JPS5694622A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5694622A
JPS5694622A JP17169979A JP17169979A JPS5694622A JP S5694622 A JPS5694622 A JP S5694622A JP 17169979 A JP17169979 A JP 17169979A JP 17169979 A JP17169979 A JP 17169979A JP S5694622 A JPS5694622 A JP S5694622A
Authority
JP
Japan
Prior art keywords
film
substrate
amorphous
constitution
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17169979A
Other languages
Japanese (ja)
Inventor
Hiroshi Ito
Koji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17169979A priority Critical patent/JPS5694622A/en
Publication of JPS5694622A publication Critical patent/JPS5694622A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a desired element by forming an amorphous semiconductor film on a prescribed substrate and by heating the same selectively by application of a laser beam to convert it into crystalline structure. CONSTITUTION:An Si substrate is provided in opposition to a silica glass substrate 1, PH3 is added into Ar, and a nearly-insulated amorphous Si film 2 containing P is prepared by the glow discharge of SiH4 generated by application of high-frequency electric power. Then, a metallic mask 3 being given to the film, the Ar-ion laser beam is applied thereto selectively, whereby it is heated and converted into a single crystal 4. When the desired element is formed on the film 4, the amorphous Si film 2 is left as an element separating layer. By this constitution, a glass plate is sufficient for the device, with no expensive substrate such as sapphire in SOS being required, and thus the cost for the device can be reduced.
JP17169979A 1979-12-27 1979-12-27 Manufacture of semiconductor device Pending JPS5694622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17169979A JPS5694622A (en) 1979-12-27 1979-12-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17169979A JPS5694622A (en) 1979-12-27 1979-12-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5694622A true JPS5694622A (en) 1981-07-31

Family

ID=15928034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17169979A Pending JPS5694622A (en) 1979-12-27 1979-12-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5694622A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284554A (en) * 1985-10-08 1987-04-18 Agency Of Ind Science & Technol Semiconductor device
WO2001059818A1 (en) * 2000-02-09 2001-08-16 Robert Bosch Gmbh Method for producing defined polycrystalline silicon areas in an amorphous silicon layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284554A (en) * 1985-10-08 1987-04-18 Agency Of Ind Science & Technol Semiconductor device
WO2001059818A1 (en) * 2000-02-09 2001-08-16 Robert Bosch Gmbh Method for producing defined polycrystalline silicon areas in an amorphous silicon layer
US7012026B2 (en) 2000-02-09 2006-03-14 Robert Bosch Gmbh Method for producing defined polycrystalline silicon areas in an amorphous silicon layer

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