JPS5710982A - Amorphous semiconductor thin film - Google Patents

Amorphous semiconductor thin film

Info

Publication number
JPS5710982A
JPS5710982A JP8571180A JP8571180A JPS5710982A JP S5710982 A JPS5710982 A JP S5710982A JP 8571180 A JP8571180 A JP 8571180A JP 8571180 A JP8571180 A JP 8571180A JP S5710982 A JPS5710982 A JP S5710982A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
amorphous semiconductor
film
dopants
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8571180A
Other languages
Japanese (ja)
Inventor
Tsuneo Tanaka
Seiichi Nagata
Koshiro Mori
Shinichiro Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8571180A priority Critical patent/JPS5710982A/en
Publication of JPS5710982A publication Critical patent/JPS5710982A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To compose an amorphous semiconductor thin film having high temperature dark conductivity by including at least a kind of hydrogen or halogen element in a film wherein at least a kind of Al, Ga, In is also included in the film. CONSTITUTION:At least a kind of hydrogen or halogen element and at least a kind of Al, Ga, In are included in an amorphous semiconductor thin film such as tetrahedral amorphous silicon. High-purity poly-crystal Si is used as a target 20. As dopants 21, in the case of Al, a high-purity Al wire cut by 1cm is used and in the case of Ga, a chip applied Ga on monocrystal Si is used and such dopants 21 are arranged at suitable intervals, while a-si doped Al or Ga is superposed on a substrate 22 by performing simultaneous sputtering at Ar:H2=3:1, with pressure 0.01 Torr.
JP8571180A 1980-06-24 1980-06-24 Amorphous semiconductor thin film Pending JPS5710982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8571180A JPS5710982A (en) 1980-06-24 1980-06-24 Amorphous semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8571180A JPS5710982A (en) 1980-06-24 1980-06-24 Amorphous semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS5710982A true JPS5710982A (en) 1982-01-20

Family

ID=13866406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8571180A Pending JPS5710982A (en) 1980-06-24 1980-06-24 Amorphous semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS5710982A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161380A (en) * 1982-03-19 1983-09-24 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5983916A (en) * 1982-11-01 1984-05-15 Kanegafuchi Chem Ind Co Ltd Amorphous multielement semiconductor
JP2004297008A (en) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology P-type semiconductor material, its manufacturing method, its manufacturing device, photoelectric conversion element, light emitting device, and thin film transistor
JP2005268482A (en) * 2004-03-18 2005-09-29 Toppan Printing Co Ltd Non-single crystal solar cell, and manufacturing method and apparatus of p type semiconductor material
JP2005268481A (en) * 2004-03-18 2005-09-29 Toppan Printing Co Ltd Non-single crystal solar cell and apparatus for manufacturing p type semiconductor material

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161380A (en) * 1982-03-19 1983-09-24 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5983916A (en) * 1982-11-01 1984-05-15 Kanegafuchi Chem Ind Co Ltd Amorphous multielement semiconductor
JP2004297008A (en) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology P-type semiconductor material, its manufacturing method, its manufacturing device, photoelectric conversion element, light emitting device, and thin film transistor
JP2005268482A (en) * 2004-03-18 2005-09-29 Toppan Printing Co Ltd Non-single crystal solar cell, and manufacturing method and apparatus of p type semiconductor material
JP2005268481A (en) * 2004-03-18 2005-09-29 Toppan Printing Co Ltd Non-single crystal solar cell and apparatus for manufacturing p type semiconductor material
JP4691889B2 (en) * 2004-03-18 2011-06-01 凸版印刷株式会社 Non-single crystal solar cell and method of manufacturing non-single crystal solar cell

Similar Documents

Publication Publication Date Title
EP0962963A4 (en) Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
GB1529139A (en) Photovoltaic cell and a method of manufacturing such a cell
JPS5710982A (en) Amorphous semiconductor thin film
EP0203578A3 (en) Semiconductor device having epitaxial insulating film and method of producing the same
JPS5737827A (en) Manufacture of semiconductor device
JPS575328A (en) Growing method for semiconductor crystal
Milnes et al. Peeled film technology for solar cells
JPS5336182A (en) Thin semiconductor single crystal film forming insulation substrate
JPS57196542A (en) Semiconductor integrated circuit device and manufacture thereof
JPS6442813A (en) Thin film single crystal substrate
JPS5282087A (en) Production of solar cell
JPS574155A (en) Semiconductor device
JPS52120764A (en) Manufacture of semiconductor device on insulator substrate
JPS574115A (en) Manufacture of junction of semiconductors
JPS56105625A (en) Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density
JPS5379384A (en) Forming method of polycrystalline gaas thin film and stabilizing method ofsemiconductor of semiconductor
JPS5436192A (en) Manufacture for semiconductor
JPS5623737A (en) Manufacture of buried type semiconductor element substrate
JPS53122361A (en) Manufacture for single crystal silicon thin film
JPS57159020A (en) Manufacture of semiconductor device
JPS57194519A (en) Method of crystal growth
JPS5322382A (en) Production of dielectric isolating substrate
JPS5721814A (en) Manufacture of semiconductor device
JPS57178394A (en) Manufacture of semiconductor light emitting device
JPS57204117A (en) Semiconductor device and manufacture