JPS6482565A - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
JPS6482565A
JPS6482565A JP62241839A JP24183987A JPS6482565A JP S6482565 A JPS6482565 A JP S6482565A JP 62241839 A JP62241839 A JP 62241839A JP 24183987 A JP24183987 A JP 24183987A JP S6482565 A JPS6482565 A JP S6482565A
Authority
JP
Japan
Prior art keywords
conductivity type
epitaxial layer
resistance
impurity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62241839A
Other languages
Japanese (ja)
Other versions
JPH0734470B2 (en
Inventor
Hiroyasu Hagino
Hiroshi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62241839A priority Critical patent/JPH0734470B2/en
Priority to DE3851815T priority patent/DE3851815T2/en
Priority to EP88111722A priority patent/EP0308612B1/en
Publication of JPS6482565A publication Critical patent/JPS6482565A/en
Publication of JPH0734470B2 publication Critical patent/JPH0734470B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce sufficiently ON resistance, by constituting a gentle concentration distribution of impurity, between a second conductivity type substrate of low resistance using impurity like phosphorus, and an epitaxial layer, making the thickness of the epitaxial layer thin, and forming an N-type semiconductor layer of low resistance sandwiched by first conductivity type base layers. CONSTITUTION:For a second conductivity type substrate 11 of low resistance, phosphorus as impurity, which largely protrudes in a second conductivity type epitaxial layer 22 of high resistance, is used. The substrate 11 is made to largely protrude in the epitaxial layer 22 side, and a protruding part 12 is formed to constitute a gentle impurity concentration distribution between the substrate 11 and the epitaxial layer 22. Breakdown voltage is maintained by the gradient of impurity concentration distribution, and the thickness of the epitaxial layer 22 is sufficiently thinned. Thus resistance REpi is reduced, and a semiconductor layer 30 of comparatively low resistance is formed as a second conductivity type layer sandwiched by first conductivity type base layers. Thereby reducing ON resistance Ron, even if the gap between each of the base layers is decreased.
JP62241839A 1987-09-24 1987-09-24 Field effect semiconductor device Expired - Lifetime JPH0734470B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62241839A JPH0734470B2 (en) 1987-09-24 1987-09-24 Field effect semiconductor device
DE3851815T DE3851815T2 (en) 1987-09-24 1988-07-20 Field effect transistor and its manufacturing method.
EP88111722A EP0308612B1 (en) 1987-09-24 1988-07-20 Field effect transistor and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62241839A JPH0734470B2 (en) 1987-09-24 1987-09-24 Field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS6482565A true JPS6482565A (en) 1989-03-28
JPH0734470B2 JPH0734470B2 (en) 1995-04-12

Family

ID=17080267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62241839A Expired - Lifetime JPH0734470B2 (en) 1987-09-24 1987-09-24 Field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPH0734470B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993012545A1 (en) * 1991-12-09 1993-06-24 Nippondenso Co. Ltd. Vertical insulated gate semiconductor device and method for its manufacture
US6452219B1 (en) 1996-09-11 2002-09-17 Denso Corporation Insulated gate bipolar transistor and method of fabricating the same
JP2010521799A (en) * 2006-08-17 2010-06-24 クリー インコーポレイテッド High power insulated gate bipolar transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742164A (en) * 1980-08-27 1982-03-09 Hitachi Ltd Semiconductor device
JPS57153469A (en) * 1981-03-18 1982-09-22 Toshiba Corp Insulated gate type field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742164A (en) * 1980-08-27 1982-03-09 Hitachi Ltd Semiconductor device
JPS57153469A (en) * 1981-03-18 1982-09-22 Toshiba Corp Insulated gate type field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993012545A1 (en) * 1991-12-09 1993-06-24 Nippondenso Co. Ltd. Vertical insulated gate semiconductor device and method for its manufacture
US5545908A (en) * 1991-12-09 1996-08-13 Nippondenso Co., Ltd. Vertical type insulated-gate semiconductor device
US6452219B1 (en) 1996-09-11 2002-09-17 Denso Corporation Insulated gate bipolar transistor and method of fabricating the same
JP2010521799A (en) * 2006-08-17 2010-06-24 クリー インコーポレイテッド High power insulated gate bipolar transistor
US9548374B2 (en) 2006-08-17 2017-01-17 Cree, Inc. High power insulated gate bipolar transistors

Also Published As

Publication number Publication date
JPH0734470B2 (en) 1995-04-12

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