JPS5724580A - Manufacture of infrared ray detecting element - Google Patents

Manufacture of infrared ray detecting element

Info

Publication number
JPS5724580A
JPS5724580A JP9917080A JP9917080A JPS5724580A JP S5724580 A JPS5724580 A JP S5724580A JP 9917080 A JP9917080 A JP 9917080A JP 9917080 A JP9917080 A JP 9917080A JP S5724580 A JPS5724580 A JP S5724580A
Authority
JP
Japan
Prior art keywords
substrate
infrared ray
detecting element
semiconductor substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9917080A
Other languages
Japanese (ja)
Other versions
JPS6310910B2 (en
Inventor
Makoto Ito
Soichi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9917080A priority Critical patent/JPS5724580A/en
Publication of JPS5724580A publication Critical patent/JPS5724580A/en
Publication of JPS6310910B2 publication Critical patent/JPS6310910B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To make it possible to easily obtain a multiplex semiconductor substrate, which is thin and uniform, by growing epitaxially a multiplex semiconductor crystal on a semiconductor substrate of high specific resistance, and then performing etching to the substrate. CONSTITUTION:On a high specific resistance semiconductor substrate 21 of cadmium.tellurium (CdTe) or the like having no impurity added, a crystal layer 22 of Hg1-xCdxTe is grown by liquid phase epitaxy. The layer 22 epitaxially grown is etched to the substrate 21 by using as a mask a photoresist film 23A formed into a predetermined pattern. Then, In is deposited by evaporation at both the ends of the layer 22 to form an infrared ray detecting element 24, an electrode region 25, and a light receiver 26.
JP9917080A 1980-07-18 1980-07-18 Manufacture of infrared ray detecting element Granted JPS5724580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9917080A JPS5724580A (en) 1980-07-18 1980-07-18 Manufacture of infrared ray detecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9917080A JPS5724580A (en) 1980-07-18 1980-07-18 Manufacture of infrared ray detecting element

Publications (2)

Publication Number Publication Date
JPS5724580A true JPS5724580A (en) 1982-02-09
JPS6310910B2 JPS6310910B2 (en) 1988-03-10

Family

ID=14240169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9917080A Granted JPS5724580A (en) 1980-07-18 1980-07-18 Manufacture of infrared ray detecting element

Country Status (1)

Country Link
JP (1) JPS5724580A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4880979A (en) * 1987-02-27 1989-11-14 Mitisubishi Denki Kabushiki Kaisha Infrared ray detector
US6766459B2 (en) 1999-12-27 2004-07-20 Seiko Epson Corporation Time keeping apparatus and method for controlling the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491196A (en) * 1977-12-28 1979-07-19 Toshiba Corp Production of photoconductive array-shaped infrared detector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491196A (en) * 1977-12-28 1979-07-19 Toshiba Corp Production of photoconductive array-shaped infrared detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4880979A (en) * 1987-02-27 1989-11-14 Mitisubishi Denki Kabushiki Kaisha Infrared ray detector
US6766459B2 (en) 1999-12-27 2004-07-20 Seiko Epson Corporation Time keeping apparatus and method for controlling the same

Also Published As

Publication number Publication date
JPS6310910B2 (en) 1988-03-10

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