JPS57122514A - Method for selective epitaxial growth - Google Patents

Method for selective epitaxial growth

Info

Publication number
JPS57122514A
JPS57122514A JP795681A JP795681A JPS57122514A JP S57122514 A JPS57122514 A JP S57122514A JP 795681 A JP795681 A JP 795681A JP 795681 A JP795681 A JP 795681A JP S57122514 A JPS57122514 A JP S57122514A
Authority
JP
Japan
Prior art keywords
epitaxial growth
regions
emitter
grid
selective epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP795681A
Other languages
Japanese (ja)
Inventor
Masami Nishiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP795681A priority Critical patent/JPS57122514A/en
Publication of JPS57122514A publication Critical patent/JPS57122514A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To increase a yield by growing epitaxial films on scribe grids or on annular regions besides the regions where epitaxial growth is to be deposited. CONSTITUTION:After an electrode contacting window for emitter electrode is formed by washed emitter process, a silicon layer on a scribe grid 10 extended on each circuit element forming region 11 on the semiconductor substrate 9 is removed by photoetching. An epitaxial film 12 is then formed on the silicon face with the grid 10 and the emitter regions 1 exposed. This permits stabilized selective epitaxial growth with good reproducibility within a micro area.
JP795681A 1981-01-23 1981-01-23 Method for selective epitaxial growth Pending JPS57122514A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP795681A JPS57122514A (en) 1981-01-23 1981-01-23 Method for selective epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP795681A JPS57122514A (en) 1981-01-23 1981-01-23 Method for selective epitaxial growth

Publications (1)

Publication Number Publication Date
JPS57122514A true JPS57122514A (en) 1982-07-30

Family

ID=11679935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP795681A Pending JPS57122514A (en) 1981-01-23 1981-01-23 Method for selective epitaxial growth

Country Status (1)

Country Link
JP (1) JPS57122514A (en)

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