JPS574115A - Manufacture of junction of semiconductors - Google Patents
Manufacture of junction of semiconductorsInfo
- Publication number
- JPS574115A JPS574115A JP7715180A JP7715180A JPS574115A JP S574115 A JPS574115 A JP S574115A JP 7715180 A JP7715180 A JP 7715180A JP 7715180 A JP7715180 A JP 7715180A JP S574115 A JPS574115 A JP S574115A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- junction
- substrate
- type
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thyristors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To obtain a flat p-n junction of semiconductors on the surface of a semiconductor substrate being exposed in an opening by a method wherein an insulating film is adhered on the substrate, the opening is formed at a junction forming region, an electrode layer consisted of a semiconductor material for formation of a growth layer and a material to decide the type of conduction thereof is accumulated on the whole surface containing the opening and a heat treatment is performed. CONSTITUTION:The SiO2 film 2 is adhered on the n type Si substrate 1, and the opening is formed in the p-n junction forming region. The Al electrode layer 14 containing Si in Al is accumulated on the whole surface thereof containing the opening, the heat treatment is performed at about 500 deg.C to make Si in the electrode layer 14 to grow liquid phase epitaxially in the opening part on the substrate 1 to make a p type crystal growth layer 13 containing Al of about 2X 10<18>cm<-3> as an impurity to grow. Accordingly the flat p-n junction is formed at the interface between the surface of the n type Si substrate 1 and the p type crystal growth layer 13. Namely because the face of the p-n junction is formed on the surface without being sunk in the substrate 1, it has no curved face, and deterioration of withstand voltage is not generated. Moreover because the pattern of junction is formed in accordance with the size of the opening, the pattern of the desired shape can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7715180A JPS574115A (en) | 1980-06-10 | 1980-06-10 | Manufacture of junction of semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7715180A JPS574115A (en) | 1980-06-10 | 1980-06-10 | Manufacture of junction of semiconductors |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS574115A true JPS574115A (en) | 1982-01-09 |
Family
ID=13625783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7715180A Pending JPS574115A (en) | 1980-06-10 | 1980-06-10 | Manufacture of junction of semiconductors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS574115A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59151416A (en) * | 1983-02-17 | 1984-08-29 | Agency Of Ind Science & Technol | Fabrication of semiconductor crystal thin film |
-
1980
- 1980-06-10 JP JP7715180A patent/JPS574115A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59151416A (en) * | 1983-02-17 | 1984-08-29 | Agency Of Ind Science & Technol | Fabrication of semiconductor crystal thin film |
JPH0136690B2 (en) * | 1983-02-17 | 1989-08-02 | Kogyo Gijutsuin |
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