JPS6466932A - Epitaxial silicon wafer - Google Patents
Epitaxial silicon waferInfo
- Publication number
- JPS6466932A JPS6466932A JP22360687A JP22360687A JPS6466932A JP S6466932 A JPS6466932 A JP S6466932A JP 22360687 A JP22360687 A JP 22360687A JP 22360687 A JP22360687 A JP 22360687A JP S6466932 A JPS6466932 A JP S6466932A
- Authority
- JP
- Japan
- Prior art keywords
- approximately
- impurity concentration
- type
- substrate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To enable microwave heating, to inhibit substrate currents, to prevent the variation and deterioration of performance and to shorten a manufacturing process by forming a single crystal silicon substrate having specific impurity concentration, a specific high impurity concentration region shaping the surface layer section of the substrate and an epitaxial silicon layer. CONSTITUTION:A P-type region, which is shaped by using boron as an impurity and which has impurity concentration of approximately 10<18>-10<19>cm<-3>, depth of approximately 10-100mum and high concentration, a P<+> type region 2, is formed to the surface layer on the main surface side of a P-type substrate, which has impurity concentration in a 10<15>-10<16>cm<-3> order, resistivity of approximately 10-20OMEGAcm, thickness of approximately 0.5-1mm and low impurity concentration, a P<-> type silicon substrate 1, as a high impurity concentration region. A P-type epitaxial silicon layer 3 adapted for shaping a device and having resistivity of approximately 8-12OMEGAcm and thickness of approximately 10-20mum is laminated onto the main surface, the P<+> type region 2, of said P<-> type silicon substrate 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22360687A JPS6466932A (en) | 1987-09-07 | 1987-09-07 | Epitaxial silicon wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22360687A JPS6466932A (en) | 1987-09-07 | 1987-09-07 | Epitaxial silicon wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6466932A true JPS6466932A (en) | 1989-03-13 |
Family
ID=16800825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22360687A Pending JPS6466932A (en) | 1987-09-07 | 1987-09-07 | Epitaxial silicon wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6466932A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03245568A (en) * | 1990-02-23 | 1991-11-01 | Sanyo Electric Co Ltd | Solid-state image sensing element |
JPH03250765A (en) * | 1990-02-28 | 1991-11-08 | Sanyo Electric Co Ltd | Solid-state image sensing element |
JPH06163556A (en) * | 1992-11-26 | 1994-06-10 | Nec Corp | Semiconductor device |
JP2005175251A (en) * | 2003-12-12 | 2005-06-30 | Matsushita Electric Ind Co Ltd | Semiconductor wafer and manufacturing method thereof |
KR100579217B1 (en) * | 1999-10-26 | 2006-05-11 | 주식회사 실트론 | Method of manufacturing on p/p+ epitaxial wafers by means of low energy ion implantation |
JPWO2004086488A1 (en) * | 2003-03-26 | 2006-06-29 | コマツ電子金属株式会社 | Semiconductor epitaxial wafer |
JP2015002329A (en) * | 2013-06-18 | 2015-01-05 | シャープ株式会社 | Epitaxial wafer, method for manufacturing the same, and nitride semiconductor device |
JP2015008314A (en) * | 2014-08-14 | 2015-01-15 | 株式会社Sumco | Method of producing epitaxial wafer and epitaxial wafer |
-
1987
- 1987-09-07 JP JP22360687A patent/JPS6466932A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03245568A (en) * | 1990-02-23 | 1991-11-01 | Sanyo Electric Co Ltd | Solid-state image sensing element |
JPH03250765A (en) * | 1990-02-28 | 1991-11-08 | Sanyo Electric Co Ltd | Solid-state image sensing element |
JPH06163556A (en) * | 1992-11-26 | 1994-06-10 | Nec Corp | Semiconductor device |
KR100579217B1 (en) * | 1999-10-26 | 2006-05-11 | 주식회사 실트론 | Method of manufacturing on p/p+ epitaxial wafers by means of low energy ion implantation |
JPWO2004086488A1 (en) * | 2003-03-26 | 2006-06-29 | コマツ電子金属株式会社 | Semiconductor epitaxial wafer |
JP2005175251A (en) * | 2003-12-12 | 2005-06-30 | Matsushita Electric Ind Co Ltd | Semiconductor wafer and manufacturing method thereof |
JP2015002329A (en) * | 2013-06-18 | 2015-01-05 | シャープ株式会社 | Epitaxial wafer, method for manufacturing the same, and nitride semiconductor device |
JP2015008314A (en) * | 2014-08-14 | 2015-01-15 | 株式会社Sumco | Method of producing epitaxial wafer and epitaxial wafer |
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