JPS5474367A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5474367A
JPS5474367A JP14182177A JP14182177A JPS5474367A JP S5474367 A JPS5474367 A JP S5474367A JP 14182177 A JP14182177 A JP 14182177A JP 14182177 A JP14182177 A JP 14182177A JP S5474367 A JPS5474367 A JP S5474367A
Authority
JP
Japan
Prior art keywords
type
impurity layer
layer
oxidized film
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14182177A
Other languages
Japanese (ja)
Inventor
Osamu Hataishi
Kuniaki Makabe
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14182177A priority Critical patent/JPS5474367A/en
Publication of JPS5474367A publication Critical patent/JPS5474367A/en
Pending legal-status Critical Current

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  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To lower the specific resistance of the epitaxial-growth semiconductor layer of a semiconductor device, obtained by mounting a normal element and I2L element on one chip, only at the I2L element part definitely.
CONSTITUTION: On p-type Si semiconductor substrate 11, Si oxidized film 12 is formed and patterned through photo lithography to form burying-diffusing openings, through which Sb is vapor-phase-diffused to form n+-type buried layers 131 and 132. Next, oxidized film 12 is patterned through photo lithgraphy to form impurity- diffusing openings, through which phosphorus ions are injected to form N+-type impurity layer 14. Then, oxidized film 12 is removed and B ions, for example, are injected to from p+-type impurity layer 15. Finally, n-type Si semoconductor layer 16 is grown through normal vapor-phase epitaxial growth. At this time, since phosphorus diffused from impurity layer 14 to the outside is neutralised by impurity layer 15 of B of the opposite conduction type, the specific resistance of the part except the circumference of impurity layer 14 as the effective emitter part will not decrease down to an undesired value.
COPYRIGHT: (C)1979,JPO&Japio
JP14182177A 1977-11-26 1977-11-26 Manufacture of semiconductor device Pending JPS5474367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14182177A JPS5474367A (en) 1977-11-26 1977-11-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14182177A JPS5474367A (en) 1977-11-26 1977-11-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5474367A true JPS5474367A (en) 1979-06-14

Family

ID=15300901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14182177A Pending JPS5474367A (en) 1977-11-26 1977-11-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5474367A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59134870A (en) * 1983-01-21 1984-08-02 Hitachi Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59134870A (en) * 1983-01-21 1984-08-02 Hitachi Ltd Semiconductor device
JPH0470781B2 (en) * 1983-01-21 1992-11-11 Hitachi Ltd

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