JPS5698879A - Preparation of constant voltage semiconductor device of low noise - Google Patents
Preparation of constant voltage semiconductor device of low noiseInfo
- Publication number
- JPS5698879A JPS5698879A JP98980A JP98980A JPS5698879A JP S5698879 A JPS5698879 A JP S5698879A JP 98980 A JP98980 A JP 98980A JP 98980 A JP98980 A JP 98980A JP S5698879 A JPS5698879 A JP S5698879A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- constant voltage
- voltage semiconductor
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To minimize the dynamic resistance and the noise at the rise time, by establishing the resistivity of the single crystal substrate for the constant voltage semiconductor device at 0.005-0.006OMEGAcm. CONSTITUTION:On the P type Si substrate 1 whose resistivity is below 0.001OMEGAcm, the N type layer 2 whose resistivity and thickness is 0.005-0.006OMEGAcm and 6-7mum respectively is epitaxially grown. On the layer 2 the SiO2 film 3 is formed by heat treatment at high temperature, and after removing some part the shallow P type region 4 is diffusion-formed in the exposed layer 2. Here the Al electrode 5 is mounted. Because the sensitivity of the layer 2 is established at 0.005-0.006OMEGAcm instead of usual 0.0035-0.0045OMEGAcm and the depth of the diffusion region 4 is made shallower, the breakdown always takes the form of the avalanche breakdown, and the dynamic resistance for the low intensity current becomes smaller, resulting in the lesser noises.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP98980A JPS5698879A (en) | 1980-01-08 | 1980-01-08 | Preparation of constant voltage semiconductor device of low noise |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP98980A JPS5698879A (en) | 1980-01-08 | 1980-01-08 | Preparation of constant voltage semiconductor device of low noise |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5698879A true JPS5698879A (en) | 1981-08-08 |
Family
ID=11488998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP98980A Pending JPS5698879A (en) | 1980-01-08 | 1980-01-08 | Preparation of constant voltage semiconductor device of low noise |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5698879A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007134384A (en) * | 2005-11-08 | 2007-05-31 | Renesas Technology Corp | Constant voltage diode |
-
1980
- 1980-01-08 JP JP98980A patent/JPS5698879A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007134384A (en) * | 2005-11-08 | 2007-05-31 | Renesas Technology Corp | Constant voltage diode |
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