JPS6482648A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6482648A
JPS6482648A JP24111587A JP24111587A JPS6482648A JP S6482648 A JPS6482648 A JP S6482648A JP 24111587 A JP24111587 A JP 24111587A JP 24111587 A JP24111587 A JP 24111587A JP S6482648 A JPS6482648 A JP S6482648A
Authority
JP
Japan
Prior art keywords
bipolar
buried layer
layer
depth
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24111587A
Other languages
Japanese (ja)
Inventor
Norie Hanaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP24111587A priority Critical patent/JPS6482648A/en
Publication of JPS6482648A publication Critical patent/JPS6482648A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the performance of a bipolar transistor without loss of the performance of other hybrid element by decreasing the depth of the transistor to a buried layer as compared with the buried layer of a MOSFET. CONSTITUTION:A semiconductor substrate 1 has an N<+> type buried layer, and a MOSFET is formed commonly in the same depth as a bipolar transistor. After an epitaxial layer 4 is grown on a buried layer 2, N-type impurity is further ion implanted on the layer 2 only in its bipolar section, and a second N<+> type buried layer 14 is formed. Thus, the thickness of the epitaxial layer of the bipolar section is reduced. That is, the depth from the surface to the N<+> type buried layer is reduced. Thus, a bipolar element can be accelerated without deteriorating element characteristics except the bipolar.
JP24111587A 1987-09-25 1987-09-25 Semiconductor device Pending JPS6482648A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24111587A JPS6482648A (en) 1987-09-25 1987-09-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24111587A JPS6482648A (en) 1987-09-25 1987-09-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6482648A true JPS6482648A (en) 1989-03-28

Family

ID=17069506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24111587A Pending JPS6482648A (en) 1987-09-25 1987-09-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6482648A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02128643A (en) * 1988-11-04 1990-05-17 Fuji Oil Co Ltd Pastry dough, preparation thereof and pastry

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02128643A (en) * 1988-11-04 1990-05-17 Fuji Oil Co Ltd Pastry dough, preparation thereof and pastry

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