JPS5474367A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5474367A JPS5474367A JP14182177A JP14182177A JPS5474367A JP S5474367 A JPS5474367 A JP S5474367A JP 14182177 A JP14182177 A JP 14182177A JP 14182177 A JP14182177 A JP 14182177A JP S5474367 A JPS5474367 A JP S5474367A
- Authority
- JP
- Japan
- Prior art keywords
- type
- impurity layer
- layer
- oxidized film
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To lower the specific resistance of the epitaxial-growth semiconductor layer of a semiconductor device, obtained by mounting a normal element and I2L element on one chip, only at the I2L element part definitely.
CONSTITUTION: On p-type Si semiconductor substrate 11, Si oxidized film 12 is formed and patterned through photo lithography to form burying-diffusing openings, through which Sb is vapor-phase-diffused to form n+-type buried layers 131 and 132. Next, oxidized film 12 is patterned through photo lithgraphy to form impurity- diffusing openings, through which phosphorus ions are injected to form N+-type impurity layer 14. Then, oxidized film 12 is removed and B ions, for example, are injected to from p+-type impurity layer 15. Finally, n-type Si semoconductor layer 16 is grown through normal vapor-phase epitaxial growth. At this time, since phosphorus diffused from impurity layer 14 to the outside is neutralised by impurity layer 15 of B of the opposite conduction type, the specific resistance of the part except the circumference of impurity layer 14 as the effective emitter part will not decrease down to an undesired value.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14182177A JPS5474367A (en) | 1977-11-26 | 1977-11-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14182177A JPS5474367A (en) | 1977-11-26 | 1977-11-26 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5474367A true JPS5474367A (en) | 1979-06-14 |
Family
ID=15300901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14182177A Pending JPS5474367A (en) | 1977-11-26 | 1977-11-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5474367A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59134870A (en) * | 1983-01-21 | 1984-08-02 | Hitachi Ltd | Semiconductor device |
-
1977
- 1977-11-26 JP JP14182177A patent/JPS5474367A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59134870A (en) * | 1983-01-21 | 1984-08-02 | Hitachi Ltd | Semiconductor device |
JPH0470781B2 (en) * | 1983-01-21 | 1992-11-11 | Hitachi Ltd |
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