーポレーション Manufacturing of semiconductor devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946678A (en) * 1972-09-06 1974-05-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946678A (en) * 1972-09-06 1974-05-04

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826014A (en) * 1981-07-31 1983-02-16 Agency Of Ind Science & Technol Formation of silicon nitride film
JPS6310893B2 (en) * 1981-07-31 1988-03-10 Kogyo Gijutsuin
JPS63503184A (en) * 1986-05-02 1988-11-17 エイ・ティ・アンド・ティ・コーポレーション Manufacturing of semiconductor devices

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